Untitled
Abstract: No abstract text available
Text: MT6L62AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L62AE VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application Unit: mm Mounted Devices Three pin SSM type part No. Q1 Q2 MT3S07S MT3S03AS Absolute Maximum Ratings Ta = 25°C
|
Original
|
PDF
|
MT6L62AE
MT3S07S
MT3S03AS
|
MT3S03AS
Abstract: No abstract text available
Text: MT3S03AS 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S03AS ○ VHF~UHF 帯低電圧動作•低位相雑音タイプ • 雑音特性が優れています。: NF = 1.4dB, |S21e |2 単位: mm = 8dB f = 2 GHz 絶対最大定格 (Ta = 25°C)
|
Original
|
PDF
|
MT3S03AS
MT3S03AS
|
MT3S03AS
Abstract: No abstract text available
Text: MT3S03AS Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AS VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: Gain = 8dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C)
|
Original
|
PDF
|
MT3S03AS
MT3S03AS
|
MT3S03AS
Abstract: No abstract text available
Text: MT3S03AS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AS VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: Gain = 8dB (f = 2 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics
|
Original
|
PDF
|
MT3S03AS
MT3S03AS
|
MT3S03AS
Abstract: No abstract text available
Text: MT3S03AS Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S03AS VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.4dB f = 2 GHz • High gain: Gain = 8dB (f = 2 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics
|
Original
|
PDF
|
MT3S03AS
MT3S03AS
|
Untitled
Abstract: No abstract text available
Text: MT6L03AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L03AT VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Two devices are built in to the super-thin and ultra super mini 6 pins package: TU6 Mounted Devices Q1/Q2: SSM (TESM) Three-pins (SSM/TESM) mold products are
|
Original
|
PDF
|
MT6L03AT
MT3S03AS
MT3S03AT)
|
Untitled
Abstract: No abstract text available
Text: MT6L52AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L52AE VHF~UHF Band Low Noise Amplifier Applications • Unit: mm Two devices are built in to the super-thin and extreme super mini 6 pins package: ES6 Mounted Devices Three-pins (SSM/TESM) mold
|
Original
|
PDF
|
MT6L52AE
MT3S03AS
MT3S03AT)
MT3S04AS
MT3S04AT)
|
Untitled
Abstract: No abstract text available
Text: MT6L62AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L62AE VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application Unit: mm Absolute Maximum Ratings Ta = 25°C Characteristics Symbol Rating Q1 Q2 Unit Collector-base voltage
|
Original
|
PDF
|
MT6L62AE
|
Untitled
Abstract: No abstract text available
Text: MT6L03AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L03AE VHF~UHF Band Low Noise Amplifier Applications • Unit: mm Two devices are built in to the super-thin and extreme super mini 6 pins package: ES6 Mounted Devices Q1/Q2: SSM (TESM) Three-pins (SSM/TESM) mold products are
|
Original
|
PDF
|
MT6L03AE
MT3S03AS
MT3S03AT)
|
Untitled
Abstract: No abstract text available
Text: MT6C03AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6C03AE VHF~UHF Band Low Noise Amplifier Applications Unit: mm • Two devices are built in to the super-thin and extreme super mini 6 pins package: ES6 Mounted Devices Q1/Q2: SSM (TESM) Three-pins (SSM/TESM) mold products are
|
Original
|
PDF
|
MT6C03AE
MT3S03AS
MT3S03AT)
|
Untitled
Abstract: No abstract text available
Text: MT6L58AS Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L58AS VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the sES6 package, which is smaller and thinner than the super-thin and ultra-super mini 6-pin ES6
|
Original
|
PDF
|
MT6L58AS
MT3S06S
MT3S06T)
MT3S03AS
MT3S03AT)
|
Untitled
Abstract: No abstract text available
Text: MT6L58AS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type Preliminary MT6L58AS VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the sES6 package, which is smaller and thinner than the super-thin and ultra-super mini 6-pin ES6
|
Original
|
PDF
|
MT6L58AS
MT3S06S
MT3S06T)
MT3S03AS
MT3S03AT)
12ments,
|
Untitled
Abstract: No abstract text available
Text: MT6L62AS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type Preliminary MT6L62AS VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the sES6 package, which is smaller and thinner than the super-thin and ultra-super mini 6-pin ES6
|
Original
|
PDF
|
MT6L62AS
MT3S07S
MT3S03AS
|
Untitled
Abstract: No abstract text available
Text: MT6C03AS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6C03AS VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the sES6 package, which is smaller and thinner than the super-thin and ultra-super mini 6-pin ES6
|
Original
|
PDF
|
MT6C03AS
MT3S03AS
MT3S03AT)
|
|
|
MT3S03AS
Abstract: No abstract text available
Text: TO SH IBA MT3S03AS TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S03AS Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 8 dB f = 2 GHz 1.6 ± 0.2 ,0.8 ±0.1, r—
|
OCR Scan
|
PDF
|
MT3S03AS
000707EAA1
MT3S03AS
|
Untitled
Abstract: No abstract text available
Text: TO SH IBA MT3S03AS TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S03AS VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 8 dB f = 2 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
|
OCR Scan
|
PDF
|
MT3S03AS
000707EAA1
|
Untitled
Abstract: No abstract text available
Text: TO SH IBA MT3S03AS TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S03AS Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.4 dB High Gain : Gain = 8 dB f = 2 GHz MAXIMUM RATINGS (Ta = 25°C)
|
OCR Scan
|
PDF
|
MT3S03AS
|
Untitled
Abstract: No abstract text available
Text: TO SH IBA MT6C03AE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6C03AE Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and extreme super mini 6 pins package : ES6 MOUNTED DEVICES 5 B-
|
OCR Scan
|
PDF
|
MT6C03AE
MT3S03AS
MT3S03AT)
|
Untitled
Abstract: No abstract text available
Text: TOSHIBA MT6L58AE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L58AE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and extreme super mini 6 pins package : ES6 in in O O o o MOUNTED DEVICES
|
OCR Scan
|
PDF
|
MT6L58AE
MT3S06S
MT3S06T)
MT3S03AS
MT3S03AT)
|
Untitled
Abstract: No abstract text available
Text: TO SH IBA MT6C03AE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6C03AE Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and extreme super mini 6 pins package : ES6 MOUNTED DEVICES 5 B-
|
OCR Scan
|
PDF
|
MT6C03AE
MT3S03AS
MT3S03AT)
|
2SC5256
Abstract: MT3S03AS MT3S03AT MT6L51AE
Text: MT6L51AE TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L51 AE V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and extreme super mini 6 pins package : ES6 in O o MOUNTED DEVICES
|
OCR Scan
|
PDF
|
MT6L51AE
2SC5256
5256FT)
MT3S03AS
MT3S03AT)
2SC5256
MT3S03AS
MT3S03AT
MT6L51AE
|
MT3S03AS
Abstract: MT3S03AT MT3S04AS MT3S04AT MT6L52AE
Text: TOSHIBA MT6L52AE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L52AE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and extreme super mini 6 pins package : ES6 V in in in OO o 2 o o - F MOUNTED DEVICES
|
OCR Scan
|
PDF
|
MT6L52AE
MT3S03AS
MT3S03AT)
MT3S04AS
MT3S04AT)
MT3S03AS
MT3S03AT
MT3S04AS
MT3S04AT
MT6L52AE
|
MT3S03AS
Abstract: MT3S03AT MT6L03AT
Text: TO SH IBA MT6L03AT TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L03AT Unit in mm V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Two devices are built in to the super-thin and ultra super mini 6 pins package : TU6 2.1 ± 0.1 MOUNTED DEVICES
|
OCR Scan
|
PDF
|
MT6L03AT
MT3S03AS
MT3S03AT)
MT3S03AS
MT3S03AT
MT6L03AT
|
MT3S03AS
Abstract: MT3S03AT MT6C03AE
Text: TO SH IBA MT6C03AE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6C03AE Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Two devices are built in to the super-thin and extreme super mini 6 pins package : ES6 5 MOUNTED DEVICES B- Q1/Q2 : SSM (TESM)
|
OCR Scan
|
PDF
|
MT6C03AE
MT3S03AS
MT3S03AT)
MT3S03AS
MT3S03AT
MT6C03AE
|
