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    NE246 Search Results

    NE246 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NE24600 NEC NPN Medium Power Microwave Transistor Scan PDF
    NE24615 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    NE24615 NEC NPN Medium Power Microwave Transistor Scan PDF
    NE24620 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    NE24620 NEC NPN Medium Power Microwave Transistor Scan PDF

    NE246 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AA59569R36S0500

    Abstract: AA59569R36T0250 AA59569R36T0171 A-A-59569 AA59569R36T0375 aa59569r36t0500 AA59569r36t AA59569R36S0375 AA59569R34T0125 AA59569R36S0781
    Text: Braids, Cables & Strands Technical Information Bare, Tinned, & Silver-plated Copper . 2 & 3 Standard & Extrawide Braided Copper . 4 & 5 Extraflexible, Round Braided Copper . 5 & 6


    Original     		PDF QQ-B-575) AA59569R36S0500 AA59569R36T0250 AA59569R36T0171 A-A-59569 AA59569R36T0375 aa59569r36t0500 AA59569r36t AA59569R36S0375 AA59569R34T0125 AA59569R36S0781

    Catalog

    Abstract: 100352 IEC 158-1 VDE 0660
    Text: PRODUCT SELECTION GUIDE CUSTOM ROPE-LAY CABLESTOLL BRAIDING FLAT WIRE BRAIDING RANDS G BRAID-REINFORCED CAPILLARY TUBING G SINGLE-THICKNESS BRAIDS SCOPE BRAIDS AIDING BRAID-REINFORCED TUBING AIDS SINGLE-THICKNESS BRAIDS BRAID-REINFORCED TUBING BRAIDS REINFORCED CABLES AND STRANDS


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE24600 NE24615 FEATURES DESCRIPTION • LOW IM DISTORTION CHARACTERISTICS AT HIGH OUTPUT LEVELS: NE24615 IM2 = -56 dBc, IM3 = -64 dBc NE24620 IM2= -63 dBc, IM3 = -72 dBc @ Vo = 120 dBnV/75 a The NE246 is an NPN transistor designed for broadband


    OCR Scan     		PDF NE24615 NE24620 dBnV/75 NE24600 NE24615 NE246

    2sc2952

    Abstract: No abstract text available
    Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE24600 NE24615 FEATURES DESCRIPTION • LOW IM DISTORTION CHARACTERISTICS AT HIGH OUTPUT LEVELS: NE24615 IM2 = -56 dBc, IM3 = -64 dBc NE24620 IM2= -63 dBc, IM3 = -72 dBc @ V o = 120 dB|iV/75 i l The NE246 is an NPN transistor designed for broadband


    OCR Scan     		PDF NE24615 NE24620 iV/75 NE24600 NE24615 NE246 lS22l2, 4275c! 2sc2952

    NE24600

    Abstract: NE24620 2SC2952 2SC2953 NE24615
    Text: SEC N E C / CALIFORNIA SbE D Li4274m 00G237S Tbl « N E C C " 1 7 3 5 -0 5 NE24600 NE24615 NE24620 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • E X C E L L E N T IM DISTO RTIO N C H A R A C T E R IS T IC S A T HIG H O U T P U T LEV E LS :


    OCR Scan     		PDF tj4S74m 00G237S NE24600 NE24615 NE24620 NE24620 NE246 preve35 2SC2952 2SC2953

    npn UHF transistor to-33

    Abstract: No abstract text available
    Text: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE24600 NE24615 FEATURES DESCRIPTION • LOW IM DISTORTION CHARACTERISTICS AT HIGH OUTPUT LEVELS: NE24615 IM2 » -56 dBc, IM3 = -64 dBc KE24620 IM2 - -63 dBc, IMS » -72 dBc @ Vo - 120 dB i v/75 Q The NE246 is an NPN transistor designed lor broadband


    OCR Scan     		PDF NE24615 KE24620 NE24600 NE24615 NE246 npn UHF transistor to-33

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


    OCR Scan     		PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan     		PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


    OCR Scan     		PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503

    73412

    Abstract: NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318
    Text: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency Optimum Noise Figure, Ga dB Noise Figure, NFopt (dB) Gain at Optimum Frequency, f (GHz) Typical Output Power and Gain vs. Frequency NE46134 10 V, 80 mA, PidB - 26.7


    OCR Scan     		PDF NE46134 NE85634 NE46734 NE85634 NE46134 NE85619 NE68119 73412 NE64535 CHIP transistor 348 fvh 38 p08c NE68039 NE889 NE02135 NE64500 NE24318

    TXD10K40

    Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
    Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40


    OCR Scan     		PDF bbS3131 BLU52 1N321 BYW56 1N321A BLV97 1N322 TXD10K40 TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G

    transistor IR 324 C

    Abstract: transistor selection guide
    Text: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency d B Gain Optimum Figure, G a (d B ) Noise Noise Figure, N F opt at Optimum F re q u e n c y , f (G H z ) Typical Output Power and Gain vs. Frequency


    OCR Scan     		PDF NE46134 NE85634 NE46134 NE46734 NE68018-T1 transistor IR 324 C transistor selection guide