Untitled
Abstract: No abstract text available
Text: KM44C16100AK CMOS D R A M ELECTR O NICS 1 6 Mx 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6, or -7 , package type(SOJ or
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KM44C16100AK
16Mx4
16Mx4,
512Kx8)
7RL4142
DG3431Ã
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KM44C16100A
Abstract: No abstract text available
Text: KM44C16000A, KM44C16100A CMOS DRAM 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cycle 4K Ref. or 8K Ref. , access time(-5, -6,
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KM44C16000A,
KM44C16100A
16Mx4
QG533b5
KM44C16100A
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KM44C16100A
Abstract: km44c16000
Text: MEMORY ICs D e n s ity 64M bit O r* D *IUAA. rVwVr 16Mx4 5V±10% 3.3V+0.3V FUNCTION GUIDE Baokaou. P u rrN o m ta r. KM44C16000A# Fast Page 8K K : 32 Pin SOJ [400mil] KM44C16100A# Fast Page(4K) S : 32 pin TSOP ll(Forward) KM44C16004A# EDO(8K) KM44C16104A#
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KM44C16000A#
KM44C16100A#
KM44C16004A#
KM44C16104A#
400mil]
16Mx4
KM44V16000A#
KM44V16000A
KM44V16100A#
KM44C16100A
km44c16000
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KM44C16100A
Abstract: No abstract text available
Text: KM44C16000A, KM44C16100A CMOS DRAM 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION T h is is a fa m ily o f 1 6 ,7 7 7 ,2 1 6 x 4 b it F a s t P a g e M o d e C M O S D R A M s. F a s t P a g e M o d e o ffe rs h ig h s p e e d ra n d o m a c c e s s o f m e m o ry c e lls w ith in th e s a m e ro w . R e fre s h c y c le 4 K R ef. o r 8K R ef. , a c c e s s tim e (-5 , -6,
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KM44C16000A,
KM44C16100A
KM44C16100A
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KM44C16100AS
Abstract: No abstract text available
Text: KMM372C1600AK/AS KMM372C1680AK/AS DRAM MODULE KMM372C1600AK/AS & KMM372C1680AK/AS Fast Page Mode 16Mx72 DRAM DIMM with ECC based on 16Mx4, 4K & 8K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM372C 160 8 0A is a 16M bit x 72 Dynamic RAM high density memory module. The
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KMM372C1600AK/AS
KMM372C1680AK/AS
KMM372C1680AK/AS
16Mx72
16Mx4,
KMM372C
KMM372C160
16Mx4bit
400mil
KM44C16100AS
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KM44C16100AS
Abstract: No abstract text available
Text: K M 4 4 C 161 OOAS CMOS DRAM ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Access time -5, -6, or -7 , package type(SOJ or
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16Mx4
KM44C16100AS
7Rb4142
KM44C16100AS
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372c
Abstract: No abstract text available
Text: KMM372C1600AK/AS KMM372C1680AK/AS DRAM MODULE KMM372C1600AK/AS & KMM372C1680AK/AS Fast Page Mode 16Mx72 DRAM DIMM with ECC based on 16Mx4, 4K & 8K Refresh, 5V G EN ERA L D ESC RIPTIO N FEATURES The Samsung KMM372C160 8 0A is a 16M bit X 72 • Part Identification
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KMM372C1600AK/AS
KMM372C1680AK/AS
KMM372C1600AK/AS
KMM372C1680AK/AS
16Mx72
16Mx4,
KMM372C160
48pin
168-pin
372c
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1004CL
Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
Text: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-' -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7
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KMM5321200BW/BWG-6
5321200BW/BWG-'
KMM5361203BW/8
KMM5322200BW/BWG-6
KMM5322100BKU/BKUG-5
MM5361203BW/BWG-7
KMM5322200BW/BWG-7
2MX32
KMM5322100BK
2Mx36
1004CL
44V16
366F
44C40
372V3280
2100B-7
M5368
KMM5368103B
44v16100
dram module kmm 2mx32
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1004CL
Abstract: KM48V2104B KM44V16104AK KM416V256BL 4M DRAM EDO KM48V2100B 44v16104 1mx1 DRAM DIP
Text: CMOS DRAM General Information 2. Product Guide D e iifty m » iJ P P N M I>1SS:<?p7ÍRRk3^ 1M bit 1Mx1 5V±10% KM41C1000D# 256Kx4 5V±10% KM44C256D# 128Kx8 5V±10% KM48C128# 60/70/80 Fast Page P:18 Pin DIP 1Mx1 60/70/80 Fast Page J:20 Pin SOJ 55/60/70 Fast Page
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KM41C1000D#
KM41C1000D-L#
256Kx4)
256Kx4
KM44C256D#
KM44C256D-L#
128Kx8
KM48C128#
KM48C128
KM48C124#
1004CL
KM48V2104B
KM44V16104AK
KM416V256BL
4M DRAM EDO
KM48V2100B
44v16104
1mx1 DRAM DIP
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M53216
Abstract: No abstract text available
Text: DRAM MODULE KMM53216000A KG K M M 53216000A K G Fast Page M ode 16Mx32 DRAM SIM M , 4K Refresh using 64M DRAM with 400mil G EN ERA L D ESCRIPTIO N FEATURES The Samsung KM M 53216000AKG is a 16M bit x 32 • Part Identification Dynam ic RAM high density m em ory module. The
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KMM53216000A
3216000A
16Mx32
400mil
53216000AKG
32-pin
72-pin
cycles/64m
M53216
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KM41C16000BK
Abstract: KMM53632000AK
Text: DRAM MODULE KMM53632000AK/AKG KMM53632000AK/AKG Fast Page Mode 32M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53632000A is a 32Mx36bits Dynamic Part Identification RAM high density memory module. The Samsung
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KMM53632000AK/AKG
KMM53632000AK/AKG
16Mx4
16Mx1,
KMM53632000A
32Mx36bits
16Mx4bits
16Mx1bit
72-pin
KM41C16000BK
KMM53632000AK
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km44c2560
Abstract: KM48V2104B-6 KM44C16004A-5
Text: MEMORY ICs FUNCTION GUIDE DRAM For reference 1M bit 258KX4 KM41C1000D-6 —i KM41C1000D-7 KM41C1000D-L6 —i KM41C1000D-L7 KM44C2560-6 —j KM44C256D-7 KM44C256D-L6 1M B/W r , 128KX8 • KM48C128-55 —\ KM48C128-6 — KM41C1000D-L6 - KM44C256D-8 i KM44C256D-L8
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KM41C1000D-6
KM41C1000D-L6
KM41C1000D-7
KM41C1000D-L7
KM44C256D-7
KM44C256D-L7
KM41C1000D-8
258KX4
KM44C2560-6
km44c2560
KM48V2104B-6
KM44C16004A-5
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HA5273
Abstract: km44c16000
Text: KMM364C1600AK/AS KMM364C1680AK/AS DRAM MODULE KMM364C1600AK/AS & KMM364C1680AK/AS Fast Page Mode 16Mx64 DRAM DIMM based on 16Mx4, 4K & 8K Refresh, 5V G EN ERA L D ESCRIPTIO N FEATURES The Samsung KMM364C160 8 0A is a 16M bit x 64 Dynamic RAM high density m em ory module. The
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KMM364C1600AK/AS
KMM364C1680AK/AS
KMM364C1600AK/AS
KMM364C1680AK/AS
16Mx64
16Mx4,
KMM364C160
16Mx4bit
400mil
HA5273
km44c16000
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