RFS1003
Abstract: No abstract text available
Text: Application Note RFS1003-AN1 Application Note for RFS1003 Evaluation Board Power Sequencing The RFS1003 power amplifier is a GaAs MESFET PA and requires both a positive drain and negative (gate) voltage. Refer to the board layout diagram indicating voltage, ground and RF
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RFS1003-AN1
RFS1003
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Untitled
Abstract: No abstract text available
Text: RFS1003 5.1-5.9 GHz U-NII Power Amplifier 2 GND N/C VD2 1 GND N/C VD1 The RFS1003 power amplifier is a high-power, highperformance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 GHz frequency band. With a P1dB of 29 dBm, the device is ideal as a
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RFS1003
RFS1003
WLAN/802
11a/HIPERLAN/2
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RFS1003
Abstract: 5850MHZ
Text: RFS1003 5.1-5.9 GHz U-NII Power Amplifier Product Description Applications The RFS1003 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 GHz frequency band. With a P1dB of 29 dBm, the
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RFS1003
RFS1003
WLAN/802
11a/HIPERLAN/2
DRFS-1003-0DSH
5850MHZ
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JESD 95-1, SPP-012
Abstract: No abstract text available
Text: RFS1003 5.1-5.9 GHz U-NII Power Amplifier GND 3 RF IN 4 GND 5 N/C GND 2 VD2 N/C GND 1 VD1 N/C GND Product Description The RFS1003 power amplifier is a high-power, highperformance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 GHz frequency
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RFS1003
WLAN/802
11a/HIPERLAN/2
RFS1003
24-pin
DRFS-1003-0DSH
JESD 95-1, SPP-012
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transistor 1654
Abstract: RFS1003 RF Solutions
Text: Application Note RFS1003-AN1 Application Note for RFS1003 Evaluation Board Power Sequencing The RFS1003 power amplifier is a GaAs MESFET PA and requires both a positive drain and negative (gate) voltage. Refer to the board layout diagram indicating voltage, ground and RF connectors for proper connection. Proper power up and power
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RFS1003-AN1
RFS1003
ext4741
DRFS-1003-0AN1
transistor 1654
RF Solutions
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3906 PNP TRANSISTOR
Abstract: irlml6401tr LMK316BJ475KL MAX881 AN-0002 MAX881R RFS1003 RFS1006 AN0002 "Dual PNP Transistor" temperature compensation
Text: MESFET Amplifier Biasing AN-0002 Biasing Circuits and Considerations for GaAs MESFET Power Amplifiers Summary In order to properly use any amplifier it is necessary to provide the correct operating environment, especially the DC bias. This application note outlines some of the considerations for biasing MESFET
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AN-0002
3906 PNP TRANSISTOR
irlml6401tr
LMK316BJ475KL
MAX881
AN-0002
MAX881R
RFS1003
RFS1006
AN0002
"Dual PNP Transistor" temperature compensation
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