ST24164
Abstract: ST25164 b2416 MSO8
Text: ST24164 ST25164 16Kb x8 SERIAL EEPROM DATA BRIEFING 1 MILLION ERASE/WRITE CYCLES with OVER 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: – 4.5V to 5.5V for ST24164 version – 2.5V to 5.5V for ST25164 version HARDWARE WRITE CONTROL PIN TWO WIRE SERIAL INTERFACE
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ST24164
ST25164
ST24164
ST25164
150mil
ST24/25164
AI01249
b2416
MSO8
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ST24164
Abstract: AN404 M24164 ST25164 ST2416
Text: ST24164 ST25164 16Kb x8 SERIAL EEPROM NOT FOR NEW DESIGN 1 MILLION ERASE/WRITE CYCLES with OVER 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: – 4.5V to 5.5V for ST24164 version – 2.5V to 5.5V for ST25164 version HARDWARE WRITE CONTROL PIN TWO WIRE SERIAL INTERFACE
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ST24164
ST25164
ST24164
ST25164
M24164
150mil
ST24/25164
AN404
M24164
ST2416
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Untitled
Abstract: No abstract text available
Text: ST24164 ST25164 SERIAL 16K 2K x 8 EEPROM DATA BRIEFING 1 MILLION ERASE/WRITE CYCLES with OVER 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: – 4.5V to 5.5V for ST24164 version – 2.5V to 5.5V for ST25164 version HARDWARE WRITE CONTROL PIN TWO WIRE SERIAL INTERFACE
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ST24164
ST25164
ST25164
150mil
ST24/25164
AI01249
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AN404
Abstract: ST24164 ST25164
Text: ST24164 ST25164 SERIAL 16K 2K x 8 EEPROM 1 MILLION ERASE/WRITE CYCLES with OVER 10 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: – 4.5V to 5.5V for ST24164 version – 2.5V to 5.5V for ST25164 version HARDWARE WRITE CONTROL PIN TWO WIRE SERIAL INTERFACE
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ST24164
ST25164
ST24164
ST25164
ST24/25164
AN404
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ST24164
Abstract: No abstract text available
Text: ST24164 ST25164 SERIAL 16K 2K x 8 EEPROM 1 MILLION ERASE/WRITE CYCLES with OVER 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: – 4.5V to 5.5V for ST24164 version – 2.5V to 5.5V for ST25164 version HARDWARE WRITE CONTROL PIN TWO WIRE SERIAL INTERFACE
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ST24164
ST25164
ST25164
150mil
ST24/25164
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TSOP40 Flash
Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
Text: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS
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M2716
M2732A
M2764A
M27128A
M27256
M27512
450ns,
TSOP40 Flash
m48z32y
M27V512
FDIP24W
M27128A
M2716
M27256
M2732A
M27512
M2764A
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FDIP24W
Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
Text: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS
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M2716
450ns,
FDIP24W
M2732A
M2764A
FDIP28W
M27C64A
FDIP24W
M27128A
M2716
M27256
M2732A
M27512
M2764A
M27C256B
M27C64A
M29F040
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TOP SIDE MARKING M27C512
Abstract: No abstract text available
Text: QUALITY & RELIABILITY REPORT October 1995 to September 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8
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M27C512 SGS-THOMSON
Abstract: M2201 ST93C46
Text: QUALITY & RELIABILITY REPORT July 1995 to June 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8
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ST24C02
Abstract: ST24C08 m24c02 ST24W02 equivalent AN995 ST24C01 ST24C04 ST24W01 M24C32-W ST24W04
Text: AN995 APPLICATION NOTE Changing from the ST24xxx and ST25xxx to the M24xxx In Your Application This document is written for users of the ranges of EEPROM device shown in Table 1. Table 1. ST24xxx and ST25xxx Devices VCC = 3.0 to 5.5 V VCC = 2.5 to 5.5 V ST24C01
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AN995
ST24xxx
ST25xxx
M24xxx
ST24C01
ST24W01
ST25C01
ST25W01
ST24C02
ST24C08
m24c02
ST24W02 equivalent
AN995
ST24C01
ST24C04
ST24W01
M24C32-W
ST24W04
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Untitled
Abstract: No abstract text available
Text: QUALITY & RELIABILITY REPORT April 1995 to March 1996 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8
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asm eagle
Abstract: M28F101 M28F102 M28F201 M28F256 M28F512 texas 4mb dram M27C1024 Parallel NOR Flash Market MBX860
Text: MEMORY SELECTOR Leading Edge Memories Index page Leading Edge Memories 1 Why a Broad Range? 2 Technology, Upgrades and Quality 6 Flash Memories: application flexibility 8 EEPROM and ASM: higher performance 10 OTP and UV EPROM: dependable solutions 14 Non-Volatile RAM:
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BRMEMSEL/0997
asm eagle
M28F101
M28F102
M28F201
M28F256
M28F512
texas 4mb dram
M27C1024
Parallel NOR Flash Market
MBX860
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Replacement for
Abstract: AN995 ST24W01 ST24C01 ST24C02 ST24C04 ST24C08 ST24W02 ST24W04 ST24W08
Text: AN995 APPLICATION NOTE Changing from the ST24xxx and ST25xxx to the M24xxx In Your Application This document is written for users of the ranges of EEPROM device shown in Table 1. Table 1. ST24xxx and ST25xxx Devices VCC = 3.0 to 5.5 V VCC = 2.5 to 5.5 V ST24C01
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AN995
ST24xxx
ST25xxx
M24xxx
ST24C01
ST24W01
ST25C01
ST25W01
Replacement for
AN995
ST24W01
ST24C01
ST24C02
ST24C04
ST24C08
ST24W02
ST24W04
ST24W08
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TOP SIDE MARKING M27C512
Abstract: m27c512 equivalent 4Q96 M27128A M2716 M2732A M2764A QRR037 4Q96-1Q97 M27C256B datecode
Text: QUALITY & RELIABILITY REPORT April 1996 to March 1997 - EPROM, FLASH Memory, EEPROM and SRAM Products INTRODUCTION SGS-THOMSON manufactures a wide range of memory types which include: Non-volatile memories: FLASH Memory, UV EPROM, OTP EPROM and EEPROMs. EPROM products are manufactured in both 1.5µ NMOS and 0.8
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QRR037/0697
TOP SIDE MARKING M27C512
m27c512 equivalent
4Q96
M27128A
M2716
M2732A
M2764A
QRR037
4Q96-1Q97
M27C256B datecode
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ST24C16
Abstract: AN995 ST24C01 ST24C02 ST24C04 ST24C08 ST24W01 ST24W02 ST24W04 ST24W08
Text: AN995 APPLICATION NOTE Replacing ST24xxx and ST25xxx by M24xxx Devices This document is written for users of the following ranges of EEPROM device: Table 1. Discontinued Ranges Vcc = 4.5 to 5.5 V Vcc = 2.5 to 5.5 V ST24C01 ST24W01 ST25C01 ST25W01 ST24C02 ST24W02
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AN995
ST24xxx
ST25xxx
M24xxx
ST24W01
ST25C01
ST25W01
ST24C02
ST24W02
ST25C02
ST24C16
AN995
ST24C01
ST24C02
ST24C04
ST24C08
ST24W01
ST24W02
ST24W04
ST24W08
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ST24164
Abstract: AN404 ST24 ST25 ST25164
Text: r z T S G S -T H O M S O N ST24164 * 7 #» E » l g » IlL iO T ( ò K ! lD ( g i ST25164 SERIAL ACCESS 16K (2K x 8) EEPROM • 1 MILLION ERASE/W RiTE CYCLES with OVER 10 YEA RS DATA RETENTION ■ SINGLE SUPPLY VOLTAGE: - 4.5V to 5.5V for ST24164 version
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PDF
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ST24164
ST25164
ST25164version
ST24/25164
ST24164,
7T2T237
AN404
ST24
ST25
ST25164
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MDAB
Abstract: 24164s
Text: /= T ^7# S T 24164 ST25164 S G S -T H O M S O N [* ^ Q [i[L i(§ ¥ ^ @ [* S SERIAL ACCESS CMOS 16K (2048 x 8) EEPROMs • MINIMUM 1 MILLION ERASE/WRITE CYCLES with OVER 10 YEARS DATA RETENTION « SINGLE SUPPLY VOLTAGE: - 3V to 5.5V for ST24164 version
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OCR Scan
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PDF
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ST25164
ST24164
ST25164
ST24/25164
ST24164D
MDAB
24164s
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Untitled
Abstract: No abstract text available
Text: ST24164 ST25164 SGS-THOMSON HDM [iL[i g»Kl S 16Kb (x8) SERIAL EEPROM NOT FOR NEW DESIGN • 1 MILLION ERASE/WRITE CYCLES with OVER 40 YEARS DATA RETENTION ■ SINGLE SUPPLY VOLTAGE: - 4.5V to 5.5V tor ST24164 version - 2.5V to 5.5V tor ST25164 version ■ HARDWARE WRITE CONTROL PIN
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OCR Scan
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PDF
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ST24164
ST25164
ST25164
M24164
150mil
ST24/25164
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Untitled
Abstract: No abstract text available
Text: / T T S G S -T H O M S O N ^ 7 # . M O lM ilL IIM S IM K g i ST24164 S T25164 SERIAL 16K 2K x 8 EEPROM • 1 MILLION ERASE/WRITE CYCLES with OVER 40 YEARS DATA RETENTION ■ SINGLE SUPPLY VOLTAGE: - 4.5V to 5.5V for ST24164 version - 2.5V to 5.5V for ST25164 version
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OCR Scan
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PDF
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ST24164
T25164
ST24164
ST25164
150mil
ST24/25164
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Untitled
Abstract: No abstract text available
Text: rZ J * 7 # . ST24164 ST25164 S G S -T H O M S O N H D W lllL iM S ia ig i SERIAL ACCESS 16K 2K x 8 EEPROM • 1 MILLION ERASE/WRiTE CYCLES with OVER 10 YEARS DATA RETENTION ■ SINGLE SUPPLY VOLTAGE: - 4.5V to 5.5V for ST24164 version - 2.5V to 5.5V for ST25164 version
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OCR Scan
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PDF
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ST24164
ST25164
ST24164
ST25164
ST24/25164
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ST24164
Abstract: FZJ 165 AN404 ST24 ST25 ST25164
Text: rz y ^ / # ST24164 ST25164 S G S -T H O M S O N K iilD g lS ilL E © T K ( B R !lD ( g S SERIAL 16K (2K x 8) EEPROM • 1 MILLION ERASE/WRITE CYCLES with OVER 40 YEARS DATA RETENTION ■ SINGLE SUPPLY VOLTAGE: - 4.5V to 5.5V for ST24164 version - 2.5V to 5.5V for ST25164 version
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PDF
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ST24164
ST25164
ST25164
150mil
ST24/25164
CMOS00
ST24164,
FZJ 165
AN404
ST24
ST25
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON ^ 7 # ST24164 ST25164 K!ilD S lllLI©DTW!lll©i 16Kb x8 SERIAL EEPROM NOT FOR NEW DESIGN • 1 MILLION ERASE/WRITE CYCLES with OVER 40 YEARS DATA RETENTION ■ SINGLE SUPPLY VOLTAGE: - 4.5V to 5.5V for ST24164 version - 2.5V to 5.5V for ST25164 version
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OCR Scan
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PDF
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ST24164
ST25164
ST24164
ST25164
M24164
ST24/25164
ST24164,
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TDA0161 equivalent
Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:
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OCR Scan
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MK45H14
Abstract: AN-211 mk48c02 M48Z09 M48Z19 ST16XY ST16xyz M48Z32Y MK45h04 M/MCMA140P1600TA
Text: GENERAL INDEX C M O S UV EPR O M & OTP M EM O R IE S . M27C64A C M O S 64K 8K x 8 UV E P R O M . 57 55 M27C256B C M O S 256K (32K x 8) UV EPRO M & OTP R O M .
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M27C64A
M27C256B
M87C257
M27C512
M27V512
M27C1001
M27V101
M27C1024
M27C2001
M27V201
MK45H14
AN-211
mk48c02
M48Z09
M48Z19
ST16XY
ST16xyz
M48Z32Y
MK45h04
M/MCMA140P1600TA
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