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    SI2324DS Price and Stock

    Vishay Siliconix SI2324DS-T1-GE3

    MOSFET N-CH 100V 2.3A SOT23-3
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    DigiKey SI2324DS-T1-GE3 Digi-Reel 43,900 1
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    SI2324DS-T1-GE3 Cut Tape 43,900 1
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    SI2324DS-T1-GE3 Reel 42,000 3,000
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    New Advantage Corporation SI2324DS-T1-GE3 12,000 1
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    Vishay Siliconix SI2324DS-T1-BE3

    MOSFET N-CH 100V 2.3A SOT-23
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    DigiKey SI2324DS-T1-BE3 Cut Tape 8,530 1
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    SI2324DS-T1-BE3 Digi-Reel 8,530 1
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    SI2324DS-T1-BE3 Reel 6,000 3,000
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    Vishay Intertechnologies SI2324DS-T1-BE3

    Transistor MOSFET N-Channel 100V 2.3A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2324DS-T1-BE3)
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    Avnet Americas SI2324DS-T1-BE3 Reel 3,000
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    Newark SI2324DS-T1-BE3 Reel 3,000
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    SI2324DS-T1-BE3 Cut Tape 3,000
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    Bristol Electronics SI2324DS-T1-BE3 5,700
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    TTI SI2324DS-T1-BE3 Reel 45,000 3,000
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    EBV Elektronik SI2324DS-T1-BE3 10 Weeks 3,000
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    Vishay Intertechnologies SI2324DS-T1-GE3

    Trans MOSFET N-CH 100V 1.6A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2324DS-T1-GE3)
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    Avnet Americas SI2324DS-T1-GE3 Reel 6 Weeks 3,000
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    Mouser Electronics SI2324DS-T1-GE3 46,232
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    Verical SI2324DS-T1-GE3 30,000 3,000
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    Arrow Electronics SI2324DS-T1-GE3 30,000 6 Weeks 3,000
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    SI2324DS-T1-GE3 Cut Strips 4 9 Weeks 1
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    Newark SI2324DS-T1-GE3 Cut Tape 3,587 5
    • 1 $0.446
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    SI2324DS-T1-GE3 Reel 3,000
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    TTI SI2324DS-T1-GE3 Reel 18,000 3,000
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    TME SI2324DS-T1-GE3 11,466 1
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    Avnet Asia SI2324DS-T1-GE3 8 Weeks 3,000
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    Chip1Stop SI2324DS-T1-GE3 30,000
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    SI2324DS-T1-GE3 4
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    EBV Elektronik SI2324DS-T1-GE3 7 Weeks 3,000
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    Vishay Huntington SI2324DS-T1-GE3

    Trans MOSFET N-CH 100V 2.3A 3-Pin SOT-23 T/R / MOSFET N-CH 100V 2.3A SOT-23
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SI2324DS-T1-GE3 180,800
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    SI2324DS Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI2324DS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 2.3A SOT-23 Original PDF

    SI2324DS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si2324DS www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF Si2324DS 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si2324DS Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.234 at VGS = 10 V 2.3 0.267 at VGS = 6 V 2.1 0.278 at VGS = 4.5 V 1.7 VDS (V) 100 Qg (Typ.) 2.9 nC • DC/DC Converters • Load Switch • LED Backlighting in LCD TVs


    Original     		PDF Si2324DS O-236 OT-23) Si2324DS-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A

    SI2324DS

    Abstract: Si2324DS-T1-GE3 si2324
    Text: Si2324DS Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.234 at VGS = 10 V 2.3 0.267 at VGS = 6 V 2.1 0.278 at VGS = 4.5 V 1.7 VDS (V) 100 Qg (Typ.) 2.9 nC • DC/DC Converters • Load Switch • LED Backlighting in LCD TVs


    Original     		PDF Si2324DS O-236 OT-23) Si2324DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si2324

    si2324

    Abstract: No abstract text available
    Text: Si2324DS Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.234 at VGS = 10 V 2.3 0.267 at VGS = 6 V 2.1 0.278 at VGS = 4.5 V 1.7 VDS (V) 100 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2324DS 2002/95/EC O-236 OT-23) Si2324DS-T1-GE3 11-Mar-11 si2324

    Untitled

    Abstract: No abstract text available
    Text: Si2324DS Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.234 at VGS = 10 V 2.3 0.267 at VGS = 6 V 2.1 0.278 at VGS = 4.5 V 1.7 VDS (V) 100 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si2324DS 2002/95/EC O-236 OT-23) Si2324DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU.

    si23

    Abstract: No abstract text available
    Text: SPICE Device Model Si2324DS Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si2324DS 11-Mar-11 si23

    si2324

    Abstract: No abstract text available
    Text: Si2324DS-GE3_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si2324DS-GE3 AN609, 8230u 2544m 7717m 5656u 7143m 9848m 6315m 01-Apr-11 si2324

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836