ML200D Search Results

ML200D Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: ML200D Series Ultra-Miniature, 2W Dual Output SMT DC/DC Converters Electrical Specifications Specifications typical @ +25°C, nominal input voltage & rated output current, unless otherwise noted. Specifications subject to change without notice. Input Key Features:	Original	ML200D	PDF
Untitled Abstract: No abstract text available Text: FH1 High Dynamic Range FET Product Features • • • • • • • 50 – 4000 MHz Low Noise Figure 18 dB Gain +42 dBm OIP3 +21 dBm P1dB Single or Dual Supply Operation Lead-free/Green/RoHS-compliant SOT-89 Package • MTTF > 100 years Applications •	Original	OT-89 1-800-WJ1-4401	PDF
Untitled Abstract: No abstract text available Text: Preliminary SPB-2026Z Product Description 1.7-2.2GHz 2W InGaP Amplifier Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is	Original	SPB-2026Z SPB-2026Z 10mil EDS-105436	PDF
Untitled Abstract: No abstract text available Text: Preliminary SPB-2026Z Product Description 1.7-2.2GHz 2W InGaP Amplifier Sirenza Microdevices’ SPB-2026Z is a high linearity single-stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a surface-mountable plastic encapsulated package. This HBT amplifier is	Original	SPB-2026Z SPB-2026Z 10mil EDS-105436	PDF
RF transistors with s-parameters Abstract: high power FET transistor s-parameters c4 sot-89 4C922 LL1608-FH3N3S FP1189-PCB-900 Text: FP1189 The Communications Edge TM Preliminary Product Information ½ Watt HFET Product Features • 50 – 4000 MHz • Up to +27 dBm P1dB • Up to +40 dBm Output IP3 • High Drain Efficiency • 19 dB Gain @ 900 MHz • MTBF >100 Years • SOT-89 SMT Package	Original	FP1189 OT-89 FP1189 1-800-WJ1-4401 RF transistors with s-parameters high power FET transistor s-parameters c4 sot-89 4C922 LL1608-FH3N3S FP1189-PCB-900	PDF
ML200D Abstract: ACPF-7003 ACPF-7003-BLK ACPF-7003-TR1 RG200D Sn42Bi58 Text: Agilent ACPF-7003 High Rx and Image Rejection Tx Filter for US PCS Band Data Sheet Features • High rejection from a single filter with no switches required • True split band replacement General Description The ACPF-7003 is a high rejection full band transmit	Original	ACPF-7003 ACPF-7003 ACPF-7003-TR1 5989-1791EN 5989-3923EN ML200D ACPF-7003-BLK ACPF-7003-TR1 RG200D Sn42Bi58	PDF
FH1G Abstract: JESD22-A114 FH1-G Text: FH1 High Dynamic Range FET Product Features x x x x x x x 50 – 4000 MHz Low Noise Figure 18 dB Gain +42 dBm OIP3 +21 dBm P1dB Single or Dual Supply Operation Lead-free/Green/RoHS-compliant SOT-89 Package x MTTF > 100 years Applications x x x x Mobile Infrastructure	Original	OT-89 1-800-WJ1-4401 FH1G JESD22-A114 FH1-G	PDF
FP1189-G Abstract: FP11G FP1189 FP1189-PCB1900S FP1189-PCB2140S FP1189-PCB900S marking c7 sot-89 Text: FP1189 The Communications Edge TM Product Information ½-Watt HFET Product Features Product Description Functional Diagram 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package	Original	FP1189 OT-89 FP1189 1-800-WJ1-4401 FP1189-G FP11G FP1189-PCB1900S FP1189-PCB2140S FP1189-PCB900S marking c7 sot-89	PDF
Sn43Pb43Bi14 Abstract: Sn95Sb5 GETEK Sn42Bi58 ACPF-7002 ML200D RG200D Sn95.8Ag3.5Cu0.7 Sn91 Text: Agilent ACPF-7002 High Rejection Tx Filter for US PCS Band Data Sheet General Description Features • High rejection from a single filter With no switches required. • Passband: 1850-1910 MHz 33 dB min Attenuation, 1930-1990 MHz 2.5 dB Typical Insertion Loss	Original	ACPF-7002 100pcs 3000pcs 5989-0380EN Sn43Pb43Bi14 Sn95Sb5 GETEK Sn42Bi58 ACPF-7002 ML200D RG200D Sn95.8Ag3.5Cu0.7 Sn91	PDF
ATF-501P8 Abstract: R8121 LL1608-FS47NJ 0402CG189C9B200 BCV62B ML200D 350LFM Text: ATF-501P8 1900MHz High Linearity Amplifier Application Note 5021 Description Avago Technologies ATF-501P8 is an enhancement mode PHEMT designed for high linearity and medium power applications. With an OIP3 of 45dBm and a noise figure of 1.7dB, ATF-501P8 is well suited as a base station transmit	Original	ATF-501P8 1900MHz ATF-501P8 45dBm com/pdf/AN-0002 ATF-501P8. 5989-0241EN R8121 LL1608-FS47NJ 0402CG189C9B200 BCV62B ML200D 350LFM	PDF
fp21g Abstract: fp21-g FP2189-G sot89 Marking code fp21g Text: FP2189 1-Watt HFET Product Features • • • • • • Product Description 50 – 4000 MHz +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz Lead-free/Green/RoHS-compliant SOT-89 Package • MTTF >100 Years Applications •	Original	FP2189 OT-89 FP2189 1-800-WJ1-4401 fp21g fp21-g FP2189-G sot89 Marking code fp21g	PDF
FP11G Abstract: TRANSISTOR BC 158 pnp WJ transistor bc 206 transistor bc 3843 Text: FP1189 ½-Watt HFET Product Features • • • • • • 50 – 4000 MHz +27 dBm P1dB +40 dBm Output IP3 High Drain Efficiency 20.5 dB Gain @ 900 MHz Lead-free/Green/RoHScompliant SOT-89 Package • MTTF >100 Years Functional Diagram The FP1189 is a high performance ½-Watt HFET	Original	FP1189 OT-89 FP1189 1-800-WJ1-4401 FP11G TRANSISTOR BC 158 pnp WJ transistor bc 206 transistor bc 3843	PDF
Untitled Abstract: No abstract text available Text: FH101 The Communications Edge TM Product Information High Dynamic Range FET Product Features x x x x x x 50 – 3000 MHz Low Noise Figure 18 dB Gain +36 dBm OIP3 +18 dBm P1dB Single or Dual Supply Operation x Lead-free/Green/RoHS-compliant SOT-89 Package x MTTF > 100 years	Original	FH101 FH101 OT-89 1-800-WJ1-4401	PDF
power supply 1000 watt Abstract: No abstract text available Text: FP1189 The Communications Edge TM ½-Watt HFET Advanced Product Information Product Features • 50 – 4000 MHz • Up to +27 dBm P1dB • Up to +40 dBm Output IP3 • High Drain Efficiency • 19 dB Gain @ 900 MHz • MTTF >100 Years Product Description	Original	FP1189 OT-89 FP1189 1-800-WJ1-4401 power supply 1000 watt	PDF

FP21G Abstract: MARKING CODE 51 5 fet sot-89 FP2189 FP2189-G FP2189G MARKING CODE SOT-89 FP2189-PCB1900S FP2189-PCB2140S FP2189-PCB900S marking c7 sot-89 Text: FP2189 1 - Watt HFET Product Information Product Features Product Description Functional Diagram 50 – 4000 MHz +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz The FP2189 is a high performance 1-Watt HFET Heterostructure FET in a low-cost SOT-89 surfacemount package. This device works optimally at a drain	Original	FP2189 FP2189 OT-89 WJ1-4401 FP21G MARKING CODE 51 5 fet sot-89 FP2189-G FP2189G MARKING CODE SOT-89 FP2189-PCB1900S FP2189-PCB2140S FP2189-PCB900S marking c7 sot-89	PDF
ML200D Abstract: 64DPCH SOF-26 TAJA105K020R MCH185A100JK l1303 spa152 MCH185A101JK Text: Preliminary SPA-1526Z Product Description Sirenza Microdevices’ SPA-1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor HBT amplifier housed in a surfacemountable plastic encapsulated package. This HBT amplifier is made with	Original	SPA-1526Z SPA-1526Z co105847 SPA-1526Z-EVB1 910MHz SPA-1526Z-EVB2 1960MHz SPA-1526Z-EVB3 ML200D 64DPCH SOF-26 TAJA105K020R MCH185A100JK l1303 spa152 MCH185A101JK	PDF
FET FH1G Abstract: No abstract text available Text: FH1 High Dynamic Range FET Product Features 50 – 4000 MHz Low Noise Figure 18 dB Gain +42 dBm OIP3 +21 dBm P1dB Single or Dual Supply Operation Lead-free/Green/RoHS-compliant SOT-89 Package • MTTF > 100 years • • • • • • • Applications •	Original	OT-89 FET FH1G	PDF
Untitled Abstract: No abstract text available Text: FH101 High Dynamic Range FET Product Features • • • • • • • • 50 – 4000 MHz 18 dB Gain +18 dBm P1dB +36 dBm OIP3 Low Noise Figure Single or Dual Supply Operation MTTF > 100 years Lead free/green/RoHS-compliant SOT-89 Package Applications	Original	FH101 OT-89 FH101	PDF
LL1608-FS47NJ Abstract: GSM450 ATF-501P8 ATF-54143 application notes 250R07C120JV4 BCV62B CDMA450 ML200D LL1005-FH18NJ 350LFM Text: ATF-501P8 450 MHz High Linearity Amplifier Application Note 5058 ATF-501P8 Applications Information Description Avago Technologies ATF- 501P8 is an enhancement mode PHEMT designed for high linearity and medium power applications. This application note covers	Original	ATF-501P8 ATF-501P8 501P8 pdf/AN-0002 5989-0923EN LL1608-FS47NJ GSM450 ATF-54143 application notes 250R07C120JV4 BCV62B CDMA450 ML200D LL1005-FH18NJ 350LFM	PDF
fp21g Abstract: fp21-g MARKING CODE 51 5 fet sot-89 fp-21g FP2189 FP2189-G FP2189-PCB1900S FP2189-PCB2140S FP2189-PCB900S marking code transistor ROHM Text: FP2189 1-Watt HFET Product Features • • • • • • Product Description 50 – 4000 MHz +30 dBm P1dB +43 dBm Output IP3 High Drain Efficiency 18.5 dB Gain @ 900 MHz Lead-free/Green/RoHS-compliant SOT-89 Package • MTTF >100 Years Applications •	Original	FP2189 OT-89 FP2189 1-800-WJ1-4401 fp21g fp21-g MARKING CODE 51 5 fet sot-89 fp-21g FP2189-G FP2189-PCB1900S FP2189-PCB2140S FP2189-PCB900S marking code transistor ROHM	PDF
FH1G Abstract: No abstract text available Text: FH1 High Dynamic Range FET Product Features • • • • • • • 50 – 4000 MHz Low Noise Figure 18 dB Gain +42 dBm OIP3 +21 dBm P1dB Single or Dual Supply Operation Lead-free/Green/RoHS-compliant SOT-89 Package • MTTF > 100 years Applications •	Original	OT-89 1-800-WJ1-4401 FH1G	PDF
C18pF Abstract: Fp2189 Text: FP2189 The Communications Edge TM 1-Watt HFET Product Information Product Description Functional Diagram The FP2189 is a high performance 1-Watt HFET Heterostructure FET in a low-cost SOT-89 surfacemount package. This device works optimally at a drain bias of +8 V and 250 mA to achieve +43 dBm	Original	FP2189 OT-89 FP2189 1-800-WJ1-4401 C18pF	PDF
Untitled Abstract: No abstract text available Text: FH101 The Communications Edge TM High Dynamic Range FET Product Features • • • • • • • 50 – 3000 MHz Low Noise Figure 18 dB Gain +36 dBm OIP3 +18 dBm P1dB Single or Dual Supply Operation Lead-free/Green/RoHS-compliant SOT-89 Package • MTTF > 100 years	Original	FH101 FH101 OT-89 1-800-WJ1-4401	PDF
transistor 4287 AB Abstract: ML200DSS k 3116 transistor fet Rohm part marking Z7 Fp2189 Text: FP2189 The Communications Edge TM 1-Watt HFET Advanced Product Information Product Features • 50 – 4000 MHz • Up to +31 dBm P1dB • Up to +45 dBm Output IP3 • High Drain Efficiency • 19 dB Gain @ 900 MHz • MTTF >100 Years Product Description Functional Diagram	Original	FP2189 OT-89 FP2189 1-800-WJ1-4401 transistor 4287 AB ML200DSS k 3116 transistor fet Rohm part marking Z7	PDF

ML200D Search Results

ML200D Datasheets Context Search

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RF transistors with s-parameters

ML200D

FH1G

FP1189-G

Sn43Pb43Bi14

ATF-501P8

fp21g

FP11G

Untitled

power supply 1000 watt

FP21G

ML200D

FET FH1G

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LL1608-FS47NJ

fp21g

FH1G

C18pF

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transistor 4287 AB