KGF1606 Search Results

KGF1606 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
KGF1606		OKI Semiconductor	GaAs Ceramic Power FET for ISM, PHS and PCS Apps		Scan	PDF

KGF1606 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
tag 9205 Abstract: 800MHz CDMA Handset Circuit Diagram Wireless landline handset circuit diagram qualcomm 7200 msm7* qualcomm TAG 9202 800MHz CDMA Handset complete Circuit Diagram Umbilical cord MCI 9201 ERICSSON BML Text: WHITE PAPER O K I T E L E C O M P R O D U C T S Technology Directions for Personal Communications Systems October 1995 ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– • Introduction ■	Original	PDF	1-800-OKI-6388 tag 9205 800MHz CDMA Handset Circuit Diagram Wireless landline handset circuit diagram qualcomm 7200 msm7* qualcomm TAG 9202 800MHz CDMA Handset complete Circuit Diagram Umbilical cord MCI 9201 ERICSSON BML
38mm2 Abstract: FET 8PIN NF 935 fet dual gate sot143 P01 SOT-89 GaAs FET sot89 KGF1145 KGF2701 KGF1156 KGF1165 Text: OKI Semiconductor RF Devices GaAs MMICs 850MHz 1.9GHz 2.4GHz VDD Typ IDD (Typ) Gain (Min) Power Out (Min) NF/Iso (Max) Labeled Freq. 3V 5V 3V 5V 3V 5V Cascaded FET, 2-stage limiting amp. 5.0V 2.7mA 22dB 2dBm 40dB Iso. 850MHz x √√√ x √ x x High isolation; DC.	Original	PDF	850MHz OT-143 KGF1155B KGF1156 MBF9301 849MHz 38mm2 FET 8PIN NF 935 fet dual gate sot143 P01 SOT-89 GaAs FET sot89 KGF1145 KGF2701 KGF1156 KGF1165
CD 7805 Abstract: PH 4149 Text: O K I Semiconductor KGF1606_ GaAs Ceramic Power FET for ISM, PHS and PCS Applications DESCRIPTION The KGF1606 is a high-power, high-efficiency G aA s pow er FET that features high gain at high currents to frequencies of over 2.4 GH z, with the ultra-low-impedance drive required for ISM, PH S and PCS appli	OCR Scan	PDF	KGF1606_ KGF1606 b72424D 0D2Efl74 KGF1606 2424D D022A7S CD 7805 PH 4149
4562 fet Abstract: ic 17806 KGF1606 marking 4489 f1606 Text: O K I Semiconductor KGF1606_ G aAs Ceramic Power FET for ISM, PHS and PCS Applications DESCRIPTION The KGF1606 is a high-power, high-efficiency GaAs power FET that features high gain at high currents to frequencies of over 2.4 GHz, with the ultra-low-impedance drive required for ISM, PHS and PCS appli	OCR Scan	PDF	KGF1606 KGF1606 b72424D b724Z40 Q0Z2fl75 4562 fet ic 17806 marking 4489 f1606
gaas fet marking AR Abstract: 15862 Text: O K I Semiœnductor KGF1606_ GaAs Ceramic Power FET for ISM, PHS and PCS Applications DESCRIPTION The KGF1606 is a high-power, high-efficiency GaAs pow er FET that features high gain at high currents to frequencies of over 2.4 GHz, w ith the ultra-low-impedance drive required for ISM, PH S and PCS appli	OCR Scan	PDF	KGF1606_ KGF1606 KGF1606 gaas fet marking AR 15862