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    M5362 Search Results

    M5362 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LM53625AQRNLRQ1 Texas Instruments 2.5/3.5A, 36 V Synchronous, 2.1MHz, Automotive Step Down DC-DC Converter 22-VQFN-HR -40 to 150 Visit Texas Instruments Buy
    LM53625MQRNLRQ1 Texas Instruments 2.5/3.5A, 36 V Synchronous, 2.1MHz, Automotive Step Down DC-DC Converter 22-VQFN-HR -40 to 150 Visit Texas Instruments Buy
    LM53625NQRNLTQ1 Texas Instruments 2.5/3.5A, 36 V Synchronous, 2.1MHz, Automotive Step Down DC-DC Converter 22-VQFN-HR -40 to 150 Visit Texas Instruments Buy
    LM53625LQRNLRQ1 Texas Instruments 2.5/3.5A, 36 V Synchronous, 2.1MHz, Automotive Step Down DC-DC Converter 22-VQFN-HR -40 to 150 Visit Texas Instruments Buy
    LM536253QRNLRQ1 Texas Instruments 2.5/3.5A, 36 V Synchronous, 2.1MHz, Automotive Step Down DC-DC Converter 22-VQFN-HR -40 to 150 Visit Texas Instruments Buy
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    M5362 Price and Stock

    Texas Instruments LM53625LQRNLRQ1

    IC REG BUCK 5V 2.5A 22VQFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LM53625LQRNLRQ1 Reel 6,000 3,000
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    Mouser Electronics LM53625LQRNLRQ1
    • 1 $5.54
    • 10 $4.98
    • 100 $4.08
    • 1000 $2.92
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    Bristol Electronics LM53625LQRNLRQ1 250
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    Win Source Electronics LM53625LQRNLRQ1 20,373
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    Texas Instruments LM53625LQURNLRQ1

    IC REG BUCK 5V 2.5A 22VQFN
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    DigiKey LM53625LQURNLRQ1 Cut Tape 6,000 1
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    LM53625LQURNLRQ1 Digi-Reel 6,000 1
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    LM53625LQURNLRQ1 Reel 6,000 3,000
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    Texas Instruments LM53625MQURNLRQ1

    IC REG BUCK ADJ 2.5A 22VQFN
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    DigiKey LM53625MQURNLRQ1 Cut Tape 6,000 1
    • 1 $5.05
    • 10 $3.852
    • 100 $3.2215
    • 1000 $2.89094
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    LM53625MQURNLRQ1 Reel 6,000 3,000
    • 1 -
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    LM53625MQURNLRQ1 Digi-Reel 6,000 1
    • 1 $5.05
    • 10 $3.852
    • 100 $3.2215
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    Win Source Electronics LM53625MQURNLRQ1 2,640
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    Texas Instruments LM53625LQRNLTQ1

    IC REG BUCK 5V 2.5A 22VQFN
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    DigiKey LM53625LQRNLTQ1 Cut Tape 1,750 1
    • 1 $5.81
    • 10 $4.452
    • 100 $3.7376
    • 1000 $3.7376
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    LM53625LQRNLTQ1 Reel 1,750 250
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    Win Source Electronics LM53625LQRNLTQ1 3,480
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    Texas Instruments LM53625MQRNLTQ1

    IC REG BUCK ADJ 2.5A 22VQFN
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    DigiKey LM53625MQRNLTQ1 Digi-Reel 750 1
    • 1 $5.81
    • 10 $4.452
    • 100 $3.7376
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    LM53625MQRNLTQ1 Reel 750 250
    • 1 -
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    • 1000 $3.55928
    • 10000 $3.27002
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    LM53625MQRNLTQ1 Cut Tape 750 1
    • 1 $5.81
    • 10 $4.452
    • 100 $3.7376
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    Mouser Electronics LM53625MQRNLTQ1 2,745
    • 1 $6.47
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    Win Source Electronics LM53625MQRNLTQ1 2,480
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    • 100 $3.4512
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    • 10000 $3.4512
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    Find more M5362 price and stock on Findchips.com

    M5362 Datasheets (46)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    M53620400CB0 Samsung Electronics 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V Original PDF
    M53620400CB0-C50 Samsung Electronics 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V Original PDF
    M53620400CB0-C60 Samsung Electronics 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V Original PDF
    M53620400CW0 Samsung Electronics 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V Original PDF
    M53620400CW0-C50 Samsung Electronics 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V Original PDF
    M53620400CW0-C60 Samsung Electronics 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V Original PDF
    M53620405BT0-C50 Samsung Electronics 4M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V Original PDF
    M53620405BT0-C60 Samsung Electronics 4M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V Original PDF
    M53620405BY0-C50 Samsung Electronics 4M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V Original PDF
    M53620405BY0-C60 Samsung Electronics 4M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V Original PDF
    M53620405CT0-C50 Samsung Electronics Fast Page Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad inverted CAS 4Mx4, 4K Refresh, 5V Original PDF
    M53620405CT0-C60 Samsung Electronics Fast Page Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad inverted CAS 4Mx4, 4K Refresh, 5V Original PDF
    M53620405CY0-C50 Samsung Electronics Fast Page Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad inverted CAS 4Mx4, 4K Refresh, 5V Original PDF
    M53620405CY0-C60 Samsung Electronics Fast Page Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad inverted CAS 4Mx4, 4K Refresh, 5V Original PDF
    M53620410CB0 Samsung Electronics 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V Original PDF
    M53620410CB0-C50 Samsung Electronics 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 2K Refresh, 5V Original PDF
    M53620410CW0 Samsung Electronics 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V Original PDF
    M53620410CW0-C60 Samsung Electronics 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 2K Refresh, 5V Original PDF
    M53620412CB0-C50 Samsung Electronics Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V Original PDF
    M53620412CB0-C60 Samsung Electronics Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V Original PDF

    M5362 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: M53620800DW0/DB0 M53620810DW0/DB0 DRAM MODULE M53620800DW0/DB0 & M53620810DW0/DB0 with Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5362080 1 0D is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5362080(1)0D


    Original     		PDF M53620800DW0/DB0 M53620810DW0/DB0 M53620810DW0/DB0 M5362080 8Mx36bits 24-pin 28-pin 72-pin

    4Mx4 dram simm

    Abstract: No abstract text available
    Text: M53620800CW0/CB0 M53620810CW0/CB0 DRAM MODULE M53620800CW0/CB0 & M53620810CW0/CB0 with Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5362080 1 0C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M5362080(1)0C


    Original     		PDF M53620800CW0/CB0 M53620810CW0/CB0 M53620810CW0/CB0 M5362080 8Mx36bits 24-pin 28-pin 72-pin 4Mx4 dram simm

    Untitled

    Abstract: No abstract text available
    Text: Preliminary M53620800DW0/DB0 M53620810DW0/DB0 DRAM MODULE M53620800DW0/DB0 & M53620810DW0/DB0 with Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5362080 1 0D is a 8Mx36bits Dynamic RAM


    Original     		PDF M53620800DW0/DB0 M53620810DW0/DB0 M53620800DW0/DB0 M53620810DW0/DB0 M5362080 8Mx36bits 24-pin 28-pin 72-pin

    Untitled

    Abstract: No abstract text available
    Text: Preliminary M53620400DW0/DB0 M53620410DW0/DB0 DRAM MODULE M53620400DW0/DB0 & M53620410DW0/DB0 with Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5362040 1 0D is a 4Mx36bits Dynamic RAM


    Original     		PDF M53620400DW0/DB0 M53620410DW0/DB0 M53620400DW0/DB0 M53620410DW0/DB0 M5362040 4Mx36bits 24-pin 28-pin 72-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53620405BY0/BT0-C 4Byte 4Mx36 SIMM PDpin 4Mx16 & Quad CAS 4Mx4 base Revision 0.1 June 1998 DRAM MODULE M53620405BY0/BT0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP (access time from col. addr.) in AC CHARACTERISTICS.


    Original     		PDF M53620405BY0/BT0-C 4Mx36 4Mx16 M53620405BY0/BT0-C 4Mx36bits

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53620412DW0/DB0 M53620412DW0/DB0 with Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53620412D is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M53620412D


    Original     		PDF M53620412DW0/DB0 M53620412DW0/DB0 M53620412D 4Mx36bits M53620412D 24-pin 28-pin 72-pin M53620412DW0

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53620405CY0/CT0-C 4Byte 4Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53620405CY0/CT0-C DRAM MODULE


    Original     		PDF M53620405CY0/CT0-C 4Mx36 4Mx16 M53620405CY0/CT0-C 4Mx36bits

    c60 equivalent

    Abstract: dram 4mx4 kmm5364
    Text: DRAM MODULE M53620412CW0/CB0 M53620412CW0/CB0 with Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53620412C is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M53620412C


    Original     		PDF M53620412CW0/CB0 M53620412CW0/CB0 M53620412C 4Mx36bits M53620412C 24-pin 28-pin 72-pin M53620412CW0 c60 equivalent dram 4mx4 kmm5364

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53620805BY0/BT0-C 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.1 June 1998 DRAM MODULE M53620805BY0/BT0-C Revision History Version 0.0 (Sept. 1997) • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.


    Original     		PDF M53620805BY0/BT0-C 8Mx36 4Mx16 M53620805BY0/BT0-C 8Mx36bits

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53620805CY0/CT0-C 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53620805CY0/CT0-C DRAM MODULE


    Original     		PDF M53620805CY0/CT0-C 8Mx36 4Mx16 M53620805CY0/CT0-C 8Mx36bits

    Untitled

    Abstract: No abstract text available
    Text: Alpha Wire | 711 Lidgerwood Avenue, Elizabeth, NJ 07207 Tel: 1-800-52 ALPHA 25742 , Web: www.alphawire.com Customer Specification PART NO. M5362 Construction Diameters (In) 1) Component 1 4 X 1 COND a) Conductor 20 (7/28) AWG TC 0.038 b) Insulation 0.016" Wall, Nom. PVC


    Original     		PDF M5362 Cove000

    Untitled

    Abstract: No abstract text available
    Text: M53620400DW0/DB0 M53620410DW0/DB0 DRAM MODULE M53620400DW0/DB0 & M53620410DW0/DB0 with Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5362040 1 0D is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M5362040(1)0D


    Original     		PDF M53620400DW0/DB0 M53620410DW0/DB0 M53620410DW0/DB0 M5362040 4Mx36bits 24-pin 28-pin 72-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53620812CW0/CB0 M53620812CW0/CB0 with Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53620812C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M53620812C


    Original     		PDF M53620812CW0/CB0 M53620812CW0/CB0 M53620812C 8Mx36bits M53620812C 24-pin 28-pin 72-pin M53620812CW0

    Untitled

    Abstract: No abstract text available
    Text: M53620400CW0/CB0 M53620410CW0/CB0 DRAM MODULE M53620400CW0/CB0 & M53620410CW0/CB0 with Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5362040 1 0C is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M5362040(1)0C


    Original     		PDF M53620400CW0/CB0 M53620410CW0/CB0 M53620410CW0/CB0 M5362040 4Mx36bits 24-pin 28-pin 72-pin

    coaxial cable awm 1354

    Abstract: AWM 2498 M39024/11
    Text: Manhattan Electrical Cable Alpha Wire | www.alphawire.com | 1-800-52 ALPHA Specifications subject to change. For complete specifications and availability, visit www.alphawire.com. 141 Manhattan™ Electrical Cable Signal transmission made reliable A lpha Wire’s Manhattan


    Original     		PDF High13/2024 coaxial cable awm 1354 AWM 2498 M39024/11

    KMM536256C-8

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E » • 7^4145 KM M536256C/CG QQ1504Q 12 4 I SUGK DRAM MODULES 2 5 6 K X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance ranae: • • • • • • • tnAC •cac M536256C-7 70ns 20ns 130ns M536256C-8


    OCR Scan     		PDF QQ1504Q M536256C/CG KMM536256C-7 KMM536256C-8 130ns 150ns KMM536256C 20-pin 18-pin

    D01471

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b 4 E ]> • TTbMlME DDIMTOT 154 KM M536256W/WG SflfiK DRAM MODULES 256Kx36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The S am sung M536256W is a 256K b it x 36 Dynam­ ic RAM high d e n sity m em ory m odule. The Sam sung


    OCR Scan     		PDF M536256W/WG 256Kx36 KMM536256W M536256W 40-pin 72-pin 22fiF KMM536256W-7 130ns KMM536256W-8 D01471

    Untitled

    Abstract: No abstract text available
    Text: KM M536256C/CG DRAM MODULES 2 5 6 K X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Perform ance ranae: The S am sung M536256C is a 262,144 b it x 36 Dynamic RAM high density m em ory module. The Sam­ sung M536256C c o n s is t o f e ig h t CMOS 2 5 6 K x 4


    OCR Scan     		PDF M536256C/CG KMM536256C-7 KMM536256C-8 130ns 150ns KMM536256C 20-pin 18-pin 72-pin

    KM416C1200AJ

    Abstract: No abstract text available
    Text: DRAM MODULE KM M5362203AW/AWG KM M5362203AW/AWG Fast Page Mode 2Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM G EN ERA L D ESC RIPTIO N FEATURES The Sam sung M5362203AW is a 2M bit x 36 Dynam ic RAM high density m em ory module. The Samsung KM M 5362203AW consists of four CMOS


    OCR Scan     		PDF M5362203AW/AWG M5362203AW/AWG 2Mx36 1Mx16 KMM5362203AW 5362203AW 24-pin 72-pin 362203A KMM5362203AW KM416C1200AJ

    pico electronics transformers h5460

    Abstract: M-531 M-5359 J5600 E5140 M-5355 H-5415 J-5650 e5200 M5300
    Text: P IC O ’S Ultra-Miniature PULSE Transformers .n i!* # » no "/« MAX ” OIA MSERIES rB fO _ . 2 5 0 t 010 025 Plug-In 3 5 MAX DIA 14.9 MAX OlA) 16 .3 5 t r* 7/ M MAX 5.55 M AX)£ 035* (0 91 00 i.* 5 .2 5,4 «6.351 i '/ j iV * (38.1 + 6 .3 5 ) , I.so i t s


    OCR Scan     		PDF MIL-PRF-21038 100KHZ-17MHZ KHz-10 E-5183 E-5184 E-5185 E-5186 E-5187 E-5188 E-5189 pico electronics transformers h5460 M-531 M-5359 J5600 E5140 M-5355 H-5415 J-5650 e5200 M5300

    tb41

    Abstract: No abstract text available
    Text: DRAM MODULE M5362203AW/AWG M5362203AW/AWG Fast Page Mode 2Mx36 DRAM SIMM, 1K Ref, 5V, using 1Mx16 DRAM and 1Mx4 QCAS DRAM GENERAL DESCRIPTION FEATURES The Samsung M5362203AW is a 2M bit x 36 • Part Identification Dynam ic RAM high density m em ory module. The


    OCR Scan     		PDF KMM5362203AW/AWG KMM5362203AW/AWG 2Mx36 1Mx16 KMM5362203AW KMM5362203AW cycles/16 5362203AW tb41

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b 4E D • 7T b 4142 G a m b a s M5362000A1/A1G 41b ■ SMGK DRAM MODULES 2M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung M5362000A1 is a 2M bitsX36 Dynamic RAM high density memory module. The Samsung


    OCR Scan     		PDF KMM5362000A1/A1G KMM5362000A1 bitsX36 20-pin 72-pin 130ns 150ns

    KMM5362000

    Abstract: No abstract text available
    Text: M5362000B1/B1G DRAM MODULES 2 M X 3 6 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung M5362000B1 is a 2M bits x 36 Dynamic RAM high density memory module. The Samsung M5362000B1 consist of sixteen CMOS 1 Mx 4 bit DRAMs in 20-pin SOJ package and eight CMOS 1M x 1


    OCR Scan     		PDF KMM5362000B1/B1G KMM5362000B1-6 KMM5362000B1-7 KMM5362000B1-8 110ns 130ns 150ns KMM5362000B1 20-pin KMM5362000

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M5362203C2W/C2WG 2Mx36 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) ELECTRONICS DRAM MODULE M5362203C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from M5362203CW /CWG to M5362203C2W /C2W G caused by PCB revision .


    OCR Scan     		PDF KMM5362203C2W/C2WG 2Mx36 1MX16 KMM5362203CW KMM5362203C2W KMM5362203C2W/C2WG