M28F512 Search Results

Contextual Info: M28F512-12C1 IL08D C-MOS 512 K 65, 536 x 8 -BIT FLASH MEMORY 1 31 VDD A7 IN 5 32 29 30 28 NC 2 3 W IN 3 VPP IN A15 IN 4 NC A12 IN —TOP VIEW— 4 A6 IN 6 29 A14 IN 28 A13 IN A5 IN 7 27 A8 IN A4 IN 8 26 A9 IN A3 IN 9 25 A11 IN A2 IN 10 24 G IN A1 IN 11 23 A10 IN

M28F512

Abstract: PDIP32 PLCC32 m28f512-25
Contextual Info: /= T S G S -T H O M S O N ^ 7 # !M g ^ (Q iti(M (Q M (g § M28F512 CMOS 512K (64K x 8) FLASH MEMORY • FAST ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION - Standby Current: 200|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMMING TIME 10ns

M28F512

Contextual Info: rZ 7 SCS-THOMSON M28F512 512K 64K x 8, Bulk Erase FLASH MEMORY DATA B RIEFING • ■ ■ ■ ■ ■ 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMING TIME: 10ns typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION

M28F512

Abstract: PDIP32 PLCC32 1N914 m28f512-25
Contextual Info: M28F512 512 Kbit 64Kb x8, Bulk Flash Memory 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 5µA typical 10,000 ERASE/PROGRAM CYCLES

M28F512-25

Abstract: 1N914 M28F512 FCA3
Contextual Info: S G S -T H O M S O N r= T ^ 7 # . M28F512 [t£ Ü B @ Ë lL l5 g Îfii* © l]© i 512K (64Kx 8, Chip Erase FLASH MEMORY • FAST ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION - Standby Current: 200jiA Max ■ 10,000ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE

PLCC32 package

Abstract: M28F102 M28F101 M28F512 PLCC32 QRFL9809 quality control procedure st
Contextual Info: QRFL9809 QUALIFICATION REPORT M28F512 T5-U20: 512 Kbit x8 Dual Supply Flash Memory INTRODUCTION The M28F512 is a 512 Kbit Dual Supply (5V/12V) Flash memory organized as 64 KByte of 8 bits each. It is offered in PLCC32 package. The M28F512 is manufactured with the STMicroelectronics advanced CMOS 0.8 micron T5-U20 (-20%

M28F512

Abstract: PDIP32 PLCC32
Contextual Info: M28F512 512 Kbit 64Kb x8, Bulk Flash Memory DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 5µA typical

Contextual Info: r Z J S G S -T H O M S O N M28F512 512K 64K x 8, Chip Erase FLASH MEMORY • FAST ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION - Standby Current: 200|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMMING TIME 10ns

M28F512

Abstract: PLCC32
Contextual Info: QUALIFICATION REPORT M28F512 512K 64K x 8 CMOS T5-U20 FLASH MEMORY in PLCC32 INTRODUCTION The M28F512 is a 512K FLASH Memory organised as 64K x 8 bits. It is manufactured in the SGS-THOMSON Advanced CMOS 0.8 micron T5-U20 (-20% upgrade) process which has been especially developed

1N914

Abstract: M28F512 T237
Contextual Info: S G S -T H O M S O N M28F512 M [f3 @ !!i© W ;i R î] S l 512K (64K x 8, Chip Erase) FLASH MEMORY • FAST ACCESS TIME: 90ns ■ LOW POWER CONSUMPTION - Standby Current: 100|jA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMING TIME 10|is

M28F512

Contextual Info: {Z T SGS-THOMSON M28F512 CMOS 512K 64K x 8, Chip Erase FLASH MEMORY ABBREVIATED DATA FAST ACCESS TIME: 120ns LOW POWER CONSUMPTION - Standby Current: 200|xA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMMING TIME 10^is (PRESTO F ALGORITHM)

Contextual Info: Æ 7 SCS-THOMSON * 7 # K f ô m iO T ® ® M28F512 « CMOS 512K 64K x 8 FLASH MEMORY • FAST ACCESS TIME: 100ns ■ LOW POWER CONSUMPTION - Standby Current: 200|iA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMM ING VOLTAGE ■ TYPICAL BYTE PROGRAMM ING TIM E 10ns

1N914

Abstract: M28F512 PDIP32 PLCC32
Contextual Info: M28F512 512K 64K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE in 1s RANGE

m28f512-25

Contextual Info: M28F512 512 Kbit 64Kb x8, Bulk Erase Flash Memory • ■ ■ ■ ■ ■ 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMING TIME: 10jis typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION - Stand-by Current: 5(iA typical

TSOP32 FOOTPRINT

Abstract: M28F101 M29F010B
Contextual Info: AN1251 APPLICATION NOTE Replacing the M28F256, M28F512 and M28F101 with the M29F512B and M29F010B Flash Memories CONTENTS • INTRODUCTION ■ HARDWARE COMPATIBILITY ■ SOFTWARE UPGRADE ■ OTHER CONSIDERATIONS ■ CONCLUSION INTRODUCTION This application note will help you to replace the M28F256,

M28F512

Abstract: M28F512-25
Contextual Info: M28F512 512K 64K x 8, Chip Erase FLASH MEMORY DATA BRIEFING FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE in 1s RANGE

l035

Abstract: M28F512 PDIP32 PLCC32 EPROM retention al008 14045B
Contextual Info: _ M28F512 512 Kbit 64Kb x8, Bulk Erase Flash Memory • ■ ■ ■ ■ ■ 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME 90ns BYTE PROGRAMING TIME 10^s typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION

M28F512

Abstract: PDIP32 PLCC32
Contextual Info: M28F512 512K 64K x 8, Bulk Erase FLASH MEMORY DATA BRIEFING 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION – Stand-by Current: 100µA max

1N914

Abstract: M28F512 PDIP32 PLCC32
Contextual Info: M28F512 512K 64K x 8, Chip Erase FLASH MEMORY FAST ACCESS TIME: 90ns LOW POWER CONSUMPTION – Standby Current: 100µA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMING TIME 10µs (PRESTO F ALGORITHM) ELECTRICAL CHIP ERASE in 1s RANGE

T5-U20

Contextual Info: QUALIFICATION REPORT M28F512 512K 64K x 8 CMOS T5-U20 FLASH MEMORY in PLCC32 INTRODUCTION The M28F512 is a 512K FLASH Memory organised as 64K x 8 bits. It is manufactured in the SGS-THOMSON Advanced CMOS 0.8 micron T5-U20 (-20% upgrade) process which has been especially developed

M28F101

Abstract: M29F010B Device M29F010B 28F256 AN1165 AN1251 M28F256 M28F512 PDIP32 PLCC32
Contextual Info: AN1251 APPLICATION NOTE Replacing the M28F256, M28F512 and M28F101 with the M29F010B Flash Memory CONTENTS • INTRODUCTION ■ HARDWARE COMPATIBILITY ■ SOFTWARE UPGRADE ■ OTHER CONSIDERATIONS ■ CONCLUSION ■ REVISION HISTORY INTRODUCTION This application note will help you to replace the M28F256,

Contextual Info: Æ T S G S -T H O M S O N M28F512 ^7# CMOS 512K 64K x 8, Chip Erase FLASH MEMORY • FAST ACCESS TIME: 120ns - LOW POWER CONSUMPTION - Standby Current: 200jiA Max ■ 10,000 ERASE/PROGRAM CYCLES ■ 12V PROGRAMMING VOLTAGE ■ TYPICAL BYTE PROGRAMMING TIME 10ns

TSOP32 FOOTPRINT

Abstract: TSOP32 8 X 14 FOOTPRINT M28F101 M29F010B Device M29F010B 28F256 AN1251 M28F256 M28F512 M29F512B
Contextual Info: AN1251 APPLICATION NOTE Replacing the M28F256, M28F512 and M28F101 with the M29F512B and M29F010B Flash Memories CONTENTS • INTRODUCTION ■ HARDWARE COMPATIBILITY ■ SOFTWARE UPGRADE ■ OTHER CONSIDERATIONS ■ CONCLUSION INTRODUCTION This application note will help you to replace the M28F256,

TSOP40 Flash

Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS