Contextual Info: Reliability Summary of SEC555 AIGaAsrSi IRED Chip Long-Term Operating Life Study IRED CHIP DEGRADATION STUDIES MECHANICAL RELIABILITY Honeywell has an ongoing study ot degradation of radiant output over time as a function of temperature and current for the SEC555 aluminum gallium arsenide

SEP8703

Abstract: honeywell 940 Quantum Effect Devices A360 SE3470 SE5470 SEC555 SEP8790 teradyne A360
Contextual Info: Reliability Summary of SEC555 AlGaAs:Si IRED Chip Long-Term Operating Life Study INTRODUCTION Honeywell is committed to the manufacture of reliable, high quality optoelectronic products. An ISO9001 based quality system is maintained, providing the necessary

Contextual Info: MX29GL512F MX29GL512F DATASHEET P/N:PM1617 REV. 1.6, OCT. 30, 2013 1 MX29GL512F Contents FEATURES. 5

MX29GL512

Abstract: MX29GL512E 00FF0001 29GL512 Q0-Q15 PM1524 mx29gl512e 70 MX29GL512EHMC-10Q MX29GL512EHT2I-10Q MX29GL512ELT2I-10Q
Contextual Info: MX29GL512E H/L MX29GL512E H/L DATASHEET P/N:PM1524 REV. 1.1, NOV. 22, 2010 1 MX29GL512E H/L SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • 2.7 to 3.6 volt for read, erase, and program operations • Byte/Word mode switchable - 67,108,864 x 8 / 33,554,432 x 16

MX29GL256FLT2I-90Q

Abstract: MX29GL256FHT MX29GL256 MX29GL256FHT2I-90Q MX29GL256F MX29GL256FL MX29GL256FH 29GL256 MX29GL256FLXFI-90Q PM1544
Contextual Info: MX29GL256F MX29GL256F DATASHEET P/N:PM1544 REV. 0.02, OCT. 18, 2010 1 PRELIMINARY MX29GL256F SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - MX29GL256F H/L: VI/O=VCC=2.7V~3.6V, VI/O voltage must tight with VCC

MX29GL512FHMI-11G

Abstract: MX29GL512FHMI-10Q
Contextual Info: MX29GL512F H/L-70SSOP MX29GL512F H/L 70 SSOP DATASHEET P/N:PM1673 REV. 1.2, JAN. 06, 2012 1 MX29GL512F H/L-70SSOP SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • 2.7 to 3.6 volt for read, erase, and program operations • Byte/Word mode switchable

Contextual Info: MX29LA640E H/L 64M-BIT [4M x 16/8M x 8] CMOS EQUAL SECTOR FLASH MEMORY FEATURES GENERAL FEATURES • 8M Bytes/4M Words switchable • 128 Equal Sectors with 64K Bytes 32K words each - Any combination of sectors can be erased with erase suspend/resume function

MX29GL256F

Abstract: MX29GL256FHT2I-90Q MX29GL256FLT2I-90Q TSOP 62 Package MX29GL256FLT2i
Contextual Info: MX29GL256F MX29GL256F DATASHEET P/N:PM1544 REV. 1.3, JAN. 12, 2012 1 MX29GL256F Contents FEATURES. 5

MX29GL256FHT

Abstract: MX29GL256FH
Contextual Info: MX29GL256F MX29GL256F DATASHEET ADVANCED INFORMATION MX29GL256F SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - MX29GL256F H/L: VI/O=VCC=2.7V~3.6V, VI/O voltage must tight with VCC

MX29GA257F

Abstract: MX29GA256F JESD47E Q0-Q15 MX29GA MX29GA256FL MXIC MX MX29GA257 MX29GA256F/MX29GA257F
Contextual Info: MX29GA256F H/L MX29GA257F H/L MX29GA256F/MX29GA257F DATASHEET P/N:PM1649 REV. 1.0, AUG. 08, 2011 1 MX29GA256F H/L MX29GA257F H/L Contents FEATURES. 5

Contextual Info: MX29GL512E H/L MX29GL512E H/L DATASHEET The MX29GL512E product family is not recommended for new designs. The MX29GL512F family is the recommended replacement. Please refer to MX29GL512F datasheet for full specifications and ordering information, or contact your local sales representative for

Contextual Info: MX29GL128F MX29GL128F DATASHEET P/N:PM1683 REV. 1.4, OCT. 30, 2013 1 MX29GL128F Contents FEATURES. 5

Contextual Info: MX68GL1G0F MX68GL1G0F DATASHEET P/N:PM1727 REV. 1.3, OCT. 30, 2013 1 MX68GL1G0F Contents 1. FEATURES. 5

MX29GL256

Abstract: MX29GL256E MX29GL128 mx29gl128eh MX29GL128EL MX29GL128elt2i-90g MX29GL256ELT2I MX29GL256ELT2I-90Q MX29GL128E MX29GL256EHT2I-90Q
Contextual Info: MX29GL256E H/L MX29GL128E H/L MX29GL256E/128E H/L DATASHEET P/N:PM1435 REV. 0.03, MAR. 06, 2009 1 PRELIMINARY MX29GL256E H/L MX29GL128E H/L SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations

mx29gl640

Abstract: MX29GL640EB MX29GL640E MX29GL640EHT2I-90G SA97 A0-A21 Q0-Q15 MX29GL640E USPB
Contextual Info: MX29GL640E T/B MX29GL640E H/L MX29GL640E T/B, MX29GL640E H/L DATASHEET P/N:PM1494 REV. 1.0, AUG. 28, 2009 1 MX29GL640E T/B MX29GL640E H/L FEATURES SINGLE VOLTAGE 3V ONLY FLASH MEMORY GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations

Contextual Info: MX29GL640E T/B MX29GL640E H/L MX29GL640E T/B, MX29GL640E H/L DATASHEET P/N:PM1494 REV. 0.01, JUN. 30, 2009 1 PRELIMINARY MX29GL640E T/B MX29GL640E H/L FEATURES SINGLE VOLTAGE 3V ONLY FLASH MEMORY GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations

MX29GL512

Abstract: MX29GL512FHT MX29GL512FUXFI-12G MX29GL512FHXFI-11 MX29GL512FLT2 Q8-Q14
Contextual Info: MX29GL512F MX29GL512F DATASHEET P/N:PM1617 REV. 1.4, JUL. 31, 2012 1 MX29GL512F Contents FEATURES. 5

Contextual Info: MX29GL128E MX29GL128E DATASHEET P/N:PM1500 REV. 1.3, MAR. 08, 2011 1 MX29GL128E SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - MX29GL128E H/L: VI/O=VCC=2.7V~3.6V, VI/O voltage must tight with VCC

SA247

Contextual Info: MX29GL256F MX29GL256F DATASHEET P/N:PM1544 REV. 0.00, DEC. 10, 2009 1 ADVANCED INFORMATION MX29GL256F SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - MX29GL256F H/L: VI/O=VCC=2.7V~3.6V, VI/O voltage must tight with VCC

MX29GL128E

Abstract: MX29GL128E USPB MX29GL128eh
Contextual Info: MX29GL128E H/L MX29GL128E H/L DATASHEET P/N:PM1500 REV. 1.0, APR. 28, 2009 1 MX29GL128E H/L SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - V I/O voltage must tight with VCC

MX29GL640E

Abstract: MX29GL640E USPB
Contextual Info: MX29GL640E T/B MX29GL640E H/L MX29GL640E T/B, MX29GL640E H/L DATASHEET P/N:PM1494 REV. 0.00, MAR. 24, 2009 1 ADVANCED INFORMATION MX29GL640E T/B MX29GL640E H/L FEATURES SINGLE VOLTAGE 3V ONLY FLASH MEMORY GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations

MX29GL256FHT2I-90Q

Abstract: MX29GL256F MX29GL256FLT2I-90Q 29GL256F MX29GL256FUXFI-11G PM1544 MX29GL256FLXFI-90Q MX29GL256FHT
Contextual Info: MX29GL256F MX29GL256F DATASHEET P/N:PM1544 REV. 1.2, OCT. 28, 2011 1 MX29GL256F Contents FEATURES. 5

A910

Abstract: mx68gl1g0 MX68GL1G0FHMI-11G
Contextual Info: MX68GL1G0F H/L-70SSOP MX68GL1G0F H/L 70SSOP DATASHEET P/N:PM1750 REV. 0.00, AUG. 23, 2011 1 MX68GL1G0F H/L-70SSOP Contents 1. FEATURES. 6

MX29GL640E

Abstract: mx29gl640eb MX29GL640E USPB MX29GL640EBXEI-70G mx29gl640
Contextual Info: MX29GL640E T/B MX29GL640E H/L MX29GL640E T/B, MX29GL640E H/L DATASHEET P/N:PM1494 REV. 1.4, DEC. 27, 2011 1 MX29GL640E T/B MX29GL640E H/L Contents FEATURES. 5