Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    STP20N10LFI Search Results

    STP20N10LFI Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STP20N10LFI STMicroelectronics OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN Original PDF
    STP20N10LFI STMicroelectronics N-Channel Enhancement Mode Low Threshold Power MOS Transistor Original PDF
    STP20N10LFI Toshiba Power MOSFETs Cross Reference Guide Original PDF
    STP20N10LFI Unknown Shortform Datasheet & Cross References Data Short Form PDF

    STP20N10LFI Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    STP20N10L

    Abstract: STP20N10LFI
    Text: STP20N10L STP20N10LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP20N10L STP20N10LFI • ■ ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 100 V 100 V < 0.12 Ω < 0.12 Ω 20 A 12 A TYPICAL RDS(on) = 0.09 Ω AVALANCHE RUGGED TECHNOLOGY


    Original     		PDF STP20N10L STP20N10LFI 100oC 175oC O-220 STP20N10L STP20N10LFI

    ISO-WATT220

    Abstract: STP20N10L STP20N10LFI
    Text: STP20N10L STP20N10LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP20N10L STP20N10LFI VDSS R DS on ID 100 V 100 V < 0.12 Ω < 0.12 Ω 20 A 12 A TYPICAL RDS(on) = 0.09 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC


    Original     		PDF STP20N10L STP20N10LFI 100oC 175oC O-220 ISO-WATT220 STP20N10L STP20N10LFI

    STP20N10L

    Abstract: STP20N10LFI
    Text: STP20N10L STP20N10LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP20N10L STP20N10LFI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V 100 V < 0.12 Ω < 0.12 Ω 20 A 12 A TYPICAL RDS(on) = 0.09 Ω AVALANCHE RUGGED TECHNOLOGY


    Original     		PDF STP20N10L STP20N10LFI 100oC 175oC O-220e STP20N10L STP20N10LFI

    STP20N10L

    Abstract: STP20N10LFI
    Text: STP20N10L STP20N10LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP20N10L STP20N10LFI • ■ ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V 100 V < 0.12 Ω < 0.12 Ω 20 A 12 A TYPICAL RDS(on) = 0.09 Ω AVALANCHE RUGGED TECHNOLOGY


    Original     		PDF STP20N10L STP20N10LFI 100oC 175oC O-220 STP20N10L STP20N10LFI

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		PDF 5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original     		PDF 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 YTA630 MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620

    Untitled

    Abstract: No abstract text available
    Text: ¿57 TYP E STP20N 10L S TP20N10LFI SGS-THOMSON ¡m era « STP20N10L STP20N10LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR V dss RDS on Id 100 V 100 V < 0.12 a < 0.12 a 20 A 12 A • TYPICAL RDS(on) = 0.09 Q . . AVALANCHE RUGGED TECHNOLOGY


    OCR Scan     		PDF STP20N TP20N10LFI STP20N10L STP20N10LFI ISOWATT220

    20N10L

    Abstract: TP20N IO832
    Text: STP20N10L STP20N10LFI SCS-THOMSON E T / in e N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STP 20N 10L S TP20N 10LFI . • . ■ . . . V dss R dsíoü Id 100 V 100 V 0 .1 2 n 0 .1 2 a 20 A 12 A AVALANCHE RUGGEDNESS TECHNOLOGY


    OCR Scan     		PDF STP20N10L STP20N10LFI TP20N 10LFI O-220 ISOWATT220 STP20N STP20N1 20N10L IO832

    100VDS

    Abstract: No abstract text available
    Text: * 5 S G S -T H O M S O N ilLHCTIKMDe 7 2o n io l STP20N1OLFI s t p N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP20N10L STP20N10LFI V dss R DS on Id 100 V 100 V < 0.12 a < 0.12 a 20 A 12 A • TYPICAL RDS(on) = 0.09 Q . . ■ ■


    OCR Scan     		PDF STP20N1OLFI STP20N10L STP20N10LFI 100VDS

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		PDF

    TSD45N50V

    Abstract: TSD40N55V TSD33N50V TSD23N50V TSD30N60V TSD180N10V TSD160N05V TSD14N100V TSD4M450V TSD22N80V
    Text: SELECTION GUIDE - BY PACKAGE ISOTOP 4 3 ? V BR DSS (V) R DS(on) ( m ax Id (A) Type (12) gis m in (S) Ciss m ax (pF) 7000 7000 7000 8100 18.0 400 310 8.0 8.0 5.0 9.0 9.0 30.0 40.0 400 500 15.0 28.0 8100 12000 * 45.0 45.0 500 500 350 28.0 28.0 28.0 12000


    OCR Scan     		PDF STP30N05 BUZ11A STP25N05 BUZ10 STLT29 BUZ71 IRFZ20 BUZ71A STP17N STLT19 TSD45N50V TSD40N55V TSD33N50V TSD23N50V TSD30N60V TSD180N10V TSD160N05V TSD14N100V TSD4M450V TSD22N80V