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Vishay Siliconix SI2311DS-T1-E3 MOSFET P-CH 8V 3A SOT23-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI2311DS-T1-E3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.32846	Buy Now
Vishay Siliconix SI2311DS-T1-GE3 MOSFET P-CH 8V 3A SOT23-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI2311DS-T1-GE3	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.3199	Buy Now

SI2311DS Datasheets (5)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
Si2311DS		Vishay Intertechnology	P-Channel 1.8-V (G-S) MOSFET		Original	PDF
SI2311DS		Vishay Siliconix	P-Channel 1.8-V (G-S) MOSFET		Original	PDF
Si2311DS SPICE Device Model		Vishay	P-Channel 1.8-V (G-S) MOSFET		Original	PDF
SI2311DS-T1-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 3A SOT23		Original	PDF
SI2311DS-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 3A SOT23		Original	PDF

SI2311DS Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
AN609 Abstract: Si2311DS Text: Si2311DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si2311DS AN609 03-May-07	PDF
Untitled Abstract: No abstract text available Text: Si2311DS Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 3.5 -8 0.072 at VGS = - 2.5 V - 2.8 0.120 at VGS = - 1.8 V - 2.0 • Halogen-free Option Available • TrenchFET Power MOSFET	Original	Si2311DS O-236 OT-23) Si2311DS-T1-E3 Si2311DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.	PDF
Untitled Abstract: No abstract text available Text: Si2311DS Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 3.5 -8 0.072 at VGS = - 2.5 V - 2.8 0.120 at VGS = - 1.8 V - 2.0 • Halogen-free Option Available • TrenchFET Power MOSFET	Original	Si2311DS O-236 OT-23) Si2311DS-T1-E3 Si2311DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A	PDF
Si2311DS Abstract: No abstract text available Text: Si2311DS New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –8 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.045 @ VGS = –4.5 V –3.5 0.072 @ VGS = –2.5 V –2.8 0.120 @ VGS = –1.8 V –2.0 APPLICATIONS D Load Switch	Original	Si2311DS O-236 OT-23) S-05831--Rev. 04-Mar-02	PDF
Si2311DS Abstract: No abstract text available Text: SPICE Device Model Si2311DS Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si2311DS 18-Jul-08	PDF
Si2311DS Abstract: No abstract text available Text: SPICE Device Model Si2311DS Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si2311DS 28-May-02	PDF
Untitled Abstract: No abstract text available Text: Si2311DS New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –8 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.045 @ VGS = –4.5 V –3.5 0.072 @ VGS = –2.5 V –2.8 0.120 @ VGS = –1.8 V –2.0 APPLICATIONS D Load Switch	Original	Si2311DS O-236 OT-23) 08-Apr-05	PDF
Si2311DS Abstract: No abstract text available Text: Si2311DS Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 3.5 -8 0.072 at VGS = - 2.5 V - 2.8 0.120 at VGS = - 1.8 V - 2.0 • Halogen-free Option Available • TrenchFET Power MOSFET	Original	Si2311DS O-236 OT-23) Si2311DS-T1-E3 Si2311DS-T1-GE3 18-Jul-08	PDF
Si2311DS Abstract: No abstract text available Text: SPICE Device Model Si2311DS Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si2311DS S-50383Rev. 21-Mar-05	PDF
Arduino Mega2560 Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM	Original	CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l	PDF
Siliconix Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123	Original	2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent	PDF
GS 069 Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8 Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no	Original	Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8	PDF