Untitled
Abstract: No abstract text available
Text: MG50Q1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG50Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3 µs max @Inductive load Low saturation voltage : VCE (sat) = 3.6 V (max) Enhancement-mode
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MG50Q1ZS50
2-94D7A
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MG50Q1ZS50
Abstract: No abstract text available
Text: MG50Q1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG50Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm High input impedance High speed : tf = 0.3 µs Max @Inductive load Low saturation voltage : VCE (sat) = 3.6 V (Max) Enhancement-mode
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MG50Q1ZS50
MG50Q1ZS50
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MG50Q1ZS50
Abstract: No abstract text available
Text: MG50Q1ZS50 TOSHIBA GTR Module Silicon N Channel IGBT MG50Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3 µs max @Inductive load l Low saturation voltage : VCE (sat) = 3.6 V (max)
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MG50Q1ZS50
MG50Q1ZS50
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MG50Q1BS11
Abstract: TOSHIBA IGBT IC 7800 MG50Q1BS1 toshiba 7800 MG50Q1BS11 equivalent
Text: MG50Q1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG50Q1BS11 High Power Switching Applications Motor Control Applications Unit: mm Enhancement-mode The electrodes are isolated from case. Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33D2A Maximum Ratings Ta = 25°C
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MG50Q1BS11
2-33D2A
MG50Q1BS11
TOSHIBA IGBT
IC 7800
MG50Q1BS1
toshiba 7800
MG50Q1BS11 equivalent
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PDF
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MG50Q1BS11
Abstract: TOSHIBA IGBT
Text: MG50Q1BS11 TOSHIBA IGBT Module Silicon N Channel IGBT MG50Q1BS11 High Power Switching Applications Motor Control Applications l Enhancement-mode l The electrodes are isolated from case. Unit: mm Equivalent Circuit JEDEC ― JEITA ― TOSHIBA 2-33D2A Maximum Ratings Ta = 25°C
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MG50Q1BS11
2-33D2A
MG50Q1BS11
TOSHIBA IGBT
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GT30J322
Abstract: MP6750 MG200Q2YS40 MG100Q2YS42 MG75J2YS50 GT60M301 GT60N321 IGBT gt20d201 mg300j2ys50 MIG75Q7CSA0X
Text: [2] ຠ⚫ [ 2 ] ຠ⚫ 1. 600 V ࡕࠫࡘ࡞ ٨ ٨ ٨ ٨ ᓸ⚦ൻᛛⴚࠍዉߒߣ࠼ࡇࠬࠣࡦ࠴࠶ࠗࠬޔ㘻㔚ߣߩ࠻࠼ࠝࡈߩᡷༀࠍታߒ߹ߒߚޕ VCE sat = 2.1 V (typ.) tf = 0.2 µs (typ.) 㜞ᾲવዉߩ⓸ൻࠕ࡞ࡒ᧚ߩ⛘✼ၮ᧼ߩ↪ߦࠃࠅᾲᛶ᛫ߩૐᷫࠍታߒޔ㜞ା㗬ൻࠍ࿑ࠅ߹ߒߚޕ
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MG800J2YS50A)
MG300J1US51
MG400J1US51
MG50J2YS50
MG75J2YS50
MG100J2YS50
MG150J2YS50
MG200J2YS50
MG300J2YS50
MG100J7KS50
GT30J322
MP6750
MG200Q2YS40
MG100Q2YS42
GT60M301
GT60N321
IGBT gt20d201
mg300j2ys50
MIG75Q7CSA0X
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PDF
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2SA1930 2sc5171
Abstract: tpc8107 equivalent TPC8107 application circuit 2SC4157 equivalent 2sa1930 transistor equivalent 2SA949 equivalent 2sd880 equivalent equivalent 2SC5200 2SK2865 Equivalent marking 4d npn
Text: Power Transistors Power Transistors z 218 Power Amps z 224 POWER-MOLD transistors SC-63/64 z 225 PW-MINI Transisters (SC-62) z 226 TSM Transistors (Thinnest package in the world in SC-59 and SOT-23 class) z 227 Power Transistors for Switching Power Supply z 228
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SC-63/64)
SC-62)
SC-59
OT-23
2SA1483
2SC3803
2SA1426
2SA1204
2SA1734
2SA2065
2SA1930 2sc5171
tpc8107 equivalent
TPC8107 application circuit
2SC4157 equivalent
2sa1930 transistor equivalent
2SA949 equivalent
2sd880 equivalent
equivalent 2SC5200
2SK2865 Equivalent
marking 4d npn
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PDF
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Untitled
Abstract: No abstract text available
Text: T O S H IB A MG50Q1ZS50 MG50Q1ZS50 TO SHIBA GTR M O DU LE SILICON N C HANN EL IGBT Unit in mm HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS • • • • • High Input Impedance High Speed : tf = 0.3 jus Max. @Inductive Load Low Saturation Voltage
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OCR Scan
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MG50Q1ZS50
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PDF
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Untitled
Abstract: No abstract text available
Text: MG50Q1BS11 TOSHIBA MG 5 0 Q 1 BS 1 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance HighSpeed : tf=1.0,«s Max. Low Saturation Voltage : VQE(sat) = 2.7V (Max.) Enhancement-Mode
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OCR Scan
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MG50Q1BS11
120oltage.
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PDF
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MG50Q1ZS50
Abstract: No abstract text available
Text: TOSHIBA MG50Q1ZS50 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG50Q1 ZS50 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS High Input Impedance High Speed : tf = 0.3 /us Max. @Induetive Load Low Saturation Voltage • VCE (sat) = 3-6 v (Max.)
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OCR Scan
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MG50Q1ZS50
MG50Q1
2-94D7A
MG50Q1ZS50
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PDF
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MG50Q1BS1
Abstract: No abstract text available
Text: MG50Q1BS11 TOSHIBA TOSHIBA GTR M O D U LE SILICON N C HANN EL IGBT M R i n n i R ^ n Unit in mm HIGH POWER SW ITCHING APPLICATIONS. M O TO R CONTROL APPLICATIONS. High Input Impedance High Speed : tf=1.0/iS Max. Low Saturation Voltage : VQE(sat) = 2.7V (Max.)
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OCR Scan
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MG50Q1BS11
12TTER
MG50Q1BS1
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PDF
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Untitled
Abstract: No abstract text available
Text: MG50Q1BS11 TOSHIBA M G 5 0 Q 1 BS 1 1 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance HighSpeed : tf=1.0,«s Max. Low Saturation Voltage : VQE(sat) = 2.7V (Max.) Enhancement-Mode
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OCR Scan
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MG50Q1BS11
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PDF
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MG50Q1BS1
Abstract: No abstract text available
Text: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG50Q1BS1 Unit in mm High Power Switching Applications Motor Control Applications • High Input Impedance • High Speed: tf = 0.5jxs Max. • Low Saturation Voltage : VCE(sat) = 4.0V (Max.) • Enhancement-Mode
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OCR Scan
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MG50Q1BS1
PW04150796
MG50Q1BS1
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PDF
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MG50Q1BS1
Abstract: SAY 115v MG50Q1BS11
Text: TOSHIBA MG50Q1BS11 MG50Q1BS11 TO S H IB A G TR M O D U LE SILICO N N C H A N N EL IG 8 T Unit in mm HIGH P O W E R SW ITC H IN G A P P LIC A TIO N S . M O TO R C O N TR O L A P P LIC A TIO N S . High Input Impedance H ighspeed : tf= 1.0,ws Max. Low Saturation Voltage: VçE(say = 2.7V(Max.)
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OCR Scan
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MG50Q1BS11
2-33D1A
MG50Q1BS1
SAY 115v
MG50Q1BS11
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S5J53
Abstract: MIG30J103H 200J2 S5J25 mg7502ys MG150J1JS50 MIG100Q201H GT60M301 MIG30J103HB MP6753
Text: TOSHIBA [2 ] Introduction [ 2 ] Introduction 1. 600-V Third Generation IGBTs • • • M iniaturization technologies have improved the trade-off between switching speed and saturation voltage V qe (sat = 2-l v Ctyp.) tf = 0.2 pis (typ.). The therm al resistance has been cut for added reliability by using a high heat conduction
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OCR Scan
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200-V
400J101H
MG75J1BS11
MG25J1B511
MG50J1BS11
MG100J1BS11
MG150J1BS11
MG25Q1BS11
MG50Q1BS11
MG75Q1BS11
S5J53
MIG30J103H
200J2
S5J25
mg7502ys
MG150J1JS50
MIG100Q201H
GT60M301
MIG30J103HB
MP6753
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GT250101
Abstract: MG150J2YS40 MG75Q2YS11 MG400Q1US11 MG200Q1JS9 MG75J2YS40 MG50J6ES40 MG200Q2YS91 MG75J6ES40 mg100q2ys9
Text: Insulated ìate Bipolar Transistors (IG BTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a
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OCR Scan
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2-99A1A
2-99B1A
GT250101
MG150J2YS40
MG75Q2YS11
MG400Q1US11
MG200Q1JS9
MG75J2YS40
MG50J6ES40
MG200Q2YS91
MG75J6ES40
mg100q2ys9
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PDF
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j2y transistor
Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
Text: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi conductor is correct for your application, this brochure outlines maximum ratings,
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OCR Scan
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O220AB
O-126
j2y transistor
T15J10
MP4704
MG100M2CK1
2sb834
MP3103
MG50J6ES91
MP3002
mp4505
2sc497
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PDF
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MG50Q1BS11
Abstract: toshiba 7800 IC204 ic 7800
Text: TOSHIBA M G50Q 1BS11 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT M G 5 0 Q 1 BS1 1 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. High Input Impedance High Speed : tf= l.O^s Max. Low Saturation Voltage : V£E(sat) = 2.7V (Max.) Enhancement-Mode
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OCR Scan
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MG50Q1BS11
MG50Q1
2-33D1A
MG50Q1BS11
toshiba 7800
IC204
ic 7800
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PDF
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MG50Q6ES41
Abstract: MG8QES42 mg200q2ys11 MG75Q2YS1 MG100Q2YS42 MP6750 MG100Q2YS11 mg50j1bs11 MG300J1US1 GT15J101
Text: Suggested IGBTs For o-Phase Inverters Suggested IGBTs For 3-Phase Inverters Inverter 220 VAC Input Brake Section Inverter Section 440 VAC Input Brake Section Inverter Section f < 5 kHz f > 5 kHz 600 VAC Input Inverter HP (kW) (kVA) 1 0.75 1.5 GT15J101 MP6750
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OCR Scan
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GT15J101
MG25J1BS11
MG50J1BS11
MG50J1E1S11
MG75J1BS11
GT15Q101
GT25Q101
MG50Q6ES41
MG8QES42
mg200q2ys11
MG75Q2YS1
MG100Q2YS42
MP6750
MG100Q2YS11
MG300J1US1
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PDF
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MG50Q6es41
Abstract: MG8QES42 GT15J101 MG75Q2YS11 MG25Q6ES42 MG100Q2YS42 MG300Q1US41 MG300Q2YS MG50Q1BS1 MG150Q2YS1
Text: Suggested KìBTs For 3-Phase Inverters Suggested IGBTs For 3-Phase Inverters 220 V A C Input Inverter Brake Inverter Brake Section Section Section 440 VAC Input 600 VAC Input Inverter Section Inverter f < 5 kHz f > 5 kHz GT15Q101 MG8Q6ES42 MG8QES42 - MP6752
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OCR Scan
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GT15J101
MG25J1BS11
MG50J1BS11
MG75J1BS11
MP6750
MP6752
MG25J6ES40
MG50Q6es41
MG8QES42
MG75Q2YS11
MG25Q6ES42
MG100Q2YS42
MG300Q1US41
MG300Q2YS
MG50Q1BS1
MG150Q2YS1
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PDF
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MG200J2YS21
Abstract: MG30J6ES1 MG100J2YS91 MG400J1US11 MG75J2YS40 MG400Q1US11 MG100J6ES40 MG150J2YS40 mig25Q901 MG75J2YS45
Text: l IL A p p ro v iti I evi vs Key to devices not listed in Recognized Components Directory, 1993 Edition 'Approved since 2/12/93, may need early authorization letter for customers. Toshiba Part # Section # UL FILE # E 8 7 9 8 9 MG100J1BS11 MG100J2YS1 MG100J2YS9
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OCR Scan
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MG100J1BS11
MG100J2YS1
MG100J2YS9
MG100J2YS40
MG100J2YS91
MG100J6ES1
MG100J6ES40
MG100J6ES45
MG100J6ES91
MG100M2YK1
MG200J2YS21
MG30J6ES1
MG400J1US11
MG75J2YS40
MG400Q1US11
MG150J2YS40
mig25Q901
MG75J2YS45
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PDF
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MG150N2YS40
Abstract: MG100J2YS45 mg75j2ys40 MG150J2YS40 MG15N6ES42 MG100G2YS1 mg75n2ys40 mg25n2ys40 MG200J2YS40 MG50J6ES40
Text: Connection Maximum Bating VCES V ICÌAÌ 8 15 25 G T15J101* eoo G T8J101* G T8J102(SM )* G T15J102* GT15J103(SMJ* 50 75 G T60J101* <60A) G T 80J101* GT50J1Û2+ (80A) M G 50 J1B S 1 1 MG75J1SB11 100 150 200 300 400 500 G T50J101* Q T25J101* MG25J1BS11 MG100J1BS11 MG150J1BS11
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OCR Scan
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T8J101*
T8J102
T15J101*
T15J102*
GT15J103
T25J101*
MG25J1BS11
T50J101*
T60J101*
80J101*
MG150N2YS40
MG100J2YS45
mg75j2ys40
MG150J2YS40
MG15N6ES42
MG100G2YS1
mg75n2ys40
mg25n2ys40
MG200J2YS40
MG50J6ES40
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PDF
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MG75J2YS40
Abstract: MG100J2YS45 MG50J2YS45 MG150J2YS45 MG300Q1US MG400Q1US11 MG400J2YS40 MG150J2YS40 MG200Q2YS1 MG200J2YS45
Text: Insulated Gate Bipolar Transistors IGBTs Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba’s 2nd Generation in 1989, IGBTs were made available in High Speed and Low Saturation types for both a 600V and a
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OCR Scan
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2-109C1A
MG50J6ES50
MG75J6ES50
2-94A2A
MG100J6ES50
MG50Q6ES11
MIG150J201H
MIG200J201H
MIG75Q201H
MIG100Q201H
MG75J2YS40
MG100J2YS45
MG50J2YS45
MG150J2YS45
MG300Q1US
MG400Q1US11
MG400J2YS40
MG150J2YS40
MG200Q2YS1
MG200J2YS45
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PDF
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MG75J2YS40
Abstract: MG200J2YS45 MG50J6ES40 MG150J2YS40 MG200J2YS40 MG100j2YS40 20L6P44 MG150J2YS45 MG100J6ES40 10L6P44
Text: UL Approved Devices Key to devices not listed in Recognized Components Directory, 1993 Edition ‘ Approved since 2/12/93, may need early authorization letter for customers. Toshiba Part # Secti UL FILE #E87989 MG100J1BS11 MG100J2YS1 MG100J2YS9 MG100J2YS40
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OCR Scan
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E87989
MG100J1BS11
MG100J2YS1
MG100J2YS9
MG100J2YS40
MG100J2YS91
MG100J6ES1
MG100J6ES40
MG100J6ES45
MG100J6ES91
MG75J2YS40
MG200J2YS45
MG50J6ES40
MG150J2YS40
MG200J2YS40
20L6P44
MG150J2YS45
10L6P44
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PDF
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