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    LH534600 Search Results

    LH534600 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    LH534600BD Sharp EPROM Parallel Async Original PDF
    LH534600BN Sharp EPROM Parallel Async Original PDF
    LH534600BT Sharp EPROM Parallel Async Original PDF
    LH534600BTR Sharp EPROM Parallel Async Original PDF

    LH534600 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    48-PIN

    Abstract: d1220
    Text: LH534600B FEATURES • 524,288 words x 8 bit organization Byte mode 262,144 words × 16 bit organization (Word mode) CMOS 4M (512K × 8/256K × 16) Mask-Programmable ROM PIN CONNECTIONS 40-PIN DIP 40-PIN SOP TOP VIEW A17 1 40 A8 A7 2 39 A9 • BYTE input pin selects bit configuration


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    PDF LH534600B 8/256K 40-PIN 40-pin, 600-mil 525-mil 48-pin, 48TSOP 48-PIN d1220

    MB834000

    Abstract: M5M23160 MB834100 MB838000 MB832000 SGS M27C256 I27C256 KM23C1010 M27C256 M27C256 intel
    Text: CROSS-REFERENCE GUIDE 1. EPROM CAPACITY CONFIGRUATION MACRONIX INTEL AMD N.S. S.G.S. 256K 32K x 8 MX27C256 i27C256 Am27C256 NM27C256 M27C256 512K 64K x 8 MX27C512 i27C512 Am27C512 NM27C512 M27C512 32K x 16 MX27C516 128K x 8 MX27C1000 i27C010 Am27C010 NM27C010


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    PDF MX27C256 i27C256 Am27C256 NM27C256 M27C256 MX27C512 i27C512 Am27C512 NM27C512 M27C512 MB834000 M5M23160 MB834100 MB838000 MB832000 SGS M27C256 I27C256 KM23C1010 M27C256 M27C256 intel

    MB8316200

    Abstract: uPD23C4000S TC533200 23C4000C UPD23C4000 23C32000a 624116 HN62318/338B
    Text: MEMORY ICS FUNCTION GUIDE 3. CROSS REFERENCE GUIDE Density 4M bit 8M bit Samsung NEC Hitachi Sharp Toshiba Fujitsu K M 23C4000C UPD23C4001EB HN62344B LH534700 TC534000C M B834000A K M 23C4100C UPD23C4000S HN62444 LH534600B TC534200C M B834200A K M 23C 4; OOCET UPD23C4000S


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    PDF 23C4000C 23C4100C 23C4200C 23V4000C KM23V41 KM23V41OOCET UPD23C4001EB UPD23C4000S HN62344B HN62444 MB8316200 uPD23C4000S TC533200 UPD23C4000 23C32000a 624116 HN62318/338B

    dl321

    Abstract: No abstract text available
    Text: LH534600 FEATURES • CMOS 4M 512K x 8 / 256K x 16 Mask-Programmable ROM DESCRIPTION 524,288 x 8 bit organization (Byte mode) 262,144 x 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access time: 100 ns (MAX.) • Low-power consumption:


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    PDF LH534600 40-pin, 600-mil 525-mil 44-pin, 48-pin, LH534600 40-PIN dl321

    Untitled

    Abstract: No abstract text available
    Text: LH534600B CMOS 4M 512K x 8/256K x 16 MROM FEATURES PIN CONNECTIONS • 524,288 words x 8 bit organization (Byte mode) 262,144 words x 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access time: 100 ns (MAX.) • Power consumption:


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    PDF LH534600B 40-pin, 600-mil 525-mil 48-pin, LH534600B 8/256K 40-PIN

    Untitled

    Abstract: No abstract text available
    Text: LH534600B CMOS 4M 512K x 8/256K x 16 MROM FEATURES PIN CONNECTIONS • 524,288 words x 8 bit organization (Byte mode) 262,144 words x 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access time: 100 ns (MAX.) • Power consumption:


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    PDF LH534600B 40-pin, 600-mil 525-mil 48-pin, LH534600B 8/256K 40-PIN

    Untitled

    Abstract: No abstract text available
    Text: CMOS 4M 512K x 8 / 256K x 16 Mask-Programmable ROM LH534600 FEATURES • 524,288 x 8 bit organization (Byte mode) 262,144 x 16 bit organization (Word mode) • • BYTE input pin selects bit configuration DESCRIPTION The LH534600 is a 4M bit mask-programmable ROM


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    PDF LH534600 40-pin, 600-mil 525-mil 44-pin, LH534600 I-------10

    Untitled

    Abstract: No abstract text available
    Text: LH534600B FEATURES • 524,288 words x 8 bit organization Byte mode 262,144 words x 16 bit organization (Word mode) • BYTE input pin selects bit configuration CMOS 4M (512K x 8/256K x 16) Mask-Programmable ROM PIN CONNECTIONS 40-PIN DIP 40-PIN SOP T O P VIEW


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    PDF LH534600B 40-pin, 600-mil 525-mil 48-pin, 8/256K 40-PIN 40-pln,

    sharp mask rom

    Abstract: sharp mask rom 44-pin
    Text: LH534600 / FEATURES • 524,288 x 8 bit organization Byte mode 262,144 x 16 bit organization (Word mode) • • • BYTE input pin selects bit configuration CMOS 4M (512K x 8 / 256K x 16) Mask Programmable ROM DESCRIPTION The LH534600 is a 4M bit mask programmable ROM


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    PDF LH534600 40-pin, 600-mil 525-mil 44-pin, sharp mask rom sharp mask rom 44-pin

    cd rom 40 pinout

    Abstract: ICE ICC3 LH534600AD-10
    Text: LH534600A C M O S 4 M 5 1 2 K x 8 /2 5 6 K M a s k -P r o g r a m m a b le x 1 6 R O M FEATURES DESCRIPTION • 524,288 x 8 bit organization (Byte mode) 262,144 x 16 bit organization (Word mode) The LH534600A is a 4M bit mask-programmable ROM with two programmable memory organizations of


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    PDF LH534600A 40-pin, 600-mil 525-mil 44-pin, 48-pin, 44-PIN LH534600A 34600A-3 cd rom 40 pinout ICE ICC3 LH534600AD-10

    lh5s4

    Abstract: lh5348 LH5s lh5s47xx 48-TSOP LH53H4100D LH53H4100N lh534y00d 48TSOP sharp mask rom
    Text: NEW PRODUCT INFORMATION SHARP LH53 H4100 • Description High-speed 4M-bit Mask-Programmable ROM ■ Pin Connections The LH53H4100D/N User's No. ! LH5H41XX is a CMOS 4M-bit mask-programmable ROM organized as 524 288 X 8 bits. It is fabricated using sillicon-gate CMOS process technology.


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    PDF LH53H4100 LH53H4100D/N LH5H41XX) LH53H4100D LH53H4100N 32-pin DIP032-P-0600) OP032-P-0525) A0-A18 lh5s4 lh5348 LH5s lh5s47xx 48-TSOP LH53H4100N lh534y00d 48TSOP sharp mask rom

    536G

    Abstract: LH534600
    Text: MEMORIES • Mask ROMs Process Capacity * Configuration words X bits Pinout Access time Model No. (ns) MIN. Supply current (mA) MAX. Supply voltage (V) (ns) MAX. User's No. Cycle tima Package 256k 32k X 8 J LH53259D/N/T L H 5359X X 150 25 5 ± 10% 28DIP/28SOP/28TSOP(I)


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    PDF LH53259D/N/T LH53517D/N/T/TR LH531VOOD/N/TAJ LH53V1ROON/T LH530800AD/AN/AU LHS30800AD/AN-Y LH531OOOBD/BN LH531000BN-S LH531024D/N/U LH532100BD 536G LH534600

    lh57257

    Abstract: IR2E31 IR2E01 IR2C07 IR2E27 IR2E24 IR2E19 IR2E31A IR3n06 IR2E02
    Text: Index Model No. ARM7D CPU Core Bi-CMOS 1 27 40,42 _ _ CMOS CMOS CMOS CMOS CMOS 4A 5A 8 A AH D ID1 Series ID2 Series 40,42 40.42 40,42 40,42 40 B ü.’1*"! 14,15 14 m IR2339 IR2403 IR2406 IR2406G IR2410 IR2411 IR2415 IR2419 IR2420 IR2422 IR2425 IR2429


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    PDF IR2E201 IR2E24 IR2E27/A IR2E28 IR2E29 IR2E30 IR2E31/A IR2E32N9 IR2E34 IR2E41 lh57257 IR2E31 IR2E01 IR2C07 IR2E27 IR2E19 IR2E31A IR3n06 IR2E02

    LH231G

    Abstract: lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235
    Text: MEMORIES ★Under development • M ask ROMs SlpÉHRfi Bonflgmllan jvorai x d m i NMOS <"^g|g|ï|ïi£- User1* No. sssysr Sllpjiijp 1 currant mA MAX. ■ Paefcagfe ft- • 64k 8k x 8 LH2389D LH2369XX 200 60 5 ± 10% 28DIP 128k 16k x 8 LH23128D LH2326XX 200


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    PDF 28DIP 28DIP LH2389D LH23128D LH23286D LH236120 LH2310006D LH231G lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235

    flash 64m

    Abstract: No abstract text available
    Text: MEMORIES Mask ROMs C a p a c ity Access time C o nfig u ra tio n 120ns 100ns 80ns 150ns 256kj I 32k x 8 ] LH53259 12k I 64k x 8 LH53517 128k x 8 LH530800A LH531V00 1M LH531024 64k x 16 i LH532100B-1 256k x 8 ! LH532100B 2M JEDEC standard EPROM pinout 128k x 161


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    PDF 100ns 120ns 150ns 256kj LH53259 LH53517 LH531V00 LH530800A LH531024 LH532048 flash 64m

    lh5348

    Abstract: lh5s4 48TSO
    Text: ü fi LH53V4R00 LH53V4R00-2 • Description ■ Pin Connect for T h e L H 5 3 V 4 R 0 0 N /T , L H 5 3 V 4 R 0 0 N /T -2 U ser's N o . : L H 5V 4R X X is a CM OS 4 M -b it m ask-program m able ROM 32-pin SOP organized as 524 288 X 8 bits. It provides a high-speed access time o f 120/150 ns with low


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    PDF LH53V4R00 LH53V4R00-2 32-pin LHS3V4R00-2 lh5348 lh5s4 48TSO

    lh5348

    Abstract: TSOP032-P-0820 lh5s4 flash memory sop 32-pin lh5348xx lh5s47xx
    Text: NEW PRODUCT INFORMATION LH53V4R00 LH53V4R00-2 • Low-Voltage • High-Speed 4M-bit Mask-Programmable ROM Description Pin Connection T he L H 5 3 V 4 R 0 0 N /T , L H 5 3 V 4 R 0 0 N /T -2 U s e r's N o. : LH5V4RXX is a CM O S 4M -bit m ask-program m able ROM


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    PDF LH53V4R00 LH53V4R00-2 LH53V4R00N/T, LH53V4R00N/T-2 LH53V4R00 LH53V4R00N1LH53V4R00N-2 32-pin lh5348 TSOP032-P-0820 lh5s4 flash memory sop 32-pin lh5348xx lh5s47xx

    lh5s4

    Abstract: lh5348 sharp lh53 lh5s47xx LH5S47 60446 sharp mask rom LH53V4R00N LH5H41XX TSOP032-P-0820
    Text: NEW PRODUCT INFORMATION LH53V4R00 LH53V4R00-2 • Description Low-Voltage • High-Speed 4M-bit Mask-Programmable ROM Pin Connection The L H 53V 4R 00N /T , L H 53V 4 R 0 0 N /T -2 U ser’s N o. : LH5V4RXX is a CMOS 4M -bit mask-programmable ROM 32-pin SOP


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    PDF LH53V4R00 LH53V4R00-2 LH53V4R00N/T, LH53V4R00N/T-2 32-pin LH53V4R00N lh5s4 lh5348 sharp lh53 lh5s47xx LH5S47 60446 sharp mask rom LH5H41XX TSOP032-P-0820

    LQ070T5BG01

    Abstract: LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506
    Text: INDEX 1 0 4 - 1 0 9 _ DC_ GL1PR112.69 GL3KG63. 66 GL5EG41.66 1 0 4 - n 0 5 O o c .113 DC1B1CP. 100 GL1PR135.69 GL3KG8. 66


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    PDF 109-n GL1PR112. GL1PR135. GL1PR136. GL1PR211. GL1PR212. GL3KG63. GL3P201. GL3P202. GL3P305. LQ070T5BG01 LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506

    Untitled

    Abstract: No abstract text available
    Text: MEMORIES ★ Capacity Configuration * 1 C om patible with 4 M -bit flash m em ories from A d vanced M icro D evices, Inc. * 2 C om patible with 4 M -bit flash m em ories from Intel Corp. A c c e s s tim e Under development MEMORIES ★ Under development Access time


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    PDF 28kx8 128kx 256kx LH53H4000 LH532600 LH532000B-1 LH531000B LH532000B LH534600C LH534P00B

    IR3Y29B

    Abstract: ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR3Y08 IR2E02
    Text: Index Model No. IR3T ARM710 ARM7DI ARM7DM ARM7TDMI ARM7TDMI-SPL ARM8 ARM810 CMOS CMOS CMOS CMOS F series G series J series K series ID22 series ID222XX ID223XX ID224XX ID226XX ID227XX ID229XX ID22DXX ID22FXX ID22HXX ID240 series ID240DXX ID240EXX ID240GXX


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    PDF ARM710 ARM810 IR3T24 IR3T24N IR3Y05Y IR3Y08 IR3Y12B IR3Y18A IR3Y21 IR3Y26A IR3Y29B ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR2E02

    48 tsop flash pinout

    Abstract: LH23512
    Text: MEMORIES Mask ROMs ^Under development Capacity Pinout Model No. Configuration Access time ns 55 1 64k !- 1 8k x 8 128k 16k x ! 256k 32k x 8 |- -) [ 512k 64k x 8 b — I 80 100 120 150 200 Package 250 500 □ LH2369 28 LH23255 28 □ LH53259 28 28 38(1)


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    PDF LH2369 LH23126 LH23255 LH53259 LH23512 LH53517 LH53H0900 LH531VOO LH530800A LH530800A-Y 48 tsop flash pinout

    lh5s4

    Abstract: LH537 lh5s4p lh5s4R lh5s46 LH538 44SOP lh533200 LH5s 5g85
    Text: MASK ROM ☆ New product ★ • M Capacity ASK F O M S Bit Pinout* configuration Model No. LH53V4T00E J J x8 4M x 16 x 8/ x 16 x8 8M x 8/ x 16 LH53V4ROOAN/AT LH53V4R00N/T J J J LH53V4YG0N/E LH53H4100D/N LH534700D/N LH534R00BD/BN LH53V4B00T J J F F LH534A00T


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    PDF LH53V4T00E LH53V4ROOAN/AT LH53V4R00N/T LH53V4YG0N/E LH53H4100D/N LH534700D/N LH534R00BD/BN LH53V4B00T LH534A00T LH534BOOT lh5s4 LH537 lh5s4p lh5s4R lh5s46 LH538 44SOP lh533200 LH5s 5g85

    IR2E27A

    Abstract: IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31
    Text: lndeX Model No. ARM7D CPU Core28,32,33 ARM7DM 28,33 CMOS CMOS CMOS CMOS 76 5A A F G 44 44 44 44 ID1 series ID2 series ID3 seríes ID21K064 ID21K128 ID21K256 ID21K512 ID21M010 ID21M015 ID21M020 ID21M040 ID22K256 ID22K512 ID22M010 ID22M020 ID22M040 ID22M080


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    PDF Core28 IR2C24A/AN IR2C26 IR2C30/N IR2C32 IR2C33 IR2C34 IR2C36 IR2C38/N IR2C43 IR2E27A IR2C53 IR2E02 IR2E27 IR2E10 IR3N34 IR2E31A IR2E01 IR2C07 ir2e31