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    SI2311DS Price and Stock

    Vishay Siliconix SI2311DS-T1-E3

    MOSFET P-CH 8V 3A SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI2311DS-T1-E3 Reel 3,000
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    • 10000 $0.28375
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    Vishay Siliconix SI2311DS-T1-GE3

    MOSFET P-CH 8V 3A SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI2311DS-T1-GE3 Reel 3,000
    • 1 -
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    • 10000 $0.2948
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    SI2311DS Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si2311DS Vishay Intertechnology P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI2311DS Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET Original PDF
    Si2311DS SPICE Device Model Vishay P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI2311DS-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 3A SOT23 Original PDF
    SI2311DS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 8V 3A SOT23 Original PDF

    SI2311DS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN609

    Abstract: Si2311DS
    Text: Si2311DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si2311DS AN609 03-May-07

    Untitled

    Abstract: No abstract text available
    Text: Si2311DS Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 3.5 -8 0.072 at VGS = - 2.5 V - 2.8 0.120 at VGS = - 1.8 V - 2.0 • Halogen-free Option Available • TrenchFET Power MOSFET


    Original     		PDF Si2311DS O-236 OT-23) Si2311DS-T1-E3 Si2311DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    Untitled

    Abstract: No abstract text available
    Text: Si2311DS Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 3.5 -8 0.072 at VGS = - 2.5 V - 2.8 0.120 at VGS = - 1.8 V - 2.0 • Halogen-free Option Available • TrenchFET Power MOSFET


    Original     		PDF Si2311DS O-236 OT-23) Si2311DS-T1-E3 Si2311DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    Si2311DS

    Abstract: No abstract text available
    Text: Si2311DS New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –8 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.045 @ VGS = –4.5 V –3.5 0.072 @ VGS = –2.5 V –2.8 0.120 @ VGS = –1.8 V –2.0 APPLICATIONS D Load Switch


    Original     		PDF Si2311DS O-236 OT-23) S-05831--Rev. 04-Mar-02

    Si2311DS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2311DS Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si2311DS 18-Jul-08

    Si2311DS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2311DS Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si2311DS 28-May-02

    Untitled

    Abstract: No abstract text available
    Text: Si2311DS New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) –8 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.045 @ VGS = –4.5 V –3.5 0.072 @ VGS = –2.5 V –2.8 0.120 @ VGS = –1.8 V –2.0 APPLICATIONS D Load Switch


    Original     		PDF Si2311DS O-236 OT-23) 08-Apr-05

    Si2311DS

    Abstract: No abstract text available
    Text: Si2311DS Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.045 at VGS = - 4.5 V - 3.5 -8 0.072 at VGS = - 2.5 V - 2.8 0.120 at VGS = - 1.8 V - 2.0 • Halogen-free Option Available • TrenchFET Power MOSFET


    Original     		PDF Si2311DS O-236 OT-23) Si2311DS-T1-E3 Si2311DS-T1-GE3 18-Jul-08

    Si2311DS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2311DS Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si2311DS S-50383Rev. 21-Mar-05

    Arduino Mega2560

    Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
    Text: ND3% BASE1 XXXX2108-0010-1-P 10 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 15-07-11 Hour: 13:07 TS:TS date TS time MCUS, MPUS, DSPS & DEVELOPMENT TOOLS Find Datasheets Online 8-BIT MCUS & DEVELOPMENT TOOLS 1 PSoC 3 DEVELOPMENT KITS ARDUINO MCU DEVLOPMENT PLATFORM


    Original     		PDF CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l

    Siliconix

    Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
    Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123


    Original     		PDF 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original     		PDF Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8