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    SI3932DV Search Results

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    SI3932DV Price and Stock

    Vishay Siliconix SI3932DV-T1-GE3

    MOSFET 2N-CH 30V 3.7A 6TSOP
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    DigiKey SI3932DV-T1-GE3 Cut Tape 34,813 1
    • 1 $0.95
    • 10 $0.594
    • 100 $0.95
    • 1000 $0.26866
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    SI3932DV-T1-GE3 Digi-Reel 34,813 1
    • 1 $0.95
    • 10 $0.594
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    • 1000 $0.26866
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    SI3932DV-T1-GE3 Reel 33,000 3,000
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    RS SI3932DV-T1-GE3 Bulk 3,000
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    New Advantage Corporation SI3932DV-T1-GE3 30,000 1
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    Vishay Intertechnologies SI3932DV-T1-GE3

    DUAL N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI3932DV-T1-GE3)
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    Avnet Americas SI3932DV-T1-GE3 Reel 18 Weeks 3,000
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    Mouser Electronics SI3932DV-T1-GE3 246,534
    • 1 $0.7
    • 10 $0.474
    • 100 $0.325
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    Newark SI3932DV-T1-GE3 Reel 3,000
    • 1 $0.264
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    • 10000 $0.239
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    SI3932DV-T1-GE3 Cut Tape 5
    • 1 $0.608
    • 10 $0.492
    • 100 $0.365
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    TTI SI3932DV-T1-GE3 Reel 9,000 3,000
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    Velocity Electronics SI3932DV-T1-GE3 1,309
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    Avnet Asia SI3932DV-T1-GE3 20 Weeks 3,000
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    EBV Elektronik SI3932DV-T1-GE3 19 Weeks 3,000
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    Vishay Huntington SI3932DV-T1-GE3

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    NexGen Digital SI3932DV-T1-GE3 12,000
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    Win Source Electronics SI3932DV-T1-GE3 5,780
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    SI3932DV Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI3932DV-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 3.7A 6-TSOP Original PDF

    SI3932DV Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AN609

    Abstract: Si3932DV si3932
    Text: Si3932DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		Si3932DV AN609, 02-Mar-10 AN609 si3932 PDF

    marking CODE MH

    Abstract: Si3932DV si3932 0642 SI3932DV-T1-GE3
    Text: New Product Si3932DV Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.058 at VGS = 10 V 3.7 0.073 at VGS = 4.5 V 3.3 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si3932DV 2002/95/EC Si3932DV-T1-GE3 18-Jul-08 marking CODE MH si3932 0642 PDF

    Si3932DV

    Abstract: No abstract text available
    Text: SPICE Device Model Si3932DV Vishay Siliconix Dual N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si3932DV 18-Jul-08 PDF

    si3932dv

    Abstract: No abstract text available
    Text: New Product Si3932DV Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.058 at VGS = 10 V 3.7 0.073 at VGS = 4.5 V 3.3 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si3932DV 2002/95/EC Si3932DV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si3932DV Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.058 at VGS = 10 V 3.7 0.073 at VGS = 4.5 V 3.3 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si3932DV 2002/95/EC Si3932DV-T1-GE3 18-Jul-08 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF