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IXYS Corporation IXTH12N90 MOSFET N-CH 900V 12A TO247
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IXTH12N90 Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXTH12N90		IXYS	900V MegaMOS FET		Original	PDF
IXTH12N90		IXYS	MegaMOS FET		Scan	PDF
IXTH12N90		IXYS	MegaMOS Power MOSFETs		Scan	PDF
IXTH12N90		Unknown	Shortform Datasheet & Cross References Data		Short Form	PDF
IXTH12N90SN		IXYS	Transistor Mosfet N-CH 900V 12A 3TO-247 AD		Original	PDF

IXTH12N90 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
fqp60n06 Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier	Original	STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640	PDF
IRF1830G Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Inﬁneon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23	Original	AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696	PDF
IRF540 complementary Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3	Original	RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR	PDF
IXFd50n20 Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L Text: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type	Original		PDF
SSH6N80 Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50 Text: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L	Original	BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 SSH6N80 rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50	PDF
IXFH15N100 Abstract: 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80 Text: STI Type: IRFP354 Notes: Breakdown Voltage: 450 Continuous Current: 14 RDS on Ohm: 0.35 Trans Conductance Mhos: 5.9 Trans Conductance A: 8.4 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 14 TYP Resistance Switching toff: 89 TYP	Original	IRFP354 O-247 IRFP360LC 2N3049DIE 2C3049 O-204AA/TO-3 IXTM20N55A IXFH15N100 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80	PDF
fqp60n06 Abstract: SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30 Text: 电子元器件系列 wwww.rf-china.com RF-Micom co.,Ltd EMail:sales@rf-china.com Sale Phone:86-592-5713956 MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL	Original	STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30	PDF
IRFP260 equivalent Abstract: IXTD1N80-1T irfp450 equivalent Irfp250 irfp460 IRFP460 equivalent IXTD50N20-7X IXTD05N100-1T IXTD67N10-7X x315 IRFP254 equivalent Text: Standard Power MOSFET and MegaMOSTMFET Chips N-Channel Enhancement-Mode Type VDSS max. TJM = 150°C RDS on @ ID max. Ciss typ. trr typ. V Ω IXTD67N10-7X IXTD75N10-7X 100 0.025 0.02 5 5 3700 3700 300 300 IXTD42N20-7X IXTD50N20-7X IFRC250-5X IFRC260-6X 200	Original	IXTD67N10-7X IXTD75N10-7X IXTD42N20-7X IXTD50N20-7X IFRC250-5X IFRC260-6X IFRC254-5X IFRC264-6X IXTD40N30-7X IRFC450-5X IRFP260 equivalent IXTD1N80-1T irfp450 equivalent Irfp250 irfp460 IRFP460 equivalent IXTD05N100-1T x315 IRFP254 equivalent	PDF
IXTH40N25 Abstract: irfp450 equivalent IXTH7P50 IXTH12N90 IXTD50N20-7X IXTD11N80 IRFP460 equivalent Text: Standard Power MOSFET and MegaMOS FET Chips N-Channel Enhancement-Mode Type V BSS m ax. e m ax. typ- typ. Chip type C hips» se «18 Source Ct bond w ire T j.s lS O 'C V - datasheet Q ns mm Dim. out line No. mfts IXTD67N10-7X IXTD75N10-7X 100 0.025	OCR Scan	IXTD67N10-7X IXTD75N10-7X IXTD42N20-7X IXTD50N20-7X IXTD40N25-6X IXTD40N30-7X IRFC450-5X IRFC460-6X IXTD21N50-7X IXTD24N50-7X IXTH40N25 irfp450 equivalent IXTH7P50 IXTH12N90 IXTD11N80 IRFP460 equivalent	PDF
Irfp250 irfp460 Abstract: IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20 Text: OD Discrete Power MOSFETs G U Standard N-channel types V DSS min. V p W o n t DS on) TO-247 C“ "^C = 25°C 25°C A a As TO-204 (M) 150 (K) (R) TO-268 SOT-227B (N) ^ -W 60 0.024 IXTH60N10 67 0.025 IXTH67N10 75 75 0.020 0.020 IXTH75N10 48 TO-220 TO-252 (Y)	OCR Scan	O-204 O-264 ISOPLUS247 O-220 O-252 O-247 O-268 ISOPLUS220 O-263 OT-227B Irfp250 irfp460 IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20	PDF
1XTH5N100 Abstract: xth6n90 IRFP460 equivalent IXTH7P50 ixth10p50 Text: lOIXYS_ Standard Power MOSFET and MegaMOS FET Chips N-Channel Enhancement-Mode Type Vwa ÖWL T r ia r e V V 1 M * A iijfit CMpsiza dimensions S o w n OP bvftdw trft iw a in w id Equivalent «M ae Own. out line No mm mils IXTD67N10 IXTD75N10	OCR Scan	IXTD67N10 IXTD75N10 IRFC250 IXTD42N20 IXTD50N20 IXTD68N20 IRFC254 IXTD40N25 IXTD35M30 IXTD40N30 1XTH5N100 xth6n90 IRFP460 equivalent IXTH7P50 ixth10p50	PDF
megamos Abstract: f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95 Text: I X Y S CORP The MegaMOS family of large scale monolithic Power MOSFETs provides significantly higher power handling capability than industry standard MOSFETs. With HDMOS technology, IXYS has increased its chip sizes without a major cost penalty to the user. Unlike the popular size 3 ,4	OCR Scan	O-204 O-247 megamos f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95	PDF
10N90 Abstract: U3350 12N90 D-68623 IXTH10N90 IXTH12N90 IXTM10N90 Text: v DSS MegaMOS FET IXTH/IXTM 10 N90 900 V IXTH/IXTM 12 N90 900 V p ^D25 DS on 10 A 1.10 Q 12 A 0.90 Q N-Channel Enhancement Mode Symbol Test Conditions V DSS T j = 25 °C to 150°C 900 V v DCR Tj = 25°C to 150°C; RGS = 1 Mi2 900 V V GS Continuous ±20	OCR Scan	O-247 10N90 12N90 O-204 O-247 00D37Ã U3350 D-68623 IXTH10N90 IXTH12N90 IXTM10N90	PDF