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    lh533200

    Abstract: D4233 sharp mask rom 44-pin
    Text: PRELIMINARY LH5332000 FEATURES • 4,194,304 x 8 bit organization Byte mode 2,097,152 x 16 bit organization (Word mode) • B YTE input pin selects bit configuration • Access time: 200 ns (MAX.) • Power consumption: Operating: 275 mW (MAX.) Standby: 550


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    PDF LH5332000 44-pin, 600-mil 64-pin, 44-PIN LH5332000 I-----20 QFP64-P-1420) lh533200 D4233 sharp mask rom 44-pin

    LH5332000

    Abstract: sharp mask rom 44-pin sharp mask rom A-1435
    Text: PRELIMINARY LH5332000 / FEATURES • 4,194,304 x 8 bit organization Byte mode 2,097,152 x 16 bit organization (Word mode) • BYTE input pin selects bit configuration • Access time: 200 ns (MAX.) CMOS 32M (4M x 8 / 2M x 16) Mask Programmable ROM DESCRIPTION


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    PDF LH5332000 44-PIN D15/A LH5332000 64-pin, QFP64-P-1420) 44-pin, 600-mil OP44-P-600) sharp mask rom 44-pin sharp mask rom A-1435

    MB8316200

    Abstract: uPD23C4000S TC533200 23C4000C UPD23C4000 23C32000a 624116 HN62318/338B
    Text: MEMORY ICS FUNCTION GUIDE 3. CROSS REFERENCE GUIDE Density 4M bit 8M bit Samsung NEC Hitachi Sharp Toshiba Fujitsu K M 23C4000C UPD23C4001EB HN62344B LH534700 TC534000C M B834000A K M 23C4100C UPD23C4000S HN62444 LH534600B TC534200C M B834200A K M 23C 4; OOCET UPD23C4000S


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    PDF 23C4000C 23C4100C 23C4200C 23V4000C KM23V41 KM23V41OOCET UPD23C4001EB UPD23C4000S HN62344B HN62444 MB8316200 uPD23C4000S TC533200 UPD23C4000 23C32000a 624116 HN62318/338B

    lh5s4

    Abstract: lh537 48-TSOP LH5s 42-DIP 48TSOP1 LH5364P00D LH538 LH5S46
    Text: MEMORIES • Mask ROM Specific Pinout ★ U n d e rd e v e lo p m e n t • 3 V 3 .3 V operation Access time B it C a p a c ity configuration 1M x8 2M x 8/x 16 4M x 8/x 16 8M x 8/x 16 16M x 8/x 16 32 M x 8/x 16 64M 128M * x 8/x 16 x 16 Readable at 2.7 V.


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    PDF LH531000BN-S LH53V2P00AN/AT LH53V4P00N/T LH53V8500N/T LH53V16500AN/AT LH53V32500AN-2 LH53V32500AT-2 LH53V64P00T LH53V64POON LH53V12800T lh5s4 lh537 48-TSOP LH5s 42-DIP 48TSOP1 LH5364P00D LH538 LH5S46

    lh537

    Abstract: 42DIP lh533200 LH535g
    Text: MEMORIES • Mask ROMs Process CMOS ★ U n d e r development MEMORIES ★ Under developm ent Configuration Process Capacity (wortsxbits Access time (ns) MAX. Model No. Pinout LH-538VXX 100 100 5 ± 10% 32DIP/32SOP/32TSOPÎII) Normal 120 60 5 ± 10% L H 5 3 8 3 0 0 C D /C W C S Æ S H


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    PDF LH-538VXX LH-5387XX LH-538NXX 32DIP/32SOP/32TSOP 32DIP/32SOP/ 32TSOP 42DIP/44SOP 48TSOP0) lh537 42DIP lh533200 LH535g

    uPD23C4000

    Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A


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    PDF 64Kx4 KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 64Kx8 256KX4 KM428C64 uPD23C4000 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000

    LQ070T5BG01

    Abstract: LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506
    Text: INDEX 1 0 4 - 1 0 9 _ DC_ GL1PR112.69 GL3KG63. 66 GL5EG41.66 1 0 4 - n 0 5 O o c .113 DC1B1CP. 100 GL1PR135.69 GL3KG8. 66


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    PDF 109-n GL1PR112. GL1PR135. GL1PR136. GL1PR211. GL1PR212. GL3KG63. GL3P201. GL3P202. GL3P305. LQ070T5BG01 LM24P20 LM162KS1 BSCR86L00 IR2C07 LM5Q31 IR3Y29B BSCU86L60 lq6bw lq6bw506

    Untitled

    Abstract: No abstract text available
    Text: MEMORIES ★ Capacity Configuration * 1 C om patible with 4 M -bit flash m em ories from A d vanced M icro D evices, Inc. * 2 C om patible with 4 M -bit flash m em ories from Intel Corp. A c c e s s tim e Under development MEMORIES ★ Under development Access time


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    PDF 28kx8 128kx 256kx LH53H4000 LH532600 LH532000B-1 LH531000B LH532000B LH534600C LH534P00B

    IR3Y29B

    Abstract: ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR3Y08 IR2E02
    Text: Index Model No. IR3T ARM710 ARM7DI ARM7DM ARM7TDMI ARM7TDMI-SPL ARM8 ARM810 CMOS CMOS CMOS CMOS F series G series J series K series ID22 series ID222XX ID223XX ID224XX ID226XX ID227XX ID229XX ID22DXX ID22FXX ID22HXX ID240 series ID240DXX ID240EXX ID240GXX


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    PDF ARM710 ARM810 IR3T24 IR3T24N IR3Y05Y IR3Y08 IR3Y12B IR3Y18A IR3Y21 IR3Y26A IR3Y29B ir3y26a1 IR4N IR3T24N IR3C08N ir2c53 ir2c05 li3301 IR2E02

    41C464

    Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
    Text: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page


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    PDF 41C256 41C257 41C258 41C464 41C466 41C1000 41C1002 44C256 44C258 41C4000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100

    K93C46

    Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257


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    PDF 416C256 14800A 14900A 514170B 514280B KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP HN624017FB K93C46 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256

    TC55B8128

    Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6


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    PDF TC511001 TC514101 514170B 514280B TC5316200P KM2X16100 KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP TC55B8128 KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256

    TC55B4257

    Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
    Text: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264


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    PDF KM424C64 MT42C4064 uPD41264 uPD42264 HM53461 TMS4461 KM428C64 KM424C256 KM424C256A TC524256 TC55B4257 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v

    lh5s4

    Abstract: LH537 lh5s4p lh5s4R lh5s46 LH538 44SOP lh533200 LH5s 5g85
    Text: MASK ROM ☆ New product ★ • M Capacity ASK F O M S Bit Pinout* configuration Model No. LH53V4T00E J J x8 4M x 16 x 8/ x 16 x8 8M x 8/ x 16 LH53V4ROOAN/AT LH53V4R00N/T J J J LH53V4YG0N/E LH53H4100D/N LH534700D/N LH534R00BD/BN LH53V4B00T J J F F LH534A00T


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    PDF LH53V4T00E LH53V4ROOAN/AT LH53V4R00N/T LH53V4YG0N/E LH53H4100D/N LH534700D/N LH534R00BD/BN LH53V4B00T LH534A00T LH534BOOT lh5s4 LH537 lh5s4p lh5s4R lh5s46 LH538 44SOP lh533200 LH5s 5g85

    al 232 nec

    Abstract: TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference
    Text: CROSS REFERENCE GUIDE MEMORY ICs CROSS REFERENCE GUIDE 1 .DRAM Density 256K Org. X1 x4 1M x1 X4 4M X1 x4 Mode Toshiba Hitachi Fujitsu NEC Oki MSM51C256 F.Page KM41C256 TC51256 HM51256 MB81256 Nibble KM41C257 TC51257 MB81257 — S. Column KM41C258 TC51258


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    PDF KM41C256 KM41C257 KM41C258 KM41C464 KM41C466 KM41C1000 KM41C1001 KM41C1002 KM44C256 KM44C258 al 232 nec TC55B4257 MB832001 NM9306 eeprom Cross Reference D41264 TC5116100 HN28C256 NM9307 oki cross reference