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    Vishay Siliconix SI1403CDL-T1-GE3

    MOSFET P-CH 20V 2.1A SC70-6
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    DigiKey SI1403CDL-T1-GE3 Reel
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    Vishay Intertechnologies SLNSI1403CDL-T1-GE3

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    Bristol Electronics SLNSI1403CDL-T1-GE3 2,699
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    Vishay Intertechnologies SI1403CDL-T1-GE3

    Transistor: P-MOSFET; unipolar; -20V; -1.6A; 0.6W; SC70-6
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    TME SI1403CDL-T1-GE3 3
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    SI1403CDL Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SI1403CDL-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 2.1A SC-70-6 Original PDF

    SI1403CDL Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Si1403CDL Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)c RDS(on) () - 20 0.140 at VGS = - 4.5 V - 2.1 0.160 at VGS = - 3.6 V - 1.9 0.222 at VGS = - 2.5 V - 1.6 Qg (Typ.) 4 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si1403CDL 2002/95/EC OT-363 SC-70 Si1403CDL-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si1403CDL Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)c 0.140 at VGS = - 4.5 V - 2.1 0.160 at VGS = - 3.6 V - 1.9 0.222 at VGS = - 2.5 V - 1.6 VDS (V) - 20 Qg (Typ.) 4 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si1403CDL 2002/95/EC OT-363 SC-70 Si1403CDL-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    si1403cdl

    Abstract: No abstract text available
    Text: SPICE Device Model Si1403CDL Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si1403CDL 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si1403CDL Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)c 0.140 at VGS = - 4.5 V - 2.1 0.160 at VGS = - 3.6 V - 1.9 0.222 at VGS = - 2.5 V - 1.6 VDS (V) - 20 Qg (Typ.) 4 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si1403CDL 2002/95/EC OT-363 SC-70 Si1403CDL-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si1403CDL Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)c 0.140 at VGS = - 4.5 V - 2.1 0.160 at VGS = - 3.6 V - 1.9 0.222 at VGS = - 2.5 V - 1.6 VDS (V) - 20 Qg (Typ.) 4 nC • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si1403CDL 2002/95/EC OT-363 SC-70 Si1403CDL-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    SI1403BDL-T1-E3

    Abstract: si1403cdl
    Text: Specification Comparison Vishay Siliconix Si1403CDL vs. Si1403BDL Description: Package: Pin Out: P-Channel, 20 V D-S MOSFET SC70-6 Identical Part Number Replacements: Si1403CDL-T1-GE3 replaces Si1403BDL-T1-E3 Si1403CDL-T1-GE3 replaces Si1403BDL-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)


    Original     		PDF Si1403CDL Si1403BDL SC70-6 Si1403CDL-T1-GE3 Si1403BDL-T1-E3 Si1403BDL-T1-GE3

    Untitled

    Abstract: No abstract text available
    Text: Si1403CDL_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si1403CDL AN609, 0955u 5995m 0846m 5241u 0460m 4566m 8508m

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si1403CDL www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF Si1403CDL 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836