Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SI2335DS Search Results

    SF Impression Pixel

    SI2335DS Price and Stock

    Vishay Siliconix SI2335DS-T1-E3

    MOSFET P-CH 12V 3.2A SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI2335DS-T1-E3 Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    SI2335DS-T1-E3 Cut Tape
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now
    SI2335DS-T1-E3 Digi-Reel 1
    • 1 $0.72
    • 10 $0.72
    • 100 $0.72
    • 1000 $0.72
    • 10000 $0.72
    		Buy Now

    Vishay Siliconix SI2335DS-T1-GE3

    MOSFET P-CH 12V 3.2A SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI2335DS-T1-GE3 Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    SI2335DS Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si2335DS Vishay Intertechnology P-Channel 12-V (D-S) MOSFET Original PDF
    SI2335DS Vishay Siliconix MOSFETs Original PDF
    Si2335DS SPICE Device Model Vishay P-Channel 12-V (D-S) MOSFET Original PDF
    SI2335DS-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 3.2A SOT23 Original PDF
    SI2335DS-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 12V 3.2A SOT23-3 Original PDF

    SI2335DS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Si2335DS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2335DS P-Channel 12-V D-S MOSFET Characteristics • P-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse


    Original     		Si2335DS PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2335DS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.051 at VGS = - 4.5 V - 4.0 0.070 at VGS = - 2.5 V - 3.5 0.106 at VGS = - 1.8 V - 3.0 Available • TrenchFET Power MOSFETs: 1.8 V Rated


    Original     		Si2335DS O-236 OT-23) Si2335DS-T1-E3 Si2335DS-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2335DS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.051 at VGS = - 4.5 V - 4.0 0.070 at VGS = - 2.5 V - 3.5 0.106 at VGS = - 1.8 V - 3.0 Available • TrenchFET Power MOSFETs: 1.8 V Rated


    Original     		Si2335DS O-236 OT-23) Si2335DS-T1-E3 Si2335DS-T1-GE3 15electronic 2002/95/EC. 2002/95/EC 2011/65/EU. PDF

    Si2335DS

    Abstract: SI2335DS-T1-E3 E5 Marking
    Text: Si2335DS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.051 at VGS = - 4.5 V - 4.0 0.070 at VGS = - 2.5 V - 3.5 0.106 at VGS = - 1.8 V - 3.0 Available • TrenchFET Power MOSFETs: 1.8 V Rated


    Original     		Si2335DS O-236 OT-23) Si2335DS-T1-E3 Si2335DS-T1-GE3 11-Mar-11 E5 Marking PDF

    Untitled

    Abstract: No abstract text available
    Text: Si2335DS New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.051 @ VGS = –4.5 V –4.0 0.070 @ VGS = –2.5 V –3.5 0.106 @ VGS = –1.8 V –3.0 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2335DS (E5)*


    Original     		Si2335DS O-236 OT-23) 18-Jul-08 PDF

    Si2335DS

    Abstract: 1519b
    Text: SPICE Device Model Si2335DS Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si2335DS 13-Apr-01 1519b PDF

    AN609

    Abstract: Si2335DS
    Text: Si2335DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		Si2335DS AN609 04-May-07 PDF

    E5 marking

    Abstract: SI2335DS-T1-E3 02 jm Si2335DS
    Text: Si2335DS Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.051 at VGS = - 4.5 V - 4.0 0.070 at VGS = - 2.5 V - 3.5 0.106 at VGS = - 1.8 V - 3.0 Available • TrenchFET Power MOSFETs: 1.8 V Rated


    Original     		Si2335DS O-236 OT-23) Si2335DS-T1-E3 Si2335DS-T1-GE3 18-Jul-08 E5 marking 02 jm PDF

    E5 marking

    Abstract: Si2335DS E5* MARKING
    Text: Si2335DS New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.051 @ VGS = –4.5 V –4.0 0.070 @ VGS = –2.5 V –3.5 0.106 @ VGS = –1.8 V –3.0 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2335DS (E5)*


    Original     		Si2335DS O-236 OT-23) 08-Apr-05 E5 marking E5* MARKING PDF

    Si2335DS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2335DS Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si2335DS S-50383Rev. 21-Mar-05 PDF

    Si2335DS

    Abstract: No abstract text available
    Text: SPICE Device Model Si2335DS Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		Si2335DS 18-Jul-08 PDF

    E5 marking

    Abstract: Si2335DS
    Text: Si2335DS New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) ID (A) 0.051 @ VGS = –4.5 V –4.0 0.070 @ VGS = –2.5 V –3.5 0.106 @ VGS = –1.8 V –3.0 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2335DS (E5)*


    Original     		Si2335DS O-236 OT-23) S-02303--Rev. 23-Oct-00 E5 marking PDF

    EV2300

    Abstract: bq8012 bq80 SLUU159 SLUU159A bq8015dbt daishinku C1608C0G1H220KT C1608X7R1E104KT LN1371G
    Text: EV2300 Evaluation Module Interface Board User’s Guide February 2005 PMP EVMs SLUU159A IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue


    Original     		EV2300 SLUU159A EV2300 bq8012 bq80 SLUU159 SLUU159A bq8015dbt daishinku C1608C0G1H220KT C1608X7R1E104KT LN1371G PDF

    JDK105BJ475MV

    Abstract: MIPSZ20120D2R2 2510-6002UB MIPSZ2012 OMAP-L138 TMS320C6742 TMS320C6746 TMS320C6748 TPS62353 omapl138
    Text: Application Report SLVA339 – June 2009 High-Vin, High-Efficiency Power Solution Using DC/DC Converter With DVFS Ambreesh Tripathi . PMP - DC/DC Low-Power Converters ABSTRACT This reference design is intended for users designing with the TMS320C6742,


    Original     		SLVA339 TMS320C6742, TMS320C6746, TMS320C6748, OMAP-L138 JDK105BJ475MV MIPSZ20120D2R2 2510-6002UB MIPSZ2012 TMS320C6742 TMS320C6746 TMS320C6748 TPS62353 omapl138 PDF

    SP6126

    Abstract: 1N4148 MBRA340T3 MBRA340T3G Si2335DS Si2343DS Si4447DY
    Text: Solved by SP6126 TM High-Voltage, Step Down Controller in TSOT6 FEATURES Wide 4.5V – 29V Input Voltage Range Internal Compensation Built-in High Current PMOS Driver Adjustable Overcurrent Protection Internal soft-start 600kHz Constant Frequency Operation


    Original     		SP6126 600kHz SP6126 CA95035 SP6126: 1N4148 MBRA340T3 MBRA340T3G Si2335DS Si2343DS Si4447DY PDF

    bq8012

    Abstract: EV2300 crystal 3.2768 Mhz Battery connected Box ev2300 dbt38 TNPW06031 bq80 EEPROM MEMORY TO-92 FAIRCHILD C1608C0G1H222KT BQ8015
    Text: User's Guide SLUU159C – February 2005 – Revised January 2012 EV2300 EVM Interface Board This user's guide describes the function and operation of the EV2300 evaluation module. This guide includes a complete description of the EV2300 EVM, as well as a bill of materials, and schematic.


    Original     		SLUU159C EV2300 bq8012 crystal 3.2768 Mhz Battery connected Box ev2300 dbt38 TNPW06031 bq80 EEPROM MEMORY TO-92 FAIRCHILD C1608C0G1H222KT BQ8015 PDF

    STM9435

    Abstract: AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC
    Text: South Sea Semiconductor Cross Reference Guide Competitor SSS Competitor Part Number Part Number STU3055L2 APM2034NU ANPEC STU4030NL APM2512NU ANPEC STU4030NL APM3011NU ANPEC STU3030PL APM3020PU ANPEC APM3023N ANPEC STU3030NL APM4210K ANPEC SDM4410 APM4220K ANPEC


    Original     		STU3055L2 APM2034NU STU4030NL APM2512NU APM3011NU STU3030PL APM3020PU APM3023N STU3030NL STM9435 AP4411 ao3411 EQUIVALENT STM8405 AP40N03H AP4936M stm4532 FDD6685 AP9960M APEC PDF

    VN10KLS

    Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
    Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated


    Original     		Si4831DY Si4833DY Si4852DY Si4816DY 10Single VN50300L VN50300T OT-23 VN66AFD VN10KLS mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05 PDF

    Siliconix

    Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
    Text: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123


    Original     		2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123 BSS138 Siliconix Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent PDF

    semiconductor cross reference

    Abstract: AP40N03H STM8405 AP4411 AP60N03H ap4503M Fairchild Cross Reference ao3411 AO3401 cross reference anpec Cross Reference
    Text: South Sea Semiconductor Cross Reference Guide Competitor SSS Competitor Part Number Part Number STU3055L2 APM2034NU ANPEC STU4030NL APM2512NU ANPEC STU4030NL APM3011NU ANPEC STU3030PL APM3020PU ANPEC APM3023N ANPEC STU3030NL APM4210K ANPEC SDM4410 APM4220K ANPEC


    Original     		STU3055L2 APM2034NU STU4030NL APM2512NU APM3011NU STU3030PL APM3020PU APM3023N STU3030NL semiconductor cross reference AP40N03H STM8405 AP4411 AP60N03H ap4503M Fairchild Cross Reference ao3411 AO3401 cross reference anpec Cross Reference PDF

    DSX630G-12

    Abstract: No abstract text available
    Text: User's Guide SLUU159E – February 2005 – Revised May 2013 EV2300 EVM Interface Board This user's guide describes the function and operation of the EV2300 evaluation module. This guide includes a complete description of the EV2300 EVM, as well as a bill of materials, and schematic.


    Original     		SLUU159E EV2300 DSX630G-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: User's Guide SLUU399A – April 2010 – Revised March 2011 Thumbus2300 This users guide describes the function and operation of the Thumbus2300 evaluation module. A complete description, as well as schematic diagram and bill of materials are included.


    Original     		SLUU399A Thumbus2300 Thumbus2300â PDF

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Text: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original     		Si9165 Si9169 600-mA TSSOP-20 MSOP-10 SiP1759 GS 069 Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8 PDF

    C3216X7R-1C106MT

    Abstract: C3216X7R1C106MT DM365 TMS320DM365 TPS62111 TPS62231 TPS62290 NPN Transistor TO92 40V 200mA MIPSZ2012 JDK105BJ225
    Text: Application Report SLVA357 – August 2009 High-Vin, High-Efficiency Power Solution Using DC/DC Converter for the DM365 Ambreesh Tripathi . PMP - DC/DC Low Power Converters ABSTRACT This reference design is intended for users designing with theTMS320DM365


    Original     		SLVA357 DM365 theTMS320DM365 C3216X7R-1C106MT C3216X7R1C106MT DM365 TMS320DM365 TPS62111 TPS62231 TPS62290 NPN Transistor TO92 40V 200mA MIPSZ2012 JDK105BJ225 PDF