IXTN15N100 Search Results

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IXYS Corporation IXTN15N100 MOSFET N-CH SOT227
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTN15N100	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	IXTN15N100		425		1	1 - 10 - 100 $66.31 1000 $61.88 10000 $61.88	Buy Now

IXTN15N100 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
IXTN15N100		IXYS	N-Channel Enhancement-Mode MegaMOS FET		Scan	PDF
IXTN15N100		Unknown	Shortform Datasheet & Cross References Data		Short Form	PDF

IXTN15N100 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
irfb4115 Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	PDF	element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
BERULUB FR 16 B Abstract: circuit diagram of 5kw smps full bridge thyristor aeg UC3854 5kw harmer simmons BERULUB FR 16 Grease Berulub FR 16 Berulub FR 66 5kw smps pfc ups PURE SINE WAVE schematic diagram Text: Reliability Reliability General Power semiconductors used in high power electronic equipment are exposed to different conditions compared to plastic encapsulated components applied in equipment used for communication electronics. Controlling and converting of high power	Original	PDF	IXBH40N160, BERULUB FR 16 B circuit diagram of 5kw smps full bridge thyristor aeg UC3854 5kw harmer simmons BERULUB FR 16 Grease Berulub FR 16 Berulub FR 66 5kw smps pfc ups PURE SINE WAVE schematic diagram
1SN10 Abstract: No abstract text available Text: IXYS IXTN15N100 VD S S MegaMOS FET = 1000 V = 15 A D 25 R D S on N-Channel Enhancement Mode = 0.6 Q OD G I s Sym bol Test Conditions ''- P ' ¿s Maximum Ratings V DSS T j = 2 5°C to 150°C 1000 V v OGR T j = 2 5°C to 150°C; R GS = 10 k£l 1000 V V Gs	OCR Scan	PDF	IXTN15N100 OT-227 E1S3432 C2-98 15N100 C2-99 1SN10
ixtn15n100 Abstract: No abstract text available Text: MegaMOS FET IXTN15N100 v ¥ dss ^D25 P DS on = 1000 V = 15 A = 0.6 Q N-Channel Enhancement Mode 6s Symbol Maximum Ratings Test Conditions V DSS Tj = 25°C to 150°C 1000 V vDGH Tj = 25°C to 150°C; RGS = 10 kD 1000 V vas Continuous ±20 V V GSM Transient	OCR Scan	PDF	IXTN15N100 OT-227 000E21D ixtn15n100
IXTN15N100 Abstract: f g megamos 15N100 Text: MegaMOS FET IXTN15N100 V DSS ^D25 P DS on = 1000 V = 15 A = 0 .6 Q N-Channel Enhancement Mode ?D G r Ks OS Maximum Ratings Symbol Test Conditions V OSB Tj = 25°C to 150°C 1000 V v DGR Tj = 25°C to 150°C; RGS = 10 kQ 1000 V v GS Continuous +20 V V GSM	OCR Scan	PDF	IXTN15N100 OT-227 4bflb22b Q00221D f g megamos 15N100
15N100 Abstract: No abstract text available Text: PIXYS : MegaMOS FET IXTN 15N100 V DSS ID25 1000 V 15 A D 0.6 Q DS on N-Channel Enhancement Mode Symbol Test Conditions v Tj =25°Cto150°C 1000 V v DGB T, =25°C to 150° C; RGS= 10k£2 1000 V VGS VGSM Continuous ¿20 V Transient d30 V Us Tc =25°C 15 A	OCR Scan	PDF	15N100 OT-227 Cto150 C2-90 C2-91 15N100