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    Harris Semiconductor F40N10LE

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    Quest Components F40N10LE 383
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    F40N10LE Datasheets Context Search

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    F40N10LE

    Abstract: 100V 10A NMOS TO220 40n10le 247 1334 RF1S40N10LE RF1S40N10LESM RF1S40N10LESM9A RFG40N10LE RFP40N10LE FP40N10L
    Text: S E M I C O N D U C T O R RFG40N10LE, RFP40N10LE, RF1S40N10LE, RF1S40N10LESM 40A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel, Enhancement-Mode Power MOSFETs July 1996 Features • • • • • • • Packages JEDEC STYLE TO-247 40A, 100V rDS ON = 0.040Ω


    Original     		PDF RFG40N10LE, RFP40N10LE, RF1S40N10LE, RF1S40N10LESM O-247 175oC F40N10LE 100V 10A NMOS TO220 40n10le 247 1334 RF1S40N10LE RF1S40N10LESM RF1S40N10LESM9A RFG40N10LE RFP40N10LE FP40N10L

    40n10le

    Abstract: F40N10LE 40N10 FP40N10L RFP40N10LE RF1S40N10LESM RF1S40N10LESM9A RFG40N10LE TB334 FG40N10L
    Text: RFG40N10LE, RFP40N10LE, RF1S40N10LESM Data Sheet January 2002 40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs Features • 40A, 100V These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes


    Original     		PDF RFG40N10LE, RFP40N10LE, RF1S40N10LESM 40n10le F40N10LE 40N10 FP40N10L RFP40N10LE RF1S40N10LESM RF1S40N10LESM9A RFG40N10LE TB334 FG40N10L

    40n10le

    Abstract: F40N10LE 40A100V RF1S40N10LESM RF1S40N10LESM9A RFG40N10LE RFP40N10LE TB334 F40N10
    Text: RFG40N10LE, RFP40N10LE, RF1S40N10LESM Data Sheet October 1999 40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs File Number 4061.5 Features • 40A, 100V These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process


    Original     		PDF RFG40N10LE, RFP40N10LE, RF1S40N10LESM 40n10le F40N10LE 40A100V RF1S40N10LESM RF1S40N10LESM9A RFG40N10LE RFP40N10LE TB334 F40N10

    f40n10le

    Abstract: No abstract text available
    Text: RFG40N10LE, RFP40N10LE, RF1S40N10LESM Data Sheet Title FG4 10L P40 0LE 1S4 10L M bt A, 0V, 40 m, gic vel anwer OSTs) utho October 1999 40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs Features These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process


    Original     		PDF RFG40N10LE, RFP40N10LE, RF1S40N10LESM f40n10le

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    F40N10LE

    Abstract: FP40N10L FG40N10L
    Text: inter«! RFG40N10LE, RFP40N10LE, RF1S40N10LESM D a ta S h e e t 40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes


    OCR Scan     		PDF RFG40N10LE, RFP40N10LE, RF1S40N10LESM TA49163. RF1S40N10LESM AN7254 AN7260. F40N10LE FP40N10L FG40N10L

    262E-9

    Abstract: No abstract text available
    Text: J W S Semiconductor RFG40N10LE, RFP40N10LE, RF1S40N10LESM I Data Sheet April 1999 40A, 100V, 0.040 Ohm, ESD Protected, Logic Level N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature


    OCR Scan     		PDF RFG40N10LE, RFP40N10LE, RF1S40N10LESM 33e-3 00e-5) 98e-3 38e-6) 262E-9

    F40N10LE

    Abstract: 40n10le F40N1OLE F1S40N FP40N10L F40N10 F*N10L F40N rfp40n
    Text: ÜB H A R R I S RFG40N10LE, RFP40N10LE, vmj se», co. »uc, o• RF1S40N10LE, RF1S40N10LESM 40A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel, Enhancement-Mode Power MOSFETs D ece m b e r 1995 Features Packages JE D EC S TYLE TO -247 • 4 0 A ,1 0 0 V


    OCR Scan     		PDF RFG40N10LE, RFP40N10LE, RF1S40N10LE, RF1S40N10LESM 33e-3 00e-5) 38e-6) F40N10LE 40n10le F40N1OLE F1S40N FP40N10L F40N10 F*N10L F40N rfp40n