F40N Search Results

F40NF06

Abstract: STF40NF06 F40NF0 TRANSISTOR mosfet 30V 40A switching TRANSISTOR mosfet 30V 40A K/TO-92 Marking STMicroelectronics
Contextual Info: F40NF06 N-CHANNEL 60V - 0.024Ω - 23A - TO-220FP STripFET II MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID F40NF06 60 V < 0.028 Ω 23 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.024Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE AT 100°C

P40NF03

Abstract: P40NF03L F40NF03L p40nf 70125 STP40NF03L 7025W 2816A
Contextual Info: F40NF03L STP40NF03L N-channel 30 V, 0.018 Ω, 40 A TO-220, TO-220FP STripFET Power MOSFET Features • Type VDSS RDS on max ID F40NF03L 30 V 0.022 Ω 23 A STP40NF03L 30 V 0.022 Ω 40 A Low threshold device Application ■ 3 3 1 TO-220 2 1 2 TO-220FP

F40N10LE

Abstract: 100V 10A NMOS TO220 40n10le 247 1334 RF1S40N10LE RF1S40N10LESM RF1S40N10LESM9A RFG40N10LE RFP40N10LE FP40N10L
Contextual Info: S E M I C O N D U C T O R RFG40N10LE, RFP40N10LE, RF1S40N10LE, RF1S40N10LESM 40A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel, Enhancement-Mode Power MOSFETs July 1996 Features • • • • • • • Packages JEDEC STYLE TO-247 40A, 100V rDS ON = 0.040Ω

F40N10LE

Abstract: FP40N10L FG40N10L
Contextual Info: inter«! RFG40N10LE, RFP40N10LE, RF1S40N10LESM D a ta S h e e t 40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes

40n10le

Abstract: F40N10LE 40N10 FP40N10L RFP40N10LE RF1S40N10LESM RF1S40N10LESM9A RFG40N10LE TB334 FG40N10L
Contextual Info: RFG40N10LE, RFP40N10LE, RF1S40N10LESM Data Sheet January 2002 40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs Features • 40A, 100V These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes

transistor d90 smd

Abstract: Type NS ceramic cap MIL-PRF-49464 F25CG0R2M1PX3 G10XXKITAPX05 bd-bj gap capacitors N220 P105 C11AH
Contextual Info: Company Overview Dielectric Laboratories, Inc. DLI is your global partner for application specific microwave and millimeter wave components serving customers in fiber optic, wireless, medical, transportation, semiconductor, space, avionics and military markets. With over 35 years of

40n10le

Abstract: F40N10LE 40A100V RF1S40N10LESM RF1S40N10LESM9A RFG40N10LE RFP40N10LE TB334 F40N10
Contextual Info: RFG40N10LE, RFP40N10LE, RF1S40N10LESM Data Sheet October 1999 40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs File Number 4061.5 Features • 40A, 100V These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process

f40n10le

Contextual Info: RFG40N10LE, RFP40N10LE, RF1S40N10LESM Data Sheet Title FG4 10L P40 0LE 1S4 10L M bt A, 0V, 40 m, gic vel anwer OSTs) utho October 1999 40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs Features These N-Channel enhancement mode power MOSFETs are manufactured using the latest manufacturing process

25t65

Abstract: tl741 FBT Hr f8t5 bu 25200 F20T12 270033 TL835 F28T5 TL830
Contextual Info: Phillips Desc Philips Naed 36734-2 367342 375196 375196 37519-6 27556-0 27555-2 27558-6 209957 20995-7 38320-8 373902 373902 37390-2 246611 24661-1 299552 29955-2 299560 29956-0 347815 34781-5 348037 34803-7 37474-4 374769 37476-9 27086-8 239442 22300-8 370221

262E-9

Contextual Info: J W S Semiconductor RFG40N10LE, RFP40N10LE, RF1S40N10LESM I Data Sheet April 1999 40A, 100V, 0.040 Ohm, ESD Protected, Logic Level N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature

F40N20

Abstract: STF40N20 STP40N20-STF40N20 W40N20 STB40N20 STP40N20 STW40N20 P40N b40n
Contextual Info: STP40N20-F40N20 STB40N20 - STW40N20 N-CHANNEL 200V - 0.038Ω - 40A TO-220/FP/TO-247/D2PAK LOW GATE CHARGE STripFET MOSFET Table 1: General Features TYPE STP40N20 STW40N20 STB40N20 F40N20 • ■ ■ ■ ■ ■ VDSS 200 200 200 200 V V V V Figure 1: Package

F40N10LE

Abstract: 40n10le F40N1OLE F1S40N FP40N10L F40N10 F*N10L F40N rfp40n
Contextual Info: ÜB H A R R I S RFG40N10LE, RFP40N10LE, vmj se», co. »uc, o• RF1S40N10LE, RF1S40N10LESM 40A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel, Enhancement-Mode Power MOSFETs D ece m b e r 1995 Features Packages JE D EC S TYLE TO -247 • 4 0 A ,1 0 0 V

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

Contextual Info: F40NF06 N-channel 60V - 0.024Ω - 23A - TO-220FP STripFET II Power MOSFET General features Type VDSS RDS on ID F40NF06 60V <0.028Ω 23A • Exceptional dv/dt capability ■ Low gate charge at 100°C ■ Application oriented characterization ■ 100% avalanche tested

P40NF03L

Abstract: F40NF0 F40NF03L P40NF03 STP40NF03L STF40NF03L 6794
Contextual Info: F40NF03L STP40NF03L N-channel 30 V, 0.018 Ω, 40 A TO-220, TO-220FP STripFET Power MOSFET Features • Type VDSS RDS on max ID F40NF03L 30 V 0.022 Ω 23 A STP40NF03L 30 V 0.022 Ω 40 A Low threshold device Application ■ 3 3 1 TO-220 2 1 2 TO-220FP

Bi-Cap

Contextual Info: Binary Tunable Caps for SLC Hybrids Bi-Cap Functional Applications: Matching Networks, Tank Cicuits, Dielectric resonator tuning/coupling. C1 C1 = 1 C2 = 2 x C 1 C3 = 4 x C 1 4 Pad C4 = 8 x C1 C2 C3 Benefits: • Small size is compatible with microwave geometries.

F40NF06

Abstract: F40NF0
Contextual Info: F40NF06 N-CHANNEL 60A - 0.024Ω - 23A - TO-220 STripFET II MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID F40NF06 60 V < 0.028 Ω 23 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.024Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE AT 100°C

P40NF03L

Abstract: P40NF03 P40NF0 STP40NF03L F40NF0
Contextual Info: F40NF03L STP40NF03L N-channel 30 V, 0.018 Ω, 40 A TO-220, TO-220FP STripFET Power MOSFET Features • Type VDSS RDS on max ID F40NF03L 30 V 0.022 Ω 23 A STP40NF03L 30 V 0.022 Ω 40 A Low threshold device Application ■ 3 3 1 TO-220 2 1 2 TO-220FP

P40NF03L

Abstract: 6794
Contextual Info: F40NF03L STP40NF03L N-channel 30 V, 0.018 Ω, 40 A TO-220, TO-220FP STripFET Power MOSFET Features • Type VDSS RDS on max ID F40NF03L 30 V 0.022 Ω 23 A STP40NF03L 30 V 0.022 Ω 40 A Low threshold device 1 Application ■ TO-220 2 3 3 1 2 TO-220FP

Contextual Info: H A R R RFG40N10LE, RFP40N10LE, RF1S40N1 OLE, RF1S40N1OLESM IS semiconductor 40A, 100V, ESD Rated, Avalanche Rated, Logic Level N-Channel, Enhancement-Mode Power MOSFETs juiy 1996 Features Packages JEDEC STYLE TO-247 • 40 A, 100V r D S O N = 0.040Q • 2kV ESD Protected

F40NF06

Abstract: F40NF0 F40NF STF40NF06 JESD97
Contextual Info: F40NF06 N-channel 60V - 0.024Ω - 23A - TO-220FP STripFET II Power MOSFET General features Type VDSS RDS on ID F40NF06 60V <0.028Ω 23A • Exceptional dv/dt capability ■ Low gate charge at 100°C ■ Application oriented characterization ■ 100% avalanche tested