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    IXTH24N50 Search Results

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    IXTH24N50 Price and Stock

    Littelfuse Inc IXTH24N50L

    MOSFET N-CH 500V 24A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXTH24N50L Tube 68 1
    • 1 $33.78
    • 10 $33.78
    • 100 $25.025
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    Newark IXTH24N50L Bulk 300
    • 1 -
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    • 1000 $26.23
    • 10000 $26.23
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    IXYS Corporation IXTH24N50

    MOSFET N-CH 500V 24A TO247
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    DigiKey IXTH24N50 Tube
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    Newark IXTH24N50 Bulk 1
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    Quest Components IXTH24N50 152
    • 1 $12.9375
    • 10 $12.9375
    • 100 $7.9781
    • 1000 $7.1156
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    IXTH24N50 52
    • 1 $12.9375
    • 10 $6.4688
    • 100 $5.6063
    • 1000 $5.6063
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    IXYS Corporation IXTH24N50L

    MOSFETs 24 Amps 500V 0.30 Ohms Rds
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    Mouser Electronics IXTH24N50L 846
    • 1 $35.98
    • 10 $29.84
    • 100 $28.65
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    TTI IXTH24N50L Tube 300
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    TME IXTH24N50L 1
    • 1 $23.59
    • 10 $18.71
    • 100 $16.84
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    IXTH24N50 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    IXTH24N50 IXYS 500V HiPerFET power MOSFET Original PDF
    IXTH24N50 IXYS MegaMOS Power MOSFETs Scan PDF
    IXTH24N50 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    IXTH24N50L IXYS FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 24A TO-247 Original PDF
    IXTH24N50Q IXYS Discrete MOSFETs: Standard N-channel Types Original PDF

    IXTH24N50 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ixth24n50l

    Abstract: 24N50L
    Text: Preliminary Technical Information Linear Power MOSFET IXTH24N50L With Extended FBSOA VDSS ID25 N-Channel Enhancement Mode RDS on Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±30 V VGSM


    Original     		IXTH24N50L O-247 24N50L 04-05-07-B ixth24n50l 24N50L PDF

    Untitled

    Abstract: No abstract text available
    Text: IXTH24N50 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V)20 I(D) Max. (A)24 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)300 Minimum Operating Temp (øC)


    Original     		IXTH24N50 PDF

    IXTH24N50L

    Abstract: DS99125B 24n50l
    Text: LinearTM Power MOSFET w/ Extended FBSOA IXTH24N50L VDSS ID25 RDS on = = ≤ 500V 24A Ω 300mΩ N-Channel Enhancement Mode Avalanche Rated TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 500


    Original     		IXTH24N50L O-247 24N50L 01-10-11-C IXTH24N50L DS99125B PDF

    IXTH24N50L

    Abstract: No abstract text available
    Text: LinearTM Power MOSFET w/ Extended FBSOA VDSS ID25 IXTH24N50L RDS on = = ≤ 500V 24A Ω 300mΩ N-Channel Enhancement Mode Avalanche Rated TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 500


    Original     		IXTH24N50L O-247 062in. 24N50L 01-10-11-C IXTH24N50L PDF

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


    Original     		PDF

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 PDF

    IRF9310

    Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional


    Original     		device2176 r14153 CR108/D IRF9310 mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution PDF

    mosfet 24n50

    Abstract: No abstract text available
    Text: SFF24N50/3 SFF24N50/3T Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 24 AMP / 500 Volts 0.2 Ω N-Channel Power MOSFET DESIGNER’S DATA SHEET Features:


    Original     		SFF24N50/3 SFF24N50/3T IXTH24N50 F00175E mosfet 24n50 PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: SFF24N50M SFF24N50Z Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET 24 AMP / 500 Volts 0.23 Ω N-Channel MOSFET Part Number / Ordering Information 1/


    Original     		SFF24N50M SFF24N50Z SFF24N50 SFF24N50M; SFF24N50MDB; SFF24N50MUB; SFF24N50Z; SFF24N50ZDB; SFF24N50ZUB; O-254 PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 PDF

    IXTH24N50

    Abstract: SFF24N50M SFF24N50Z
    Text: SFF24N50M SFF24N50Z Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com DESIGNER’S DATA SHEET 24 AMP / 500 Volts 0.2 Ω N-Channel MOSFET Part Number / Ordering Information 1/


    Original     		SFF24N50M SFF24N50Z SFF24N50 O-254 O-254Z F00165F IXTH24N50 SFF24N50M SFF24N50Z PDF

    IRF540 complementary

    Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
    Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3


    Original     		RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR PDF

    mosfet 24n50

    Abstract: mosfet 24n50 transistor equivalent IXTH24N50 SSDI SFF
    Text: SFF24N50/3 SFF24N50/3T Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com 24 AMP / 500 Volts 0.2 Ω N-Channel Power MOSFET DESIGNER’S DATA SHEET Features:


    Original     		SFF24N50/3 SFF24N50/3T IXTH24N50 Rating125 F00175E mosfet 24n50 mosfet 24n50 transistor equivalent SSDI SFF PDF

    IXFd50n20

    Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L
    Text: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type


    Original     		PDF

    SSH6N80

    Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
    Text: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L


    Original     		BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 SSH6N80 rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50 PDF

    IXTH24N45

    Abstract: No abstract text available
    Text: I X Y S IDE CORP 0D003S5 » I □ IX Y S IXTH24N50, 45 IXTM24N50, 45 Sym. IXTH24N45 IXTM24N45 IXTH24N50 IXTM24N50 Unit Drain-Source Voltage 1 Vd s s 450 500 Vdc Drain-Gate Voltage (Rq s = 1.0MÎÎ) (1) Vdg r 450 500 Vdc Gate-Source Voltage Continuous Gate-Source Voltage Transient


    OCR Scan     		0D003S5 IXTH24N45 IXTM24N45 IXTH24N50 IXTM24N50 O-204 O-247 IXTH24N50, IXTM24N50, PDF

    IXTH24N50

    Abstract: SFF24N50N SFF24N50P
    Text: §S II PRELIMINARY SFF24N50N SFF24N50P SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 24 AMP zÍL 500 VOLTS 0.23 £2 N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: Rugged construction with polysilicon gate


    OCR Scan     		670-SSDI SFF24N50N SFF24N50P IXTH24N50 O-258 O-259 SFF24N50P PDF

    IXTH40N25

    Abstract: irfp450 equivalent IXTH7P50 IXTH12N90 IXTD50N20-7X IXTD11N80 IRFP460 equivalent
    Text: Standard Power MOSFET and MegaMOS FET Chips N-Channel Enhancement-Mode Type V *BSS m ax. e * m ax. typ- typ. Chip type C hips» se «18 Source Ct bond w ire T j.s lS O 'C V - datasheet Q ns mm Dim. out­ line No. mfts IXTD67N10-7X IXTD75N10-7X 100 0.025


    OCR Scan     		IXTD67N10-7X IXTD75N10-7X IXTD42N20-7X IXTD50N20-7X IXTD40N25-6X IXTD40N30-7X IRFC450-5X IRFC460-6X IXTD21N50-7X IXTD24N50-7X IXTH40N25 irfp450 equivalent IXTH7P50 IXTH12N90 IXTD11N80 IRFP460 equivalent PDF

    Irfp250 irfp460

    Abstract: IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20
    Text: OD Discrete Power MOSFETs G U Standard N-channel types V DSS min. V p W o n t DS on) TO-247 C“ "^C = 25°C 25°C A a As TO-204 (M) 150 (K) (R) TO-268 SOT-227B (N) ^ -W 60 0.024 IXTH60N10 67 0.025 IXTH67N10 75 75 0.020 0.020 IXTH75N10 48 TO-220 TO-252 (Y)


    OCR Scan     		O-204 O-264 ISOPLUS247 O-220 O-252 O-247 O-268 ISOPLUS220 O-263 OT-227B Irfp250 irfp460 IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20 PDF

    1XTH5N100

    Abstract: xth6n90 IRFP460 equivalent IXTH7P50 ixth10p50
    Text: lOIXYS_ Standard Power MOSFET and MegaMOS FET Chips N-Channel Enhancement-Mode Type Vwa ÖWL T r ia r e V V 1 M * A iijfit CMpsiza dimensions S o w n OP bvftdw trft iw a in w id Equivalent «M ae Own. out­ line No mm mils IXTD67N10 IXTD75N10


    OCR Scan     		IXTD67N10 IXTD75N10 IRFC250 IXTD42N20 IXTD50N20 IXTD68N20 IRFC254 IXTD40N25 IXTD35M30 IXTD40N30 1XTH5N100 xth6n90 IRFP460 equivalent IXTH7P50 ixth10p50 PDF

    megamos

    Abstract: f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95
    Text: I X Y S CORP The MegaMOS family of large scale monolithic Power MOSFETs provides significantly higher power handling capability than industry standard MOSFETs. With HDMOS technology, IXYS has increased its chip sizes without a major cost penalty to the user. Unlike the popular size 3 ,4


    OCR Scan     		O-204 O-247 megamos f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95 PDF

    IXTH24N50

    Abstract: SFF24N50B
    Text: PRELIMINARY SFF24N50B SOLID STATE DEVICES, INC 11 • 11 24 AMP 500 VOLTS 0.23 a N-CHANNEL POWER MOSFET Designer’s Data Sheet FEATURES: Rugged construction with poiysiiicon gate Low RDS on and high transconductance Excellent high temperature stability Very fast switching speed


    OCR Scan     		670-SSDI IXTH24N50 SFF24N50B SFF24N50B PDF

    IXTH24N50

    Abstract: No abstract text available
    Text: PRELIMINARY SFF24N50/3 SFF24N50/3T SOLID STATE DEVICES, INC 14849 Firestone Boulevard • La Mirada,CA 90638 Phone: 714 670-SSDI (7734) • Fax: (714) 522-7424 24 AMP 500 VOLTS 0.25 a N-CHANNEL POWER MOSFET D esigner’s Data Sheet FEATURES: Rugged construction with polysilicon gate


    OCR Scan     		SFF24N50/3 SFF24N50/3T 670-SSDI IXTH24N50 PDF