MT3S04AS
Abstract: MT3S04AT MT3S06S MT3S06T MT6L57AS high dc current gain transistor
Text: MT6L57AS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type Preliminary MT6L57AS VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application Mounted Devices Q1: SSM TESM Q2: SSM (TESM) MT3S06S (MT3S06T) Three pin (SSM/TESM) type part No.
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MT6L57AS
MT3S06S
MT3S06T)
MT3S04AS
MT3S04AT)
S21e2
MT3S04AS
MT3S04AT
MT3S06S
MT3S06T
MT6L57AS
high dc current gain transistor
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MT3S03AS
Abstract: MT3S03AT MT3S06S MT3S06T MT6L58AS
Text: MT6L58AS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type Preliminary MT6L58AS VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application Mounted Devices Q1: SSM TESM Q2: SSM (TESM) MT3S06S (MT3S06T) Three pin (SSM/TESM) type part No.
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MT6L58AS
MT3S06S
MT3S06T)
MT3S03AS
MT3S03AT)
S21e2
MT3S03AS
MT3S03AT
MT3S06S
MT3S06T
MT6L58AS
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MT3S06S
Abstract: No abstract text available
Text: MT3S06S 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S06S ○ VHF~UHF 帯低電圧動作•低雑音タイプ • 単位: mm 雑音特性が優れています。 : NF = 1.6dB VCE = 3 V, IC = 3 mA, f = 2 GHz : |S21e|2 = 9.5dB
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MT3S06S
MT3S06S
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MT3S06S
Abstract: No abstract text available
Text: MT3S06S TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S06S VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.6dB VCE = 3 V, IC = 3 mA, f = 2 GHz • High gain: |S21e|2 = 9.5dB (VCE = 3 V, IC = 7 mA, f = 2 GHz) Unit: mm
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MT3S06S
MT3S06S
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MT3S06S
Abstract: No abstract text available
Text: MT3S06S TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S06S VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.6dB VCE = 3 V, IC = 3 mA, f = 2 GHz • High gain: |S21e|2 = 9.5dB (VCE = 3 V, IC = 7 mA, f = 2 GHz) Unit: mm
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MT3S06S
MT3S06S
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MT3S06S
Abstract: No abstract text available
Text: MT3S06S TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S06S VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.6dB VCE = 3 V, IC = 3 mA, f = 2 GHz • High gain: |S21e|2 = 9.5dB (VCE = 3 V, IC = 7 mA, f = 2 GHz) Unit: mm
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MT3S06S
MT3S06S
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MT3S06S
Abstract: MT3S06T MT3S08T MT6L54E
Text: MT6L54E Silicon NPN Epitaxial Planar Type MT6L54E VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Tow devices re built in to the super-thin and ultra super mini 6 pin package: ES6 Three pin (SSM/TESM) type part No. Q1: SSM (TESM)
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MT6L54E
MT3S06S
MT3S06T)
MT3S08T
MT3S06S
MT3S06T
MT3S08T
MT6L54E
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MT3S04AS
Abstract: MT3S04AT MT3S06S MT3S06T MT6L57AE
Text: MT6L57AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L57AE VHF~UHF Band Low Noise Amplifier Applications • Unit: mm Two devices are built in to the super-thin and extreme super mini 6 pins package: ES6 Mounted Devices Q1: SSM (TESM) Three-pins (SSM/TESM) mold
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MT6L57AE
MT3S06S
MT3S04AS
MT3S06T)
MT3S04AT)
MT3S04AS
MT3S04AT
MT3S06S
MT3S06T
MT6L57AE
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Untitled
Abstract: No abstract text available
Text: MT6L57AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L57AE VHF~UHF Band Low Noise Amplifier Applications • Unit: mm Two devices are built in to the super-thin and extreme super mini 6 pins package: ES6 Mounted Devices Q1: SSM (TESM) Three-pins (SSM/TESM) mold
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MT6L57AE
MT3S06S
MT3S06T)
MT3S04AS
MT3S04AT)
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Untitled
Abstract: No abstract text available
Text: MT6L58AS Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L58AS VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the sES6 package, which is smaller and thinner than the super-thin and ultra-super mini 6-pin ES6
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MT6L58AS
MT3S06S
MT3S06T)
MT3S03AS
MT3S03AT)
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Untitled
Abstract: No abstract text available
Text: MT6L54S TOSHIBA Transistor Silicon NPN Epitaxial Planar Type Preliminary MT6L54S VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the sES6 package, which is smaller and thinner than the super-thin and ultra-super-mini 6-pin ES6
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MT6L54S
MT3S06S
MT3S06T)
MT3S08T
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Untitled
Abstract: No abstract text available
Text: MT6L58AS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type Preliminary MT6L58AS VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the sES6 package, which is smaller and thinner than the super-thin and ultra-super mini 6-pin ES6
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MT6L58AS
MT3S06S
MT3S06T)
MT3S03AS
MT3S03AT)
12ments,
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Untitled
Abstract: No abstract text available
Text: MT6L57AT TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L57AT VHF~UHF Band Low Noise Amplifier Applications • Unit: mm Two devices are built in to the super-thin and ultra super mini 6 pins package: TU6 Mounted Devices Q1: SSM (TESM) Three-pins (SSM/TESM) mold
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MT6L57AT
MT3S06S
MT3S06T)
MT3S04AS
MT3S04AT)
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TA4029CTC
Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
Text: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8
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BCJ0003G
BCJ0003F
TA4029CTC
TA4032FT
TB7602TU
MT4S300T
MT4S300U
MT4S301T
TA4029TU
SOT-24
MT4S300
RFM12U7X
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MT3S06S
Abstract: MT3S06T MT3S08T MT6L54E
Text: MT6L54E TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L54E VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Tow devices re built in to the super-thin and ultra super mini 6 pin package: ES6 Three pin (SSM/TESM) type part No.
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MT6L54E
MT3S06S
MT3S06T)
MT3S08T
MT3S06S
MT3S06T
MT3S08T
MT6L54E
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MT3S04AS
Abstract: MT3S04AT MT3S06S MT3S06T MT6L57AE
Text: MT6L57AE TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L57AE VHF~UHF Band Low Noise Amplifier Applications • Unit: mm Two devices are built in to the super-thin and extreme super mini 6 pins package: ES6 Mounted Devices Q1: SSM (TESM) Three-pins (SSM/TESM) mold
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MT6L57AE
MT3S06S
MT3S04AS
MT3S06T)
MT3S04AT)
MT3S04AS
MT3S04AT
MT3S06S
MT3S06T
MT6L57AE
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Untitled
Abstract: No abstract text available
Text: TO SHIBA MT3S06S TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S06S Unit in mm VHF—UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure : NF = 1.6 dB VCE = 3 V, IC = 3 mA, f = 2 GHz High Gain : |S2le|2 = 9-5 dB (VCE = 3V, IC = 7mA, f = 2 GHz)
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MT3S06S
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MT3S06S
Abstract: No abstract text available
Text: TO SH IBA MT3S06S TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S06S Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Low Noise Figure NF = 1.6 dB V C E = 3 V, In = 3 mA, f = 2 GHz TTicrh (T-ain IS o i J 2 = 1.6 ± 0.2 ,0.8 ±0.1, r— :— 1
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MT3S06S
MT3S06S
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MT3S06S TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S06S Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise Figure : NF = 1.6 dB VCE = 3 V, IC = 3 mA, f = 2 GHz High Gain : |S2i e|2 = 9.5 dB (VCE = 3 V, IC = 7 mA, f = 2 GHz)
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MT3S06S
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Untitled
Abstract: No abstract text available
Text: TO SH IBA MT6L59E TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L59E V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and ultra super mini 6 pins package : ES6 y m i M T c n n c x / ir c c
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MT6L59E
MT3S06S
MT3S06T)
MT3S07S
MT3S07T)
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MT6L58AE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L58AE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and extreme super mini 6 pins package : ES6 in in O O o o MOUNTED DEVICES
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MT6L58AE
MT3S06S
MT3S06T)
MT3S03AS
MT3S03AT)
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MT3S06S
Abstract: MT3S06T MT6C06E
Text: TO SH IBA MT6C06E TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6C06E Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and extreme super mini 6 pins package : ES6 MOUNTED DEVICES 5 Three-pins (SSM/TESM) mold products are
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MT6C06E
MT3S06S
MT3S06T)
MT3S06S
MT3S06T
MT6C06E
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MT6P06E
Abstract: MT3S06S MT3S06T
Text: TO SH IBA MT6P06E TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6P06E Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Two devices are built in to the super-thin and extreme super mini 6 pins package : ES6 MOUNTED DEVICES 5 B- Q1/Q2 : SSM (TESM)
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MT6P06E
MT3S06S
MT3S06T)
MT3S06S
MT3S06T
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MT3S03AS
Abstract: MT3S03AT MT3S06S MT3S06T MT6L58AE
Text: TO SH IBA MT6L58AE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L58AE Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • Two devices are built in to the super-thin and extreme super mini 6 pins package : ES6 6ö V -O 1 1 ir> IT) in O O o 2
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MT6L58AE
MT3S06S
MT3S06T)
MT3S03AS
MT3S03AT)
MT3S03AS
MT3S03AT
MT3S06S
MT3S06T
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