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Rochester Electronics LLC RJK03N6DPA-00-J5A MOSFET N-CH 30V 40A 8WPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RJK03N6DPA-00-J5A	Bulk	2,087,771		396	1 - 10 - 100 - 1000 $0.76 10000 $0.76	Buy Now
Renesas Electronics Corporation RJK03N6DPA-00#J5A Trans MOSFET N-CH Si 30V 40A 8-Pin WPAK(3) EP T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	RJK03N6DPA-00#J5A		1,934,071		438	1 - 10 - 100 - 1000 $0.7745 10000 $0.7745	Buy Now
	RJK03N6DPA-00#J5A		153,700		438	1 - 10 - 100 - 1000 $0.7745 10000 $0.7745	Buy Now
Rochester Electronics	RJK03N6DPA-00#J5A		2,087,771		1	1 $0.7289 10 $0.7289 100 $0.6852 1000 $0.6196 10000 $0.6196	Buy Now

RJK03N6DPA Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
RJK03N6DPA-00#J5A		Renesas Electronics	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 40A WPAK		Original	PDF

RJK03N6DPA Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJK03N6DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0787EJ0101 Power Switching Rev.1.01 May 30, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting	Original	RJK03N6DPA R07DS0787EJ0101 PWSN0008DC-B	PDF
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJK03N6DPA 30V, 40A, 3.8mmax. Built in SBD N Channel Power MOS FET High Speed Power Switching R07DS0787EJ0200 Rev.2.00 Feb 12, 2013 Features •       High speed switching Capable of 4.5 V gate drive Low drive current	Original	RJK03N6DPA R07DS0787EJ0200 PWSN0008DE-A	PDF
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJK03N6DPA Silicon N Channel Power MOS FET with Schottky Barrier Diode R07DS0787EJ0101 Power Switching Rev.1.01 May 30, 2012 Features •     High speed switching Capable of 4.5 V gate drive Low drive current High density mounting	Original	RJK03N6DPA R07DS0787EJ0101 PWSN0008DC-B	PDF
Untitled Abstract: No abstract text available Text: Preliminary Datasheet RJK03N6DPA 30 V, 40 A, 3.8 mmax. Built in SBD N-channel Power MOS FET High Speed Power Switching R07DS0787EJ0102 Rev.1.02 Oct 18, 2012 Features •       High speed switching Capable of 4.5 V gate drive Low drive current	Original	RJK03N6DPA R07DS0787EJ0102 PWSN0008DC-B	PDF
RJJ0319DSP Abstract: BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram Text: 2012.01 Renesas Discrete General Catalog Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs IGBTs Bipolar Transistors for Switching Amplification Transistors Product Numbers Applications Diodes What gives rise to this sort of encounter?	Original	R07CS0003EJ0200 RJJ0319DSP BCR8PM equivalent RJP30H2 N0201 rjj0319 NP109N055PUJ rjk5020 RJP30E2DPP NP75N04YUG lg washing machine circuit diagram	PDF
RJK03P7DPA Abstract: NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1 Text: RENESAS Electronics New Product Highlight Highlight of Discrete Devices Renesas Electronics Corporation Analog & Power Devices Marketing & Production Planning Division July 2013 2012 Renesas Electronics Corporation. All rights reserved. 00000-A RENESAS Discrete Devices Position	Original	0000-A PAE-AA-12-0177-1 PAE-AA-12-0049-1 RJK03P7DPA NP109N055PUJ rjh60d7bdpq rjh60t04 rjp65t43 NP75N04YUG NP60N055MUK NP109N04PUK RJU6052SDPD-E0 PS2761B-1	PDF