LHMN5
Abstract: 48TSOP LH5332600 LH5332600N LH5332600T LH5332C00D TSOP048-P-1218 LH5332500 2sj au LHMV
Text: NBA/ INFORMATION LH5332600 • High-speed 32M-bit Mask-Programmable ROM Pin Connections Description The LH5332600N/T User's No. : LHMN56XX/LHMN5FXX is a CM OS 32M-bit mask-programmable ROM organized as 4 194 304X8 bits (Byte mode) or 2 097 152X 16 bits (Word
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LH5332600
32M-bit
LH5332600N/T
LHMN56XX/LHMN5FXX)
32\l-bit
304X8
LH5332600N
44-pin
OP044-P-0600)
LH5332600T
LHMN5
48TSOP
LH5332600
LH5332C00D
TSOP048-P-1218
LH5332500
2sj au
LHMV
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LHMN5
Abstract: sharp mask rom 44-pin LH5332600N 2MX16 LH5332600 LH5332600T LH5332C00D LH535
Text: LH5332600 • Description High-speed 32M-bit Mask-Programmable ROM Pin Connections . The LH5332600N/T User’s No. : LHMN56XX/LHMN5FXX is a CMOS 32M-bit mask-programmable ROM organized as 4 194 3 0 4 X 8 bits (Byte mode) or 2 097 152 X 16 bits (Word mode) that can be selected by BYTE input pin.
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LH5332600
32M-bit
LH5332600N/T
LHMN56XX/LHMN5FXX)
304X8
194304X8
100mA
LH5332600N
44-pin
LHMN5
sharp mask rom 44-pin
2MX16
LH5332600
LH5332600T
LH5332C00D
LH535
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lhmn5
Abstract: 2600T LH5332600T LH53 DA-14-L
Text: I LH53 3 2 6 00 T C O N T E N T 1 S 1 J. General Description P. 2 2. Features P. 2 3. Block Diagram P. 3 4. Pin Connections P. 4 5. Pin Description P. 4 6. Absolute Maximum Ratings P. 5 n t. Operating Ranges P. 5 8. D.C. Electrical Characteristics P. 5 9. A. C. Electrical Characteristics
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2600T
Q017174
LH5332600T
-1-A20
A0-A20
D0-D15
DG1717S
lhmn5
2600T
LH53
DA-14-L
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LH231G
Abstract: lh5348 LH538b LH2326 lh5s4 LHMN5 lh5359 lh5348xx lh537 LH235
Text: MEMORIES ★Under development • M ask ROMs SlpÉHRfi Bonflgmllan jvorai x d m i NMOS <"^g|g|ï|ïi£- User1* No. sssysr Sllpjiijp 1 currant mA MAX. ■ Paefcagfe ft- • 64k 8k x 8 LH2389D LH2369XX 200 60 5 ± 10% 28DIP 128k 16k x 8 LH23128D LH2326XX 200
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28DIP
28DIP
LH2389D
LH23128D
LH23286D
LH236120
LH2310006D
LH231G
lh5348
LH538b
LH2326
lh5s4
LHMN5
lh5359
lh5348xx
lh537
LH235
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lh5s4
Abstract: lh537 48-TSOP LH5s 42-DIP 48TSOP1 LH5364P00D LH538 LH5S46
Text: MEMORIES • Mask ROM Specific Pinout ★ U n d e rd e v e lo p m e n t • 3 V 3 .3 V operation Access time B it C a p a c ity configuration 1M x8 2M x 8/x 16 4M x 8/x 16 8M x 8/x 16 16M x 8/x 16 32 M x 8/x 16 64M 128M * x 8/x 16 x 16 Readable at 2.7 V.
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LH531000BN-S
LH53V2P00AN/AT
LH53V4P00N/T
LH53V8500N/T
LH53V16500AN/AT
LH53V32500AN-2
LH53V32500AT-2
LH53V64P00T
LH53V64POON
LH53V12800T
lh5s4
lh537
48-TSOP
LH5s
42-DIP
48TSOP1
LH5364P00D
LH538
LH5S46
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lh537
Abstract: 42DIP lh533200 LH535g
Text: MEMORIES • Mask ROMs Process CMOS ★ U n d e r development MEMORIES ★ Under developm ent Configuration Process Capacity (wortsxbits Access time (ns) MAX. Model No. Pinout LH-538VXX 100 100 5 ± 10% 32DIP/32SOP/32TSOPÎII) Normal 120 60 5 ± 10% L H 5 3 8 3 0 0 C D /C W C S Æ S H
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LH-538VXX
LH-5387XX
LH-538NXX
32DIP/32SOP/32TSOP
32DIP/32SOP/
32TSOP
42DIP/44SOP
48TSOP0)
lh537
42DIP
lh533200
LH535g
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lh5s4
Abstract: LH537 lh5s4p lh5s4R lh5s46 LH538 44SOP lh533200 LH5s 5g85
Text: MASK ROM ☆ New product ★ • M Capacity ASK F O M S Bit Pinout* configuration Model No. LH53V4T00E J J x8 4M x 16 x 8/ x 16 x8 8M x 8/ x 16 LH53V4ROOAN/AT LH53V4R00N/T J J J LH53V4YG0N/E LH53H4100D/N LH534700D/N LH534R00BD/BN LH53V4B00T J J F F LH534A00T
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LH53V4T00E
LH53V4ROOAN/AT
LH53V4R00N/T
LH53V4YG0N/E
LH53H4100D/N
LH534700D/N
LH534R00BD/BN
LH53V4B00T
LH534A00T
LH534BOOT
lh5s4
LH537
lh5s4p
lh5s4R
lh5s46
LH538
44SOP
lh533200
LH5s
5g85
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K32I
Abstract: lhmn5
Text: SHARP SPEC No. I M R 9 5 4 0 7 ISSUE: Apr. 24 1995 To ; 1PRELIMINANY[ S P E C I F I C Product Type_ 3 2 M b i t A T Mask I O N S ROM LH M N 5Fxx Model No. L H 5 3 3 2 6 0 0 I ntThis specifications contains 3 pages including the cover and appendix.
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LH5332600T
LH5332600T
-1-A20
A0-A20
K32I
lhmn5
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