MGF0917A
Abstract: gp 801 pt 11400
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0917A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=24dBm TYP. @f=1.9GHz,Pin=4dBm
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MGF0917A
MGF0917A
24dBm
50pcs)
gp 801
pt 11400
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MGF0917A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0917A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=24dBm TYP. @f=1.9GHz,Pin=4dBm
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MGF0917A
MGF0917A
24dBm
50pcs)
June/2004
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gm 4511
Abstract: GP 841 Diode MGF0917A scl 1444
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> Preliminary MGF0917A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=24dBm TYP. @f=1.9GHz,Pin=4dBm
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PDF
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MGF0917A
MGF0917A
24dBm
gm 4511
GP 841 Diode
scl 1444
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Untitled
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0917A L & S BAND / 0.25W SMD non - matched DESCRIPTION The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=24dBm(TYP.) @f=1.9GHz,Pin=4dBm
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MGF0917A
MGF0917A
24dBm
50pcs)
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GP 841 Diode
Abstract: 4511 gm GG SMD MGF0917A K 3561 fet 2255
Text: MITSUBISHI SEMICONDUCTOR<GaAs FET> MGF0917A L & S BAND GaAs FET [ SMD non – matched ] DESCRIPTION The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=24dBm TYP. @f=1.9GHz,Pin=4dBm
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PDF
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MGF0917A
MGF0917A
24dBm
GP 841 Diode
4511 gm
GG SMD
K 3561
fet 2255
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Untitled
Abstract: No abstract text available
Text: < High-power GaAs FET small signal gain stage > MGF0917A L & S BAND / 0.25W SMD non - matched DESCRIPTION The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES • High output power Po=24dBm(TYP.) @f=1.9GHz,Pin=4dBm
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MGF0917A
MGF0917A
24dBm
50pcs)
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MGF4919G
Abstract: SP*02N60 SPP11N80 to-220 smd MGF1601 SPW47N60 MGF0905A SPW11N80 SPP11N60 SPP20N60
Text: МИКРОСХЕМЫ ТРАНЗИСТОРЫ 1 2 ВЫСОКОВОЛЬТНЫЕ ПОЛЕВЫЕ ТРАНЗИСТОРЫ CoolMOS CoolMOS полевые транзисторы Infineon – это новое поколение высоковольтных силовых транзисторов со сверхнизким сопротивлением в открытом состоянии
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SPP02N60
SPP03N60
SPP04N60
SPP07N60
SPP11N60
SPP20N60
SPW11N60
SPW20N60
SPW47N60
SPP02N80
MGF4919G
SP*02N60
SPP11N80
to-220 smd
MGF1601
SPW47N60
MGF0905A
SPW11N80
SPP11N60
SPP20N60
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C42V5964
Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION
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M6STA-005VA/WA/SA
MF-156STA-006VA/WA/SA
MF-156SRA-002VA/WA/SA
MF-622STA-004VA/WA/SA
MF-622STA-005VA/WA/SA
MF-622STA-006VA/WA/SA
MF-622SRA-002VA/WA/SA
MF-2500STA-002VA/WA,
003VA/WA,
004VA/WA
C42V5964
MGF1302 TRANSISTOR
MGF1601
MGFC1402
M57721
M67760LC
H2 MARKING SOT-89 mmIC
2SC5125
MITSUBISHI M57710-A
M68776
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4511 gm
Abstract: MGF0917A
Text: MITSUBISHI SEMICONDUCTOFkGaAs FET> Preliminary MGF0917A L & S BAND G a As FET [ S M D non - matched ] DESCRIPTION The MGF0917A GaAs FET with an N-channel schottky Gate, is designed for use UHF band amplifiers. FEATURES High output power Po=24dBm TYP. @ f=1.9GHz,Pin=4dBm
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MGF0917A
MGF0917A
24dBm
4511 gm
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