Untitled
Abstract: No abstract text available
Text: STK14N05 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)20 I(D) Max. (A)14# I(DM) Max. (A) Pulsed I(D)10 @Temp (øC)100# IDM Max (@25øC Amb)56 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)50# Minimum Operating Temp (øC)
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STK14N05
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STK14N05
Abstract: STK14N06 diode AR s1 56 P032B
Text: STK14N05 STK14N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V DSS R DS on ID STK14N05 50 V < 0.12 Ω 14 A STK14N06 60 V < 0.12 Ω 14 A • ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED
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STK14N05
STK14N06
100oC
175oC
OT-82
OT-194
STK14N06
diode AR s1 56
P032B
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YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509
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2N7000
2N7002
2SJ377
2SJ378
2SJ380
2SJ401
2SJ402
2SJ407
2SJ412
2SJ419
YTA630
MTW14P20
BSS125
MTAJ30N06HD
2SK2837 equivalent
SMU10P05
SMP60N06 replacement
STE180N10
RFH75N05E
IRFD620
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STK14N06
Abstract: No abstract text available
Text: S G S - T H O M ¿ 5 S T K 14N05 S T K 14N06 S O N ¡m e ra « 7 N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR PRELIMINARY DATA TYP E V R D S o n dss STK14N05 50 V < 0.12 STK14N06 60 V 0.12 < Id a a 14 A 14 A • TYPICAL RDS(on) = 0.1 Q
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14N05
14N06
STK14N05
STK14N06
STK14N05/STK14N06
OT-194
P032B
STK14N06
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14N05
Abstract: BR03 TK14N GCJ4360
Text: STK14N05 STK14N06 SGS-THOMSON iL[IOT g «§ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE Voss RDS(on) Id STK14N 05 50 V 0 .1 2 Ü 14 A 60 V 0.12 £2 14 A STK14N 06 ! r AVALANCHE RUGGEDNESS TECHNOLOGY , 100% AVALANCHE TESTED , REPETITIVE AVALANCHE DATA AT 100°C
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STK14N05
STK14N06
STK14N
OT-82
OT-194
STK14N05/STK14N06
GC344
14N05
BR03
TK14N
GCJ4360
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TDA0161 equivalent
Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:
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K14N05
Abstract: 4N06 4N05
Text: *57 s t k 1 4N o5 S T K 1 4 N 06 S G S -T H O M S O N ilLHCTIIMDe N - CHANNEL ENHANCEMENT MODE _ POWER MQS TRANSISTOR PRELI MI NARY DATA T YPE V dss R DS on Id STK14N 05 50 V < 0.12 a 14 A STK14N 06 60 V < 0.12 £2 14 A • . ■ ■ . ■ ■ .
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STK14N
K14N05
4N06
4N05
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TSD45N50V
Abstract: TSD40N55V TSD33N50V TSD23N50V TSD30N60V TSD180N10V TSD160N05V TSD14N100V TSD4M450V TSD22N80V
Text: SELECTION GUIDE - BY PACKAGE ISOTOP 4 3 ? V BR DSS (V) R DS(on) ( m ax Id (A) Type (12) gis m in (S) Ciss m ax (pF) 7000 7000 7000 8100 18.0 400 310 8.0 8.0 5.0 9.0 9.0 30.0 40.0 400 500 15.0 28.0 8100 12000 * 45.0 45.0 500 500 350 28.0 28.0 28.0 12000
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STP30N05
BUZ11A
STP25N05
BUZ10
STLT29
BUZ71
IRFZ20
BUZ71A
STP17N
STLT19
TSD45N50V
TSD40N55V
TSD33N50V
TSD23N50V
TSD30N60V
TSD180N10V
TSD160N05V
TSD14N100V
TSD4M450V
TSD22N80V
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