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    RN1242 Price and Stock

    Traco Power TRN-1-2421

    DC DC CONVERTER +/-5V 1W
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    DigiKey TRN-1-2421 Tube 32 1
    • 1 $12.1
    • 10 $11.03
    • 100 $10.1375
    • 1000 $9.55692
    • 10000 $9.55692
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    Traco Power TRN-1-2422

    DC DC CONVERTER +/-12V 1.1W
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    DigiKey TRN-1-2422 Tube 27 1
    • 1 $12.12
    • 10 $11.14
    • 100 $10.2388
    • 1000 $9.65252
    • 10000 $9.65252
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    Traco Power TRN-1-2423SM

    DC DC CONVERTER +/-15V 1.1W
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    DigiKey TRN-1-2423SM Tube 18 1
    • 1 $14.9
    • 10 $13.619
    • 100 $12.517
    • 1000 $11.80016
    • 10000 $11.80016
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    Traco Power TRN-1-2423

    DC DC CONVERTER +/-15V 1.1W
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    DigiKey TRN-1-2423 Tube 10 1
    • 1 $12.12
    • 10 $11.14
    • 100 $10.2388
    • 1000 $9.65252
    • 10000 $9.65252
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    Traco Power TSRN-1-2425

    DC DC CONVERTER 2.5V 2.5W
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    DigiKey TSRN-1-2425 Tube
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    Find more RN1242 price and stock on Findchips.com

    RN1242 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    RN1242 Toshiba Silicon NPN Epitaxial Type (PCT Process) Transistor Original PDF
    RN1242 Toshiba NPN Transistor Original PDF
    RN1242 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    RN1242 Unknown The Transistor Manual (Japanese) 1993 Scan PDF

    RN1242 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: RN1241~RN1244 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1241,RN1242,RN1243,RN1244 Unit: mm For Muting and Switching Applications l High emitter-base voltage : VEBO = 25v (min) l High reverse hfe : reverse hFE = 150 (typ.) (VCE = −2V, IC = −4ma)


    Original     		PDF RN1241 RN1244 RN1242 RN1243

    RN1241

    Abstract: RN1242 RN1243 RN1244
    Text: RN1241~RN1244 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1241,RN1242,RN1243,RN1244 Unit: mm For Muting and Switching Applications High emitter-base voltage : VEBO = 25v (min) High reverse hfe : reverse hFE = 150 (typ.) (VCE = −2V, IC = −4ma)


    Original     		PDF RN1241 RN1244 RN1242 RN1243 RN1244

    Untitled

    Abstract: No abstract text available
    Text: RN1241~RN1244 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1241,RN1242,RN1243,RN1244 Unit: mm For Muting and Switching Applications z High emitter-base voltage : VEBO = 25v (min) z High reverse hfe : reverse hFE = 150 (typ.) (VCE = −2V, IC = −4ma)


    Original     		PDF RN1241 RN1244 RN1242 RN1243

    RN1241

    Abstract: RN1242 RN1243 RN1244 RN1241-RN1244
    Text: RN1241～RN1244 東芝トランジスタ シリコンNPNエピタキシャル形 PCT方式 (バイアス抵抗内蔵) RN1241,RN1242,RN1243,RN1244 ○ ミューティング用 ○ スイッチング用 単位: mm z エミッタ・ベース間電圧が大きい。


    Original     		PDF RN1241RN1244 RN1241 RN1242 RN1243 RN1244 RN1241 RN1242 RN1243 RN1244 RN1241-RN1244

    RN1241

    Abstract: RN1242 RN1243 RN1244
    Text: RN1241~RN1244 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1241,RN1242,RN1243,RN1244 For Muting and Switching Applications Unit in mm High emitter-base voltage : VEBO = 25v (min) High reverse hfe : reverse hFE = 150 (typ.) (VCE = −2V, IC = −4ma)


    Original     		PDF RN1241 RN1244 RN1242 RN1243 RN1241 RN1242 RN1243 RN1244

    RN1241

    Abstract: RN1242 RN1243 RN1244
    Text: RN1241~RN1244 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process RN1241,RN1242,RN1243,RN1244 Unit: mm For Muting and Switching Applications z High emitter-base voltage : VEBO = 25v (min) z High reverse hfe : reverse hFE = 150 (typ.) (VCE = −2V, IC = −4ma)


    Original     		PDF RN1241 RN1244 RN1242 RN1243 RN1244

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    alternator diode 1776 B

    Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
    Text: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)


    Original     		PDF Hig86-755-3679515 alternator diode 1776 B 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent

    toshiba YK smd marking

    Abstract: bdj0097a 2904 SMD IC 2SC3327 VA MARKING rn4983 smd marking Yd XA marking k 2968 toshiba RN1106FV
    Text: 抵抗内蔵型トランジスタ BRT SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製


    Original     		PDF 050106DAA1 12341D5AD BDJ0097A toshiba YK smd marking bdj0097a 2904 SMD IC 2SC3327 VA MARKING rn4983 smd marking Yd XA marking k 2968 toshiba RN1106FV

    LM8550

    Abstract: KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960
    Text: Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC Type No. Maker KEC 2N2222/A Motorola KTN2222/A 2SA1150 Toshiba KTA1272 2SA1510 Sanyo KRA1 10S 2SB546A NEC KTB 1369 2N2369/A Motorola KTN2369/A 2SA1151 NEC KTA1266 2SA1511 Sanyo KRA1 10M 2SB560 Sanyo


    Original     		PDF 2N2222/A KTN2222/A 2SA1150 KTA1272 2SA1510 2SB546A 2N2369/A KTN2369/A 2SA1151 KTA1266 LM8550 KTD2026 2SC2320 equivalent NEC 12F DATASHEET 2N3904 MOTOROLA 2sc2240 equivalent 2N3906 MOTOROLA 2sc1983 2N5400 MOTOROLA 2SD1960

    MN1280

    Abstract: KGT50N60kda bc547 smd transistor kia1117af transistor smd zG y6 smd transistor MB4213 y4 smd transistor smd transistor zaa KGT25N120NDA
    Text: Table of Contents SMD THD ▣ Table of Contents 2 ▣ Bipolar Junction Transistor 4 Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistor Current Regulating Device Small Signal Low Noise Transistor


    Original     		PDF

    MIG20J501L

    Abstract: TOSHIBA IGBT DATA BOOK 1JU42 C7021 RN1242 TLP421 inverter circuit using IGBT TOSHIBA module mig20j
    Text: MIG20J501L TOSHIBA INTELLIGENT POWER MODULE MIG20J501L FEATURES 1 Maximum Rating VCES = 600 V, IC = 20 A (2) Control IC (3) (4) • High voltage IC ´ 3 + low voltage IC ´ 1 · 5-V system CMOS/correspond to TTL · Single power supply driving bootstrap circuit


    Original     		PDF MIG20J501L MIG20J501L TOSHIBA IGBT DATA BOOK 1JU42 C7021 RN1242 TLP421 inverter circuit using IGBT TOSHIBA module mig20j

    TPCA*8030

    Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 （トランジスタダイオード、セルパック） SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S


    Original     		PDF TC7SZ126FU SC-88A OT-353 BCJ0052E BCJ0052D TPCA*8030 lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558

    oz960

    Abstract: khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j
    Text: Table of Contents Index 4 SMD ✞✟ Bipolar Junction Transistors Transistor Line-up PNP Transistor Transistor Line-up (NPN Transistor) Small Signal General Purpose Transistors Small Signal Low Noise Transistors Small Signal Audio Muting Transistors Small Signal High hFE Transistors


    Original     		PDF KIA7900PI TC7SH04FU KIC7SH04FU SC604* KAC3301QN M51943 KIA7042AP/AF TC7SH08FU KIC7SH08FU LT1937 oz960 khb*9D5N20P MB4213 KIA78*pI MN1280 F10P048 KIA7812A MJE13007 mb4213 equivalent TRANSISTOR SMD N2 3j

    MIG20J501L

    Abstract: tlp421 equivalent inverter circuit using IGBT TOSHIBA module inverter air conditioner toshiba overcurrent inverter protection TOSHIBA IGBT DATA BOOK 1JU42 C7021 RN1242 TLP421
    Text: MIG20J501L TOSHIBA INTELLIGENT POWER MODULE MIG20J501L FEATURES 1 Maximum Rating VCES = 600 V, IC = 20 A (2) Control IC (3) (4) • High voltage IC x 3 + low voltage IC × 1 • 5-V system CMOS/correspond to TTL • Single power supply driving bootstrap circuit


    Original     		PDF MIG20J501L MIG20J501L tlp421 equivalent inverter circuit using IGBT TOSHIBA module inverter air conditioner toshiba overcurrent inverter protection TOSHIBA IGBT DATA BOOK 1JU42 C7021 RN1242 TLP421

    mig30j501l

    Abstract: MIG30J50 MIG30J inverter circuit using IGBT TOSHIBA module
    Text: MIG30J501L TOSHIBA INTELLIGENT POWER MODULE MIG30J501L FEATURES 1 Maximum Rating VCES = 600 V, IC = 30 A (2) Control IC (3) (4) • High voltage IC x 3 + low voltage IC × 1 • 5-V system CMOS/correspond to TTL • Single power supply driving bootstrap circuit


    Original     		PDF MIG30J501L mig30j501l MIG30J50 MIG30J inverter circuit using IGBT TOSHIBA module

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A RN1241 ~R N 1244 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1241, RN1242, RN 1243, RN1244 U nit in mm FOR M U TIN G A N D SW ITCHING APPLICATIONS 4.2 MAX. • High Emitter-Base Voltage • High Reverse h p g :V e b o = 25V (Min.)


    OCR Scan     		PDF RN1241 RN1241, RN1242, RN1244

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737

    70H40

    Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
    Text: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©


    OCR Scan     		PDF 2SA1162 2SA1163 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 70H40 transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr

    RN2226

    Abstract: 2sa1015 sot-23 rn4601 diode 2sa1015
    Text: B ia s R e s ì s t o ! B u ilt-in T ra n s is to r B R T General Use Type F6 Upper side: Similar to 2SC1815(NPN) Middle side: Similar to 2SC1815 + 2SA1015{NPN+PNP) Lower side: Similar to 2SA1015(PNP) 50 100 Similar TR V c e o (V ) Rating lcMAX(mA) Package


    OCR Scan     		PDF 2SC1815 2SC1815 2SA1015 OT-23MOD. /RN1501 VRN2501/ RN1502 RN2502 RN1503 RN2226 2sa1015 sot-23 rn4601 diode 2sa1015

    RN1417

    Abstract: rn4601
    Text: [1 ] Alphanum eric Product List [ 1 ] Alphanum eric Product List Device Page Device Page Device Page RN1001 75 RN1206 113 RN1318 152 RN1002 75 RN1207 118 RN1401 159 RN1003 75 RN1208 118 RN1402 159 RN1004 75 RN1209 118 RN1403 159 RN1005 75 RN1210 122 RN1404


    OCR Scan     		PDF RN1001 RN1002 RN1003 RN1004 RN1005 RN1006 RN1007 RN1008 RN1009 RN1010 RN1417 rn4601

    RN1241

    Abstract: RN1242 RN1243 RN1244
    Text: TOSHIBA RN1241 ~ R N 1 244 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1241, RN 1242, RN1243, RN1244 Unit in mm FOR M U TIN G A N D SW ITCHING APPLICATIONS • • High Emitter-Base Voltage :V e b o = 25V (Min.) High Reverse hpg : Reverse hFE = 150(Typ.) (V C E = —2V, I C = —4mA)


    OCR Scan     		PDF RN1241 RN1244 RN1241, RN1242, RN1243, RN1241 RN1242 RN1243 RN1244

    Untitled

    Abstract: No abstract text available
    Text: RN1241-RN1244 TOSHIBA SILICON NPN EPITAXIAL TYPE PCT PROCESS RN17A1 7 • ■g uRm N u -m 17A m m m ■w ■ R N 1■ 9 Z■R« r g m m ■v R N 1 1Ù.Ù. ■ ■ g u m u -m m Unit in mm FOR MUTING AND SWITCHING APPLICATIONS • • 4.2 MAX. High Emitter-Base Voltage :V eb 0 = 25V (Min.)


    OCR Scan     		PDF RN1241-RN1244 RN17A1

    RN1Z

    Abstract: BN1243 KN1204 RN1002 RN1003 RN1004 RN1006 RN1007 8N2226 RN1011
    Text: - 324 - * 1 3 = 2 5 ^ , *EP(äTc=25‘ C m. s tt m s ä v'cBO VcEO IC(DC) Pc (V) (V) (A) (W) Pc* (W) (uk) (max) V'CB ,'Btr (V) ' Ic (A) Ib (A) 0. 005 0.00025 50 50 5 0.01 0.3 0. 005 0. 00025 50 70 5 0.01 0.3 0. 005 0. 00025 0.1 50 80 5 0.01 0.3 0. 005 0.00025


    OCR Scan     		PDF RN1002 RN1003 RN1004 RN1006 RN1007 BN1223 10K/10K RN2224 RN1224 47K/10K RN1Z BN1243 KN1204 8N2226 RN1011