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    B40N Price and Stock

    Infineon Technologies AG IKB40N65ES5ATMA1

    IGBT TRENCH FS 650V 79A TO263-3
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    DigiKey IKB40N65ES5ATMA1 Digi-Reel 8,588 1
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    STMicroelectronics STB40N60M2

    MOSFET N-CH 600V 34A D2PAK
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    DigiKey STB40N60M2 Cut Tape 2,566 1
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    Infineon Technologies AG IKB40N65EF5ATMA1

    IGBT TRENCH FS 650V 74A TO263-3
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    DigiKey IKB40N65EF5ATMA1 Digi-Reel 1,096 1
    • 1 $5.19
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    Mouser Electronics IKB40N65EF5ATMA1 1,961
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    Infineon Technologies AG AIKB40N65DF5ATMA1

    IGBT NPT 650V 40A TO263-3
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    DigiKey AIKB40N65DF5ATMA1 Reel 1,000 1,000
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    Avnet Americas AIKB40N65DF5ATMA1 Reel 26 Weeks 1,000
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    Infineon Technologies AG AIGB40N65H5ATMA1

    DISCRETE SWITCHES
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    DigiKey AIGB40N65H5ATMA1 Digi-Reel 65 1
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    Avnet Americas AIGB40N65H5ATMA1 Reel 26 Weeks 1,000
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    Rochester Electronics AIGB40N65H5ATMA1 6,000 1
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    Find more B40N price and stock on Findchips.com

    B40N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    871P-B40N40-N3

    Abstract: 871P-D40NP40-D4 ALLEN-BRADLEY MICRO 5 PIN 871P-BW15N40-R3 b20n40 B40N 871A
    Text: Inductive Proximity Sensors Bulletin 871P VersaCubet Description Bulletin 871P VersaCubet inductive proximity sensors are self-contained, solid state devices designed to sense the presence of ferrous and nonferrous metal objects without touching them. VersaCube models feature two LEDs,


    Original     		PDF

    b40nf10

    Abstract: STB40NF10 STB40NF10T4 B40NF
    Text: B40NF10 N-CHANNEL 100V - 0.025Ω - 50A - D²PAK LOW GATE CHARGE STripFET II MOSFET Figure 1: Package Table 1: General Features TYPE B40NF10T4 • ■ ■ ■ ■ VDSS RDS on ID 100 V < 0.028 Ω 50 A TYPICAL RDS(on) = 0.025Ω EXCEPTIONAL dv/dt CAPABILITY


    Original     		STB40NF10 STB40NF10T4 b40nf10 STB40NF10 STB40NF10T4 B40NF PDF

    B40NF

    Abstract: B40NF10 B40NF10L
    Text: B40NF10L N-channel 100V - 0.028Ω - 40A - D2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID B40NF10L 100V <0.033Ω 40A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization


    Original     		STB40NF10L B40NF B40NF10 B40NF10L PDF

    B40NF

    Abstract: JESD97 STB40NS15 STB40NS15T4
    Text: B40NS15 N-channel 150V - 0.045Ω - 40A - D2PAK MESH OVERLAY Power MOSFET Features Type VDSS B40NS15 150V RDS on (max) <0.052Ω • Exceptional dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitances ID 40A 3 1 D2PAK Applications


    Original     		STB40NS15 STB40NS15T4 B40NF15 B40NF JESD97 STB40NS15 STB40NS15T4 PDF

    B40N

    Abstract: No abstract text available
    Text: B40NS15 N-channel 150V - 0.045Ω - 40A - D2PAK MESH OVERLAY Power MOSFET Features Type VDSS B40NS15 150V RDS on ID (max) <0.052Ω • Exceptional dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitances u d o 3 r P e 1 D2PAK


    Original     		STB40NS15 B40NF15 B40N PDF

    B40NF10

    Abstract: No abstract text available
    Text: B40NF10 N-channel 100V - 0.025Ω - 50A - D2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID B40NF10 100V <0.028Ω 50A • Exceptional dv/dt capability ■ Low gate charge at 100°C ■ 100% avalanche tested ■ Application oriented characterization


    Original     		STB40NF10 B40NF10 PDF

    P40N20

    Abstract: STB40N20 STF40N20 STP40N20 STP40N20FP STW40N20
    Text: STP40N20 - STF40N20 B40N20 - STW40N20 N-channel 200V - 0.038Ω -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET Power MOSFET General features Type VDSS RDS on ID PW B40N20 200V <0.045Ω 40A 160W STP40N20 200V <0.045Ω 40A 160W STP40N20FP


    Original     		STP40N20 STF40N20 STB40N20 STW40N20 D2PAK/TO-220/TO-220FP/TO-247 STB40N20 STP40N20 STP40N20FP O-220 P40N20 STF40N20 STP40N20FP STW40N20 PDF

    B40NF10

    Abstract: N-channel MOSFET to-247 50a B40nF JESD97 STB40NF10 STB40NF10T4 12NEW
    Text: B40NF10 N-channel 100V - 0.025Ω - 50A - D2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID B40NF10 100V <0.028Ω 50A • Exceptional dv/dt capability ■ Low gate charge at 100°C ■ 100% avalanche tested ■ Application oriented characterization


    Original     		STB40NF10 B40NF10 N-channel MOSFET to-247 50a B40nF JESD97 STB40NF10 STB40NF10T4 12NEW PDF

    F40N20

    Abstract: STF40N20 STP40N20-STF40N20 W40N20 STB40N20 STP40N20 STW40N20 P40N b40n
    Text: STP40N20-STF40N20 B40N20 - STW40N20 N-CHANNEL 200V - 0.038Ω - 40A TO-220/FP/TO-247/D2PAK LOW GATE CHARGE STripFET MOSFET Table 1: General Features TYPE STP40N20 STW40N20 B40N20 STF40N20 • ■ ■ ■ ■ ■ VDSS 200 200 200 200 V V V V Figure 1: Package


    Original     		STP40N20-STF40N20 STB40N20 STW40N20 O-220/FP/TO-247/D2PAK STP40N20 STB40N20 STF40N20 F40N20 STF40N20 STP40N20-STF40N20 W40N20 STP40N20 STW40N20 P40N b40n PDF

    b40nf10

    Abstract: P40NF10 STD40NF10 STB40NF10T4 STB40NF10 STD40NF10T4 STP40NF10 D40NF
    Text: STP40NF10 STD40NF10 - B40NF10 N-CHANNEL 100V - 0.024Ω - 50A TO-220/DPAK/D2PAK LOW GATE CHARGE STripFET II POWER MOSFET TYPE VDSS RDS on ID STP40NF10 STD40NF10 B40NF10 100 V 100 V 100 V < 0.028 Ω < 0.028 Ω < 0.028 Ω 50 A 50 A 50 A • ■ ■


    Original     		STP40NF10 STD40NF10 STB40NF10 O-220/DPAK/D2PAK STD40NF10 O-220 b40nf10 P40NF10 STB40NF10T4 STB40NF10 STD40NF10T4 STP40NF10 D40NF PDF

    L6PR

    Abstract: P40N20 STF40N20 STB40N20 STP40N20 STP40N20FP STW40N20
    Text: STP40N20 - STF40N20 B40N20 - STW40N20 N-channel 200V - 0.038Ω -40A- D2PAK/TO-220/TO-220FP/TO-247 Low gate charge STripFET Power MOSFET General features Type VDSS RDS on ID PW B40N20 200V <0.045Ω 40A 160W STP40N20 200V <0.045Ω 40A 160W STP40N20FP


    Original     		STP40N20 STF40N20 STB40N20 STW40N20 D2PAK/TO-220/TO-220FP/TO-247 STB40N20 STP40N20 STP40N20FP O-220 L6PR P40N20 STF40N20 STP40N20FP STW40N20 PDF

    b40nf10

    Abstract: JESD97 STB40NS15 STB40NS15T4 b40n
    Text: B40NS15 N-channel 150V - 0.045Ω - 40A - D2PAK MESH OVERLAY Power MOSFET General features Type VDSS RDS on ID B40NS15 150V <0.052Ω 40A • Exceptional dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitances 3 1 D2PAK Description


    Original     		STB40NS15 STB40NS15T4 B40NF10 b40nf10 JESD97 STB40NS15 STB40NS15T4 b40n PDF

    STP40N20

    Abstract: w40n20 STW40N20 STB40N20 B40N20
    Text: STP40N20 B40N20 - STW40N20 N-CHANNEL 200V - 0.038Ω - 40A TO-220/TO-247/D2PAK LOW GATE CHARGE STripFET MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID Pw STP40N20 STW40N20 B40N20 200 V 200 V 200 V < 0.045 Ω < 0.045 Ω < 0.045 Ω


    Original     		STP40N20 STB40N20 STW40N20 O-220/TO-247/D2PAK STB40N20 O-220 O-247 STP40N20 w40n20 STW40N20 B40N20 PDF

    B40NF10L

    Abstract: b40nf10 B40NF JESD97 STB40NF10L
    Text: B40NF10L N-channel 100V - 0.028Ω - 40A - D2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID B40NF10L 100V <0.033Ω 40A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization


    Original     		STB40NF10L B40NF10L b40nf10 B40NF JESD97 STB40NF10L PDF

    Untitled

    Abstract: No abstract text available
    Text: Sockets, non-insulated - 2 - 4 0 mm dia. Socket B.N with threaded metric stud B.N H *S W 4 LAIII 5 LAIN LAIII LAIII LAIII B2N B3N 01.0001 01.0002 5.5 6 2 3 16.5 16.5 36 40 M3 M4 16 20 20 20 B4N B5N B6N 01.0003 01.0004 7 4 5 19.5 19.5 19.5 34 50 50 53


    OCR Scan     		PDF