796136-1
Abstract: No abstract text available
Text: 107-97003 Packaging Specification ASSY, SMT BATTERY CONN Nov03.2008 Rev A 1. PURPOSE 目的 Define the packaging specifiction and packaging method of ASSY, SMT BATTERY CONN . 订定ASSY, SMT BATTERY CONN 产品之包装规格及包装方式。 2. APPLICABLE PRODUCT 适用范围
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Nov03
5M/400
08M/400
QR-ME-030D
796136-1
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BSM181A
Abstract: BSM181AR NFC12 BSM 181 ar Eupec BSM
Text: BSM 181 A / BSM 181 AR SIMOPAC MODULE • Single switch power MOSFET module • N channel, enhancement mode • Avalanche rated • Package with insulated metal base plate • Built in gate series resistor Type VDS ID RDS on max Package Ordering Code BSM 181 AR
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C67076-A1017-A20
Nov-03-1997
BSM181A
BSM181AR
NFC12
BSM 181 ar
Eupec BSM
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Untitled
Abstract: No abstract text available
Text: BSM 101 AR SIMOPAC MODULE • Power module • Single switch • N channel • Enhancement mode • Pakage with insulated metal base plate Type VDS ID RDS on max Package Ordering Code BSM 101 AR 50 V 200 A 0.003 Ω SSW MOS 1 C67076-S1018-A20 Maximum Ratings
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C67076-S1018-A20
Nov-03-1997
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SOT23 voltage regulator 10V
Abstract: 3V REGULATOR SOT-23 marking 33a sot23 MARKING e SOT235 18Y SOT23 1V 3A LDO marking 8A sot-23 18a sot23 SOT-23 type name 1uf sot-23
Text: NIKO-SEM 200mA Fixed Voltage Low Dropout Linear Regulator LDO - Preliminary L1212 Series SOT-23 GENERAL DESCRIPTION FEATURES The L1212 Series are positive and low dropout voltage regulators with 200mA output current capability. These devices are designed for use in low voltage applications
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200mA
L1212
OT-23
200mA
OT-23,
OT-25
NOV-03-2004
SOT23 voltage regulator 10V
3V REGULATOR SOT-23
marking 33a sot23
MARKING e SOT235
18Y SOT23
1V 3A LDO
marking 8A sot-23
18a sot23
SOT-23 type name
1uf sot-23
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P8503BMG
Abstract: No abstract text available
Text: P8503BMG N-Channel Logic Level Enhancement Mode Field Effect Transistor Preliminary NIKO-SEM SOT-23 Lead Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25 85mΩ 3A 1. GATE 2. DRAIN 3. SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
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P8503BMG
OT-23
10YWW"
Nov-03-2004
P8503BMG
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BTS333
Abstract: BTS 333
Text: HITFETBTS 333 Smart Lowside Power Switch Features Product Summary • Logic Level Input • Input Protection ESD • Temperature limitation adjustable by input voltage • Overload protection Drain source voltage VDS 42 V On-state resistance RDS(on) 18
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Nov-03-2000
BTS333
BTS 333
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SC-75
Abstract: 857BT
Text: BC 847BT NPN Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 857BT 2 1 Type Marking BC 847BT 1Fs Pin Configuration 1=B 2=E VPS05996 Package
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847BT
857BT
VPS05996
SC-75
EHP00381
EHP00367
Nov-03-1999
EHP00365
SC-75
857BT
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Untitled
Abstract: No abstract text available
Text: BSM 111 AR SIMOPAC MODULE • Single switch power MOSFET module • N channel, enhancement mode • Avalanche rated • Package with insulated metal base plate • Built in gate series resistor Type VDS ID RDS on max Package Ordering Code BSM 111 AR 100 V
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C67076-S1013-A20
Nov-03-1997
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marking 69
Abstract: MARKING 06 SOT89 marking CE SOT-89 marking 69 SOT-89 sot-89 marking cg
Text: BCX 69 PNP Silicon AF Transistors 1 • For general AF applications 2 • High collector current 3 • High current gain • Low collector-emitter saturation voltage • Complementary type: BCX 68 NPN 2 VPS05162 Type Marking Pin Configuration Package BCX 69
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VPS05162
OT-89
EHP00473
EHP00474
EHP00475
Nov-03-1999
marking 69
MARKING 06 SOT89
marking CE SOT-89
marking 69 SOT-89
sot-89 marking cg
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ILA03N60
Abstract: ILB03N60 ILD03N60 ILP03N60 Q67040-S4626 Q67040-S4628
Text: ILA03N60, ILP03N60 ILB03N60, ILD03N60 ^ LightMOS Power Transistor C • • • • • • • New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET
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ILA03N60,
ILP03N60
ILB03N60,
ILD03N60
P-TO-220-3-1
O-220AB)
ILA03N60
ILB03N60
ILA03N60
ILB03N60
ILD03N60
ILP03N60
Q67040-S4626
Q67040-S4628
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857T
Abstract: BC857AT BC857BT SC-75
Text: BC 857T PNP Silicon AF Transistor 3 For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Complementary types: BC 847 .T 2 1 Type Marking Pin Configuration BC 857AT 3Es 1=B 2=E 3=C SC-75 BC 857BT 3Fs
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857AT
SC-75
857BT
VPS05996
EHP00381
EHP00380
Nov-03-1999
EHP00382
EHP00379
857T
BC857AT
BC857BT
SC-75
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PA502FMG
Abstract: SEM 2004 p-Channel Logic Level Enhancement Mode niko-sem
Text: P-Channel Logic Level Enhancement NIKO-SEM PA502FMG Mode Field Effect Transistor SOT-23 Lead-Free D PRODUCT SUMMARY V BR DSS RDS(ON) ID -20 150mΩ -3A 1 :GATE 2 :DRAIN 3 :SOURCE G S ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS
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PA502FMG
OT-23
RESISTAN01
Nov-03-2004
PA502FMG
SEM 2004
p-Channel Logic Level Enhancement Mode
niko-sem
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MGFC47V5864
Abstract: mitsubishi optical transmitter
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> R/IGFC47V5864 5.8~6.4G H z BAND 50W INTERNALLY MATCHED GaAs FET D E S C R IP TIO N OUTLINE DRAWING The MGFC47V5864 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 ~ 6.4GHz band amplifiers. The hermetically sealed metal-ceramic package
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MGFC47V5864
MGFC47V5864
47dBm
mitsubishi optical transmitter
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Untitled
Abstract: No abstract text available
Text: euoec F BSM 111 AR SIMOPAC MODULE • Single switch power MOSFET module • N channel, enhancement mode • Avalanche rated • Package with insulated metal base plate • Built in gate series resistor Type ^bs b f î DS on max Package Ordering Code BSM 111 AR
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C67076-S1013-A20
Nov-03-1997
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