Untitled
Abstract: No abstract text available
Text: H A R R RFG40N10LE, RFP40N10LE, RF1S40N1 OLE, RF1S40N1OLESM IS semiconductor 40A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel, Enhancement-Mode Power MOSFETs juiy 1996 Features Packages JEDEC STYLE TO-247 • 40 A, 100V r D S O N = 0.040Q • 2kV ESD Protected
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RFG40N10LE,
RFP40N10LE,
RF1S40N1
RF1S40N1OLESM
O-247
RF1S40N10LE,
RF1S40N10LESM
O-263AB
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262E-9
Abstract: No abstract text available
Text: J W S Semiconductor RFG40N10LE, RFP40N10LE, RF1S40N10LESM I Data Sheet April 1999 40A, 100V, 0.040 Ohm, ESD Protected, Logic Level N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature
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RFG40N10LE,
RFP40N10LE,
RF1S40N10LESM
33e-3
00e-5)
98e-3
38e-6)
262E-9
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F40N10LE
Abstract: 40n10le F40N1OLE F1S40N FP40N10L F40N10 F*N10L F40N rfp40n
Text: ÜB H A R R I S RFG40N10LE, RFP40N10LE, vmj se», co. »uc, o• RF1S40N10LE, RF1S40N10LESM 40A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel, Enhancement-Mode Power MOSFETs D ece m b e r 1995 Features Packages JE D EC S TYLE TO -247 • 4 0 A ,1 0 0 V
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OCR Scan
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RFG40N10LE,
RFP40N10LE,
RF1S40N10LE,
RF1S40N10LESM
33e-3
00e-5)
38e-6)
F40N10LE
40n10le
F40N1OLE
F1S40N
FP40N10L
F40N10
F*N10L
F40N
rfp40n
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