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    RFS1003 Search Results

    RFS1003 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RFS 1003 Anadigics Single-band power amplifiers Original PDF
    RFS1003 Anadigics 5.1-5.9 GHz U-NII Power Amplifier Original PDF
    RFS1003 RF Solutions 5.1-5.9 GHz U-NII Power Amplifier Original PDF

    RFS1003 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RFS1003

    Abstract: No abstract text available
    Text: Application Note RFS1003-AN1 Application Note for RFS1003 Evaluation Board Power Sequencing The RFS1003 power amplifier is a GaAs MESFET PA and requires both a positive drain and negative (gate) voltage. Refer to the board layout diagram indicating voltage, ground and RF


    Original
    PDF RFS1003-AN1 RFS1003

    Untitled

    Abstract: No abstract text available
    Text: RFS1003 5.1-5.9 GHz U-NII Power Amplifier 2 GND N/C VD2 1 GND N/C VD1 The RFS1003 power amplifier is a high-power, highperformance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 GHz frequency band. With a P1dB of 29 dBm, the device is ideal as a


    Original
    PDF RFS1003 RFS1003 WLAN/802 11a/HIPERLAN/2

    RFS1003

    Abstract: 5850MHZ
    Text: RFS1003 5.1-5.9 GHz U-NII Power Amplifier Product Description Applications The RFS1003 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 GHz frequency band. With a P1dB of 29 dBm, the


    Original
    PDF RFS1003 RFS1003 WLAN/802 11a/HIPERLAN/2 DRFS-1003-0DSH 5850MHZ

    JESD 95-1, SPP-012

    Abstract: No abstract text available
    Text: RFS1003 5.1-5.9 GHz U-NII Power Amplifier GND 3 RF IN 4 GND 5 N/C GND 2 VD2 N/C GND 1 VD1 N/C GND Product Description The RFS1003 power amplifier is a high-power, highperformance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 GHz frequency


    Original
    PDF RFS1003 WLAN/802 11a/HIPERLAN/2 RFS1003 24-pin DRFS-1003-0DSH JESD 95-1, SPP-012

    transistor 1654

    Abstract: RFS1003 RF Solutions
    Text: Application Note RFS1003-AN1 Application Note for RFS1003 Evaluation Board Power Sequencing The RFS1003 power amplifier is a GaAs MESFET PA and requires both a positive drain and negative (gate) voltage. Refer to the board layout diagram indicating voltage, ground and RF connectors for proper connection. Proper power up and power


    Original
    PDF RFS1003-AN1 RFS1003 ext4741 DRFS-1003-0AN1 transistor 1654 RF Solutions

    3906 PNP TRANSISTOR

    Abstract: irlml6401tr LMK316BJ475KL MAX881 AN-0002 MAX881R RFS1003 RFS1006 AN0002 "Dual PNP Transistor" temperature compensation
    Text: MESFET Amplifier Biasing AN-0002 Biasing Circuits and Considerations for GaAs MESFET Power Amplifiers Summary In order to properly use any amplifier it is necessary to provide the correct operating environment, especially the DC bias. This application note outlines some of the considerations for biasing MESFET


    Original
    PDF AN-0002 3906 PNP TRANSISTOR irlml6401tr LMK316BJ475KL MAX881 AN-0002 MAX881R RFS1003 RFS1006 AN0002 "Dual PNP Transistor" temperature compensation