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    KGF1606 Search Results

    KGF1606 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KGF1606 OKI Semiconductor GaAs Ceramic Power FET for ISM, PHS and PCS Apps Scan PDF

    KGF1606 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    tag 9205

    Abstract: 800MHz CDMA Handset Circuit Diagram Wireless landline handset circuit diagram qualcomm 7200 msm7* qualcomm TAG 9202 800MHz CDMA Handset complete Circuit Diagram Umbilical cord MCI 9201 ERICSSON BML
    Text: WHITE PAPER O K I T E L E C O M P R O D U C T S Technology Directions for Personal Communications Systems October 1995 ––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– • Introduction ■


    Original
    1-800-OKI-6388 tag 9205 800MHz CDMA Handset Circuit Diagram Wireless landline handset circuit diagram qualcomm 7200 msm7* qualcomm TAG 9202 800MHz CDMA Handset complete Circuit Diagram Umbilical cord MCI 9201 ERICSSON BML PDF

    38mm2

    Abstract: FET 8PIN NF 935 fet dual gate sot143 P01 SOT-89 GaAs FET sot89 KGF1145 KGF2701 KGF1156 KGF1165
    Text: OKI Semiconductor RF Devices GaAs MMICs 850MHz 1.9GHz 2.4GHz VDD Typ IDD (Typ) Gain (Min) Power Out (Min) NF/Iso (Max) Labeled Freq. 3V 5V 3V 5V 3V 5V Cascaded FET, 2-stage limiting amp. 5.0V 2.7mA 22dB 2dBm 40dB Iso. 850MHz x √√√ x √ x x High isolation; DC.


    Original
    850MHz OT-143 KGF1155B KGF1156 MBF9301 849MHz 38mm2 FET 8PIN NF 935 fet dual gate sot143 P01 SOT-89 GaAs FET sot89 KGF1145 KGF2701 KGF1156 KGF1165 PDF

    CD 7805

    Abstract: PH 4149
    Text: O K I Semiconductor KGF1606_ GaAs Ceramic Power FET for ISM, PHS and PCS Applications DESCRIPTION The KGF1606 is a high-power, high-efficiency G aA s pow er FET that features high gain at high currents to frequencies of over 2.4 GH z, with the ultra-low-impedance drive required for ISM, PH S and PCS appli­


    OCR Scan
    KGF1606_ KGF1606 b72424D 0D2Efl74 KGF1606 2424D D022A7S CD 7805 PH 4149 PDF

    4562 fet

    Abstract: ic 17806 KGF1606 marking 4489 f1606
    Text: O K I Semiconductor KGF1606_ G aAs Ceramic Power FET for ISM, PHS and PCS Applications DESCRIPTION The KGF1606 is a high-power, high-efficiency GaAs power FET that features high gain at high currents to frequencies of over 2.4 GHz, with the ultra-low-impedance drive required for ISM, PHS and PCS appli­


    OCR Scan
    KGF1606 KGF1606 b72424D b724Z40 Q0Z2fl75 4562 fet ic 17806 marking 4489 f1606 PDF

    gaas fet marking AR

    Abstract: 15862
    Text: O K I Semiœnductor KGF1606_ GaAs Ceramic Power FET for ISM, PHS and PCS Applications DESCRIPTION The KGF1606 is a high-power, high-efficiency GaAs pow er FET that features high gain at high currents to frequencies of over 2.4 GHz, w ith the ultra-low-impedance drive required for ISM, PH S and PCS appli­


    OCR Scan
    KGF1606_ KGF1606 KGF1606 gaas fet marking AR 15862 PDF