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    MT3S11T Search Results

    MT3S11T Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MT3S11T Toshiba VHF~UHF Band Low-Noise Amplifier Applications Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: MT6L11FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L11FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 MT3S11T MT3S11FS Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector- base voltage VCBO


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    PDF MT6L11FS MT3S11T MT3S11FS)

    Untitled

    Abstract: No abstract text available
    Text: MT6L63FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L63FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. TESM(fSM) mold products Q2 MT3S07T MT3S11T (MT3S07FS)


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    PDF MT6L63FS MT3S07T MT3S07FS) MT3S11T MT3S11FS)

    MT3S11T

    Abstract: No abstract text available
    Text: MT3S11T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S11T Unit: mm VHF~UHF Band Low-Noise Amplifier Applications VHF~UHF Band Oscillator Applications • • Superior performance in oscillator applications. Superior noise characteristics 2 : NF = 2.4 dB, |S21e| = 3.5 dB f = 2 GHz


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    PDF MT3S11T 0022g MT3S11T

    VHF-UHF Band Low Noise Amplifier

    Abstract: IC vhf/uhf Amplifier transistor amplifier VHF/UHF MT3S11T
    Text: MT3S11T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S11T Unit: mm VHF~UHF Band Low-Noise Amplifier Applications VHF~UHF Band Oscillator Applications • • Superior performance in oscillator applications. Superior noise characteristics : NF = 2.4 dB, |S21e|2 = 3.5 dB f = 2 GHz


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    PDF MT3S11T 0022g VHF-UHF Band Low Noise Amplifier IC vhf/uhf Amplifier transistor amplifier VHF/UHF MT3S11T

    MT3S06FS

    Abstract: MT3S06T MT3S11FS MT3S11T MT6L68FS
    Text: MT6L68FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L68FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. MT3S06T MT3S11T TESM(fSM) mold products (MT3S06FS)


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    PDF MT6L68FS MT3S11FS) MT3S06FS) MT3S11T MT3S06T MT3S06FS MT3S06T MT3S11FS MT3S11T MT6L68FS

    MT3S07FS

    Abstract: MT3S07T MT3S11FS MT3S11T MT6L63FS
    Text: MT6L63FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L63FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. Q2 MT3S07T MT3S11T (MT3S07FS) (MT3S11FS) 2 5 3 4 0.15±0.05


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    PDF MT6L63FS MT3S11FS) MT3S11T MT3S07FS) MT3S07T MT3S07FS MT3S07T MT3S11FS MT3S11T MT6L63FS

    MT3S07FS

    Abstract: MT3S07T MT3S11FS MT3S11T MT6L63FS
    Text: MT6L63FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L63FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. Q2 MT3S07T MT3S11T (MT3S07FS) (MT3S11FS) 2 5 3 4 0.15±0.05


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    PDF MT6L63FS MT3S11FS) MT3S11T MT3S07FS) MT3S07T MT3S07FS MT3S07T MT3S11FS MT3S11T MT6L63FS

    MT3S11T

    Abstract: No abstract text available
    Text: MT3S11T 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S11T ○ VHF~UHF 低雑音増幅用 単位: mm • OSC 用途に優れています。 • 雑音特性が優れています。 : NF = 2.4 dB⎪S21e⎪2 = 3.5 dB f = 2 GHz


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    PDF MT3S11T dBS21e2 MT3S11T

    Untitled

    Abstract: No abstract text available
    Text: MT6L68FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L68FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. MT3S06T MT3S11T TESM(fSM) mold products (MT3S06FS)


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    PDF MT6L68FS MT3S06T MT3S06FS) MT3S11T MT3S11FS)

    Untitled

    Abstract: No abstract text available
    Text: MT6L11FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L11FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 MT3S11T MT3S11FS Corresponding three-pin products:TESM(fSM) mold products 6 2 5 3 4 +0.02 Q1/Q2 1 0.48 -0.04


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    PDF MT6L11FS MT3S11T MT3S11FS)

    MT3S11T

    Abstract: No abstract text available
    Text: MT3S11T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S11T Unit: mm VHF~UHF Band Low-Noise Amplifier Applications VHF~UHF Band Oscillator Applications • • Superior performance in oscillator applications. Superior noise characteristics 2 : NF = 2.4 dB, |S21e| = 3.5 dB f = 2 GHz


    Original
    PDF MT3S11T 0022g MT3S11T

    Untitled

    Abstract: No abstract text available
    Text: MT6L63FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L63FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. MT3S07T MT3S11T (MT3S07FS) (MT3S11FS) Maximum Ratings (Ta = 25°C)


    Original
    PDF MT6L63FS MT3S07T MT3S07FS) MT3S11T MT3S11FS)

    Untitled

    Abstract: No abstract text available
    Text: MT6L68FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L68FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. MT3S06T MT3S11T TESM(fSM) mold products (MT3S06FS)


    Original
    PDF MT6L68FS MT3S06T MT3S06FS) MT3S11T MT3S11FS)

    Untitled

    Abstract: No abstract text available
    Text: MT6L63FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L63FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. Q2 MT3S07T MT3S11T (MT3S07FS) (MT3S11FS) Rating Symbol


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    PDF MT6L63FS MT3S07T MT3S07FS) MT3S11T MT3S11FS)

    sec 2sc5088

    Abstract: samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS
    Text: 2007-9 PRODUCT GUIDE Radio-Frequency Semiconductors Radio-Frequency Semiconductor Devices Thank you for using Toshiba’s semiconductor devices. As you know, semiconductor products are widely used in both home and industrial applications. This catalog covers transistors, diodes and


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    PDF BCE0003D S-167 BCE0003E sec 2sc5088 samsung UHF/VHF TV Tuner 2SC5066 datasheet RF Bipolar Transistor transistor 2SC5066 2SC5088 SEC MT6L04AE MT4S200T AU82 MT6L63FS

    MT4S300T

    Abstract: TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476
    Text: 2011-1 PRODUCT GUIDE Radio-Frequency Semiconductors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Recommended Products by Application . 3 to 8 1.1 Cell Phones 1.2 TV Tuners 1.3 FRS/GMRS 1.4 Cordless Phones


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    PDF BCE0003F MT4S300T TA4032FT MT3S111TU JAPANESE 2SC TRANSISTOR 2010 MT4S301T TA4029CTC TB7602CTC MT3S111P JAPANESE TRANSISTOR 2SC 2010 2sk3476

    Untitled

    Abstract: No abstract text available
    Text: MT6L68FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L68FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. (MT3S06FS) (MT3S11FS) Rating Symbol Unit Q1 Q2 Collector-base voltage


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    PDF MT6L68FS MT3S06T MT3S06FS) MT3S11T MT3S11FS)

    MT3S11FS

    Abstract: MT3S11T MT6L11FS
    Text: MT6L11FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L11FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 1.0±0.05 0.7±0.05 Superior noise characteristics Superior performance in buffer and oscillator applications.


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    PDF MT6L11FS MT3S11T MT3S11FS) MT3S11FS MT3S11T MT6L11FS

    TOSHIBA RF Power Module S-AV24

    Abstract: diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192
    Text: 高周波用半導体デバイス ダイオード編 ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製


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    PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 TOSHIBA RF Power Module S-AV24 diode varicap BB 112 varicap v147 2SC386A 2SK1310 3SK78 2sc5066 V101 varicap diode 1SV149 2SK192

    3SK73

    Abstract: S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112
    Text: 高周波用半導体デバイス パワーデバイス編 ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製


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    PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 3SK73 S-AV24 3SK121 3SK114 TOSHIBA RF Power Module S-AV24 3SK101 S-AU82VL diode varicap BB 112 2SC2328 3SK112

    BB 505 Varicap Diode

    Abstract: s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114
    Text: Radio-Frequency Semiconductors Diodes Semiconductor Company The information contained herein is subject to change without notice. 021023_D TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent


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    PDF 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H BB 505 Varicap Diode s-av24 V101 varicap diode varicap v101 varicap v147 varicap v103 replacement for 2sc5088 horizontal transistors TOSHIBA S-AV29H Zener c9v 3SK114

    FET K161

    Abstract: S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR
    Text: Radio-Frequency Semiconductors Transistors, FETs, Cell Packs Semiconductor Company The information contained herein is subject to change without notice. The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or


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    PDF 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 S-AV26H FET K161 S-AV24 k192a Transistor C1923 C1923 transistor k161 jfet fet k241 k161 mosfet C1923 transistor base c2498 TRANSISTOR

    FET K161

    Abstract: Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923
    Text: 高周波用半導体デバイス トランジスタ・FET・セルパック編 ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製


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    PDF 050106DAD1 3SK114 3SK126 S1255 2SC2644 S-AV24 3SK115 3SK291 S1256 FET K161 Transistor C2216 Transistor k161 k161 jfet k192a Transistor C2668 fet k241 k161 mosfet Transistor C2347 Transistor C1923

    2sc5088 horizontal transistors

    Abstract: S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509
    Text: High-Frequency Semiconductors Power Devices Semiconductor Company The information contained herein is subject to change without notice. 021023_D The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or


    Original
    PDF 3SK114 3SK126 S1255 2SC2644 2-AV24 3SK115 3SK291 S1256 2-AV26H 2sc5088 horizontal transistors S-AV36 2SK192 mosfet data 3SK121 equivalent S-AV32 3SK121 fet 2SC2879 CB LINEAR CIRCUIT replacement for 2sc5088 horizontal transistors 3SK73 equivalent transistor 2sc2509