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    OKI Electric Industry Co Ltd MSM548512L80GS

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    MSM548512 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MSM548512L OKI Electronic Components 524,288-Word x 8-Bit High-Speed PSRAM Original PDF
    MSM548512L-10GS-K OKI Semiconductor 524,288 Word x 8 Bit High-Speed PSRAM Original PDF
    MSM548512L-10RS OKI Electronic Components 524,288-Word x 8-Bit High-Speed PSRAM Original PDF
    MSM548512L-12RS OKI Electronic Components 524,288-Word x 8-Bit High-Speed PSRAM Original PDF
    MSM548512L-80RS OKI Electronic Components 524,288-Word x 8-Bit High-Speed PSRAM Original PDF

    MSM548512 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MSM548512L

    Abstract: MSM548512L-10GS-K MSM548512L-10RS MSM548512L-12RS MSM548512L-80RS
    Text: E2L0044-17-Y1 ¡ Semiconductor MSM548512L ¡ Semiconductor This version: Jan. 1998 MSM548512L Previous version: Dec. 1996 524,288-Word ¥ 8-Bit High-Speed PSRAM DESCRIPTION The MSM548512L is fabricated using OKI’s CMOS silicon gate process technology. This process,


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    PDF E2L0044-17-Y1 MSM548512L 288-Word MSM548512L OP32-P-525-1 MSM548512L-10GS-K MSM548512L-10RS MSM548512L-12RS MSM548512L-80RS

    a6628

    Abstract: SOP-112 DIP32 MSM548512L DIP32P
    Text: J2L0044-17-Y1 作成:1998年 1月 MSM548512L l 前回作成:1997年 9月 ¡ 電子デバイス MSM548512L 524,288-Wordx8-Bit PSRAM n 概要 プロセスを


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    PDF J2L0044-17-Y1 MSM548512L MSM548512L 288-Word MSM548512L2048 84MSRAMCMOS 250mW 500mW 160ns a6628 SOP-112 DIP32 DIP32P

    a6628

    Abstract: A-6628 cewe DIP32 MSM548512L
    Text: お客様各位 資料中の「沖電気」「OKI」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株


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    PDF J2L0044-17-Y1 MSM548512L MSM548512L 288-Word MSM548512L2048 84MSRAMCMOS 250mW 500mW 160ns a6628 A-6628 cewe DIP32

    MSM548512L-10GS-K

    Abstract: MSM548512L-10RS MSM548512L-12RS MSM548512L-80RS MSM548512L
    Text: Dear customers, About the change in the name such as "Oki Electric Industry Co. Ltd." and "OKI" in documents to OKI Semiconductor Co., Ltd. The semiconductor business of Oki Electric Industry Co., Ltd. was succeeded to OKI Semiconductor Co., Ltd. on October 1, 2008.


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    PDF MSM548512L OP32-P-525-1 MSM548512L-10GS-K MSM548512L-10RS MSM548512L-12RS MSM548512L-80RS MSM548512L

    MSM5205RS

    Abstract: ML60852TB MSM6388GS ML60852ATB MSM6258VJS asm 1442 MSC7154 MSM5218RS asm 1441 Asm 1440
    Text: No. 138 144 3411 3413 3414 3415 3419 10681 10956 11042 11307 11308 11309 11696 11697 11698 11701 11906 11907 12207 12208 12209 12210 12756 12758 12759 12761 12765 12770 12772 12805 12808 12814 12815 12832 12835 12837 12846 12847 13924 14267 14500 14503 14507


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    PDF ML60851BGA ML60852TB MSM5052-01 MSM5052-02 MSM5052-10 MSC1157 MSC1157MS-K MSC1157MS-KR1 MSM5205RS ML60852TB MSM6388GS ML60852ATB MSM6258VJS asm 1442 MSC7154 MSM5218RS asm 1441 Asm 1440

    MSM6389B

    Abstract: dram MSM6720 MSM65917 MSM514800CP MD56V62160 MS8104160 MSM41464 msm5412222b msm6591
    Text: Discontinuation Products List P/N MD56V62160 Replacement if any Category P/N Replacement (if any) Category MD56V62160E (under DRAM develop) MSM514223B P/N Replacement (if any)Category ASM MSM51C2800 DRAM ASM MSM51C2800 DRAM ASM MSM51C4256 DRAM ML62882A MCU


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    PDF MD56V62160 MD56V62160E MSM514223B MSM51C2800 MSM51C4256 ML62882A MSM51 4223C ML62886 MSM6389B dram MSM6720 MSM65917 MSM514800CP MD56V62160 MS8104160 MSM41464 msm5412222b msm6591

    asm 1442

    Abstract: MSM6388GS MSM6376GS-BK ML60852ATB MSM6322GS MSM5205RS MSM65P516-NGS-1K MSM6376-GS-BK MSM6376GSBK ML60852TB
    Text: No. 138 144 3411 3413 3414 3415 3419 10681 10956 11042 11307 11308 11309 11696 11697 11698 11701 11906 11907 12207 12208 12209 12210 12756 12758 12759 12761 12765 12770 12772 12805 12808 12814 12815 12832 12835 12837 12846 12847 13924 14267 14500 14503 14507


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    PDF ML60851BGA ML60852TB MSM5052-01 MSM5052-02 MSM5052-10 MSM60801TS-K MSM60851TB MSM631dard asm 1442 MSM6388GS MSM6376GS-BK ML60852ATB MSM6322GS MSM5205RS MSM65P516-NGS-1K MSM6376-GS-BK MSM6376GSBK ML60852TB

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM548512L 524,288-W ord x 8-B it H igh-Speed PSR A M DESCRIPTION The MSM548512L is fabricated using OKI's CMOS silicon gate process technology. This process, coupled with single-transister memory storage cells, permits maximum circuit density, minimum


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    PDF MSM548512L MSM548512L A0-A18 MSM5485121-

    80n70

    Abstract: No abstract text available
    Text: O K I semiconductor MSM548512 524,288-Word x 8-Bit HIGH-SPEED PSRAM GENERAL DESCRIPTION The MSM548512 is a 4 Mbit, high-speed, and iow-power CMOS Pseudo Static RAM organized as 524,288 words x 8 bits. The MSM548512 is fabricated using OKI’s CMOS silicon gate process technology. This process,


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    PDF MSM548512 288-Word MSM548512 cycles/32ms. A0-A18 80n70

    MARK W1 TSOP

    Abstract: weight of SOP 16 package MSM548332 weight of SOP package
    Text: O K I Semiconductor Packaging Multiport DRAM Products Packaging OKU Semiconductor Packaging Field Memory Products Package Name MSM514212 No. of Pins zs GS TS TS JS DIP ZIP SOP TSOP Typen TQFP SOJ O 28 r '\ 16 MSM514221B RS r o 20 O 26/20 o 16 MSM514222B o


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    PDF MSM514212 MSM514221B MSM514222B MSM514223B MSM518221 MSM518222 MSM5412222 MSM548333 MSM548332 MSM548331 MARK W1 TSOP weight of SOP 16 package weight of SOP package

    TC55B8128

    Abstract: KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256
    Text: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 2 56 K 1M Org. x1 Toshiba F Page T C 51256 N ib b le K M 4 1C 2 5 7 T C 51257 H ita ch i H M 51 2 5 6 — F u jitsu M B 8 12 5 6 M B 8 12 5 7 NEC /P D 41256 — Oki M S M 5 1C 2 5 6


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    PDF TC511001 TC514101 514170B 514280B TC5316200P KM2X16100 KM23C16000G KM23C16100G KM23C16000FP KM23C16100FP TC55B8128 KM23C4000AG TC534000AF HN62308BP TC551632 hitachi cross mb83 68512U HITACHI 64k DRAM TC55B4256

    SAM25

    Abstract: m5412222 Sam 44
    Text: O K I Semiconductor Product Overview Product Overview MSM54C864 r| 512K j— I 64K x 8 MSM54C865 r I MSM514252A I 256K x 4 h i-L— H MSM514262 D O ' H MSM518121A~ H 128K x 8 hi 1MSM518122 Multiport | I MSM548262 256K x 8 h{ 2M I MSM548263


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    PDF MSM54C864 MSM54C865 MSM514252A MSM514262 MSM518121A~ 1MSM518122 MSM548262 MSM548263 MSM5416262" MSM5416263 SAM25 m5412222 Sam 44

    Untitled

    Abstract: No abstract text available
    Text: O K I semiconductor M S M 548512 524,288-Word x 8-Bit HIGH-SPEED PSRAM GENERAL DESCRIPTION The M SM 548512 is a 4 Mbit, high-speed, and iow -pow er CM O S Pseudo Static RAM organized as 524,288 w ords x 8 bits. The M SM 548512 is fabricated using O K I’s CM O S silicon gate process technology. T his process,


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    PDF 288-Word cycles/32ms. MSM548512 MSM548512 A0-A18