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    LH532600 Search Results

    LH532600 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LH532600 Sharp CMOS 2M (256K x 8-128K x 16) MROM Original PDF
    LH532600D Sharp CMOS 2M(256K x 8/128K x 16) Mask-Programmable ROM Original PDF
    LH532600D Sharp CMOS 2M (256K x 8 / 128K x 16) Mask-Programmable ROM Scan PDF
    LH532600N Sharp CMOS 2M(256K x 8/128K x 16) Mask-Programmable ROM Original PDF
    LH532600N Sharp CMOS 2M (256K x 8 / 128K x 16) Mask-Programmable ROM Scan PDF
    LH532600T Sharp CMOS 2M(256K x 8/128K x 16) Mask-Programmable ROM Original PDF
    LH532600T Sharp CMOS 2M (256K x 8 / 128K x 16) Mask-Programmable ROM Scan PDF
    LH532600TR Sharp CMOS 2M(256K x 8/128K x 16) Mask-Programmable ROM Original PDF
    LH532600TR Sharp CMOS 2M (256K x 8 / 128K x 16) Mask-Programmable ROM Scan PDF

    LH532600 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    532600-6

    Abstract: LH532600
    Text: LH532600 CMOS 2M 256K x 8/128K × 16 MROM FEATURES PIN CONNECTIONS • 262,144 words × 8 bit organization (Byte mode) 131,072 words × 16 bit organization (Word mode) • Access time: 100 ns (MAX.) • Static operation • TTL compatible I/O • Three-state outputs


    Original
    PDF LH532600 8/128K 40-PIN D15/A-1 48TSOP 48-pin, 40-pin, 600-mil 532600-6 LH532600

    LH532600

    Abstract: LH532
    Text: LH532600 FEATURES • 262,144 words x 8 bit organization Byte mode 131,072 words × 16 bit organization (Word mode) CMOS 2M (256K × 8/128K × 16) Mask-Programmable ROM PIN CONNECTIONS 40-PIN DIP 40-PIN SOP TOP VIEW OE1/OE1/DC 1 40 A8 A7 2 39 A9 A6 3 38


    Original
    PDF LH532600 8/128K 40-PIN D15/A-1 48TSOP 48-pin, 40-pin, 600-mil LH532600 LH532

    532600-6

    Abstract: A10C LH532600
    Text: LH532600 CMOS 2M 256K x 8/12 8 K x 16 M a sk-P ro g ram m a ble ROM FEATURES PIN CONNECTIONS • 262,144 words x 8 bit organization (Byte mode) 131,072 words x 16 bit organization (Word mode) 4 0 -P IN D IP 4 0 -P IN S O P T O P V IE W N H I a 8 2 39 □


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    PDF LH532600 40-pin, 600-miI 525-miI 48-pin, LH532600 8/128K 48TSOP 532600-6 A10C

    1235Z

    Abstract: No abstract text available
    Text: LH532600 CMOS 2M 256K x 8/128K x 16 MROM FEATURES PIN CONNECTIONS • 262,144 words x 8 bit organization (Byte mode) 131,072 words x 16 bit organization (Word mode) • Access time: 100 ns (MAX.) 40-P IN DIP 40-P IN SO P TO P V IE W s 40 D A 8 C 2 39 Z l Ag


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    PDF LH532600 40-pin, 600-mil 525-mil 48-pin, LH532600 8/128K 1235Z

    Untitled

    Abstract: No abstract text available
    Text: LH532600 FEATURES • 262,144 words x 8 bit organization Byte mode 131,072 words x 16 bit organization (Word mode) • Access time: 100 ns (MAX.) • Static operation • TTL compatible I/O • Three-state outputs • Single +5 V power supply • Power consumption:


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    PDF LH532600 40-pin, 600-mil 525-mil 48-pin, 8/128K 40-PIN

    Untitled

    Abstract: No abstract text available
    Text: LH532600 CMOS 2M 256K x 8/128K x 16 MROM FEATURES PIN CONNECTIONS • 262,144 words x 8 bit organization (Byte mode) 131,072 words x 16 bit organization (Word mode) • Access time: 100 ns (MAX.) 4 0 -P IN D IP 4 0 -P IN S O P T O P a 7 I= 2 a 6 Z 3 38 Zl A g


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    PDF LH532600 40-pin, 600-mil 525-mil 48-pin, 8/128K 48TSOP

    536G

    Abstract: LH534600
    Text: MEMORIES • Mask ROMs Process Capacity * Configuration words X bits Pinout Access time Model No. (ns) MIN. Supply current (mA) MAX. Supply voltage (V) (ns) MAX. User's No. Cycle tima Package 256k 32k X 8 J LH53259D/N/T L H 5359X X 150 25 5 ± 10% 28DIP/28SOP/28TSOP(I)


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    PDF LH53259D/N/T LH53517D/N/T/TR LH531VOOD/N/TAJ LH53V1ROON/T LH530800AD/AN/AU LHS30800AD/AN-Y LH531OOOBD/BN LH531000BN-S LH531024D/N/U LH532100BD 536G LH534600

    lh57257

    Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02
    Text: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429


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    PDF IR2E201 IR2E24 IR2E27/A IR2E28 IR2E29 IR2E30 IR2E31/A IR2E32N9 IR2E34 IR2E41 lh57257 IR2E31 IR2E01 IR2C07 IR2E27 IR2E19 IR2E31A IR3n06 IR2E02

    LH231G

    Abstract: lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235
    Text: MEMORIES ★Under development • M ask ROMs SlpÉHRfi Bonflgmllan jvorai x d m i NMOS <"^g|g|ï|ïi£- User1* No. sssysr Sllpjiijp 1 currant mA MAX. ■ Paefcagfe ft- • 64k 8k x 8 LH2389D LH2369XX 200 60 5 ± 10% 28DIP 128k 16k x 8 LH23128D LH2326XX 200


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    PDF 28DIP 28DIP LH2389D LH23128D LH23286D LH236120 LH2310006D LH231G lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235

    lh5s4

    Abstract: lh537 48-TSOP LH5s 42-DIP 48TSOP1 LH5364P00D LH538 LH5S46
    Text: MEMORIES • Mask ROM Specific Pinout ★ U n d e rd e v e lo p m e n t • 3 V 3 .3 V operation Access time B it C a p a c ity configuration 1M x8 2M x 8/x 16 4M x 8/x 16 8M x 8/x 16 16M x 8/x 16 32 M x 8/x 16 64M 128M * x 8/x 16 x 16 Readable at 2.7 V.


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    PDF LH531000BN-S LH53V2P00AN/AT LH53V4P00N/T LH53V8500N/T LH53V16500AN/AT LH53V32500AN-2 LH53V32500AT-2 LH53V64P00T LH53V64POON LH53V12800T lh5s4 lh537 48-TSOP LH5s 42-DIP 48TSOP1 LH5364P00D LH538 LH5S46

    flash 64m

    Abstract: No abstract text available
    Text: MEMORIES Mask ROMs C a p a c ity Access time C o nfig u ra tio n 120ns 100ns 80ns 150ns 256kj I 32k x 8 ] LH53259 12k I 64k x 8 LH53517 128k x 8 LH530800A LH531V00 1M LH531024 64k x 16 i LH532100B-1 256k x 8 ! LH532100B 2M JEDEC standard EPROM pinout 128k x 161


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    PDF 100ns 120ns 150ns 256kj LH53259 LH53517 LH531V00 LH530800A LH531024 LH532048 flash 64m

    LQ070T5BG01

    Abstract: LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506
    Text: INDEX 1 0 4 - 1 0 9 _ DC_ GL1PR112.69 GL3KG63. 66 GL5EG41.66 1 0 4 - n 0 5 O o c .113 DC1B1CP. 100 GL1PR135.69 GL3KG8. 66


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    PDF 109-n GL1PR112. GL1PR135. GL1PR136. GL1PR211. GL1PR212. GL3KG63. GL3P201. GL3P202. GL3P305. LQ070T5BG01 LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506

    Untitled

    Abstract: No abstract text available
    Text: MEMORIES ★ Capacity Configuration * 1 C om patible with 4 M -bit flash m em ories from A d vanced M icro D evices, Inc. * 2 C om patible with 4 M -bit flash m em ories from Intel Corp. A c c e s s tim e Under development MEMORIES ★ Under development Access time


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    PDF 28kx8 128kx 256kx LH53H4000 LH532600 LH532000B-1 LH531000B LH532000B LH534600C LH534P00B

    IR3Y29B

    Abstract: ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR3Y08 IR2E02
    Text: Index Model No. IR3T ARM710 ARM7DI ARM7DM ARM7TDMI ARM7TDMI-SPL ARM8 ARM810 CMOS CMOS CMOS CMOS F series G series J series K series ID22 series ID222XX ID223XX ID224XX ID226XX ID227XX ID229XX ID22DXX ID22FXX ID22HXX ID240 series ID240DXX ID240EXX ID240GXX


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    PDF ARM710 ARM810 IR3T24 IR3T24N IR3Y05Y IR3Y08 IR3Y12B IR3Y18A IR3Y21 IR3Y26A IR3Y29B ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR2E02

    IR2E27A

    Abstract: IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31
    Text: lndeX Model No. ARM7D CPU Core28,32,33 ARM7DM 28,33 CMOS CMOS CMOS CMOS 76 5A A F G 44 44 44 44 ID1 series ID2 series ID3 seríes ID21K064 ID21K128 ID21K256 ID21K512 ID21M010 ID21M015 ID21M020 ID21M040 ID22K256 ID22K512 ID22M010 ID22M020 ID22M040 ID22M080


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    PDF Core28 IR2C24A/AN IR2C26 IR2C30/N IR2C32 IR2C33 IR2C34 IR2C36 IR2C38/N IR2C43 IR2E27A IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31