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    RFS1006 Search Results

    RFS1006 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RFS 1006 Anadigics Single-band power amplifiers Original PDF
    RFS1006 Anadigics 3.4-3.6 GHz Power Amplifier Original PDF
    RFS1006 RF Solutions 3.4-3.6 GHz Power Amplifier Original PDF

    RFS1006 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: RFS1006 3.4-3.6 GHz Power Amplifier Product Description Applications The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 3.4-3.6 GHz frequency band. With a P1dB of 31 dBm, the device is ideal as a final stage for fixed wireless


    Original
    PDF RFS1006 RFS1006 24-pin DRFS-1006-0DSH

    RFS1006

    Abstract: 3436
    Text: RFS1006 3.4-3.6 GHz Power Amplifier Product Description Applications The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 3.4-3.6 GHz frequency band. With a P1dB of 31 dBm, the device is ideal as a final stage for


    Original
    PDF RFS1006 RFS1006 DRFS-1006-0DSH 3436

    Untitled

    Abstract: No abstract text available
    Text: Application Note RFS1006-AN1 #RRNKECVKQP0QVGHQT4 5'XCNWCVKQP$QCTF 2QYGT 5GSWGPEKPI 6JG 4(5 RQYGT CORNKHKGT KU C C#U /'5('6 2# CPF TGSWKTGU DQVJ C RQUKVKXG FTCKP CPF PGICVKXG ICVG XQNVCIG 4GHGT VQ VJG DQCTF NC[QWV FKCITCO KPFKECVKPI XQNVCIG ITQWPF CPF 4( EQPPGEVQTU HQT RTQRGT EQPPGEVKQP 2TQRGT RQYGT WR CPF


    Original
    PDF RFS1006-AN1

    PRFS-1006-0005

    Abstract: PRFS-1006-0006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-0009 PRFS-1006-0EVL RFS1006
    Text: RFS1006 3.4-3.6 GHz Power Amplifier Product Description Applications The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 3.4-3.6 GHz frequency band. With a P1dB of 31 dBm, the device is ideal as a final stage for fixed wireless


    Original
    PDF RFS1006 RFS1006 PRFS-1006-0005 PRFS-1006-0006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-0009 PRFS-1006-0EVL

    C1027

    Abstract: transistor c1027 c1027 transistor C1032 C1007 tp1002 tp1006 TP1003 C1015 transistor C1018
    Text: Application Note RFS1006-AN1 Application Note for RFS1006 Evaluation Board Power Sequencing The RFS1006 power amplifier is a GaAs MESFET PA and requires both a positive drain and negative (gate) voltage. Refer to the board layout diagram indicating voltage, ground and RF


    Original
    PDF RFS1006-AN1 RFS1006 J1004 C1027 transistor c1027 c1027 transistor C1032 C1007 tp1002 tp1006 TP1003 C1015 transistor C1018

    3906 PNP TRANSISTOR

    Abstract: irlml6401tr LMK316BJ475KL MAX881 AN-0002 MAX881R RFS1003 RFS1006 AN0002 "Dual PNP Transistor" temperature compensation
    Text: MESFET Amplifier Biasing AN-0002 Biasing Circuits and Considerations for GaAs MESFET Power Amplifiers Summary In order to properly use any amplifier it is necessary to provide the correct operating environment, especially the DC bias. This application note outlines some of the considerations for biasing MESFET


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    PDF AN-0002 3906 PNP TRANSISTOR irlml6401tr LMK316BJ475KL MAX881 AN-0002 MAX881R RFS1003 RFS1006 AN0002 "Dual PNP Transistor" temperature compensation