tp3055

Abstract: MTP3055EFI TP3055E MTP3055E TP3055EFI
Contextual Info: Gì SCS-THOMSON MTP3055E MTP3055EFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE MTP3055E M TP3055EFI V d ss R o S on Id 60 V 60 V 0.1 5 Q 0.15 Si 14 A 10 A AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

Contextual Info: SGS-THOMSON BUZ71A BUZ71AFI M N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V dss R d S on Id BUZ71A BUZ71 AFI 50 V 50 V 0.1 2 il 0.1 2 Q 16 A 11 A . • . . . ■ . AVALANCHE RU G G EDN ESS TECHNO LO G Y 100% AVALANCHE TESTED REPETITIVE AVALANC HE DATA AT 100°C

14N05

Abstract: BR03 TK14N GCJ4360
Contextual Info: STK14N05 STK14N06 SGS-THOMSON iL[IOT g «§ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR PRELIMINARY DATA TYPE Voss RDS(on) Id STK14N 05 50 V 0 .1 2 Ü 14 A 60 V 0.12 £2 14 A STK14N 06 ! r AVALANCHE RUGGEDNESS TECHNOLOGY , 100% AVALANCHE TESTED , REPETITIVE AVALANCHE DATA AT 100°C