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    SI4160DY Search Results

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    SI4160DY Price and Stock

    Vishay Siliconix SI4160DY-T1-GE3

    MOSFET N-CH 30V 25.4A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4160DY-T1-GE3 Digi-Reel 2,494 1
    • 1 $1.9
    • 10 $1.207
    • 100 $1.9
    • 1000 $0.58971
    • 10000 $0.58971
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    SI4160DY-T1-GE3 Cut Tape 2,494 1
    • 1 $1.9
    • 10 $1.207
    • 100 $1.9
    • 1000 $0.58971
    • 10000 $0.58971
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    SI4160DY-T1-GE3 Reel 2,500
    • 1 -
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    • 10000 $0.53093
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    Vishay Intertechnologies SI4160DY-T1-GE3

    N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI4160DY-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI4160DY-T1-GE3 Reel 2,500 16 Weeks 2,500
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    • 10000 $0.46215
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    Mouser Electronics SI4160DY-T1-GE3 24,120
    • 1 $1.51
    • 10 $1.02
    • 100 $0.721
    • 1000 $0.557
    • 10000 $0.496
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    Newark SI4160DY-T1-GE3 Reel 2,500
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    • 10000 $0.519
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    SI4160DY-T1-GE3 Cut Tape 2,500
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    • 1000 $0.765
    • 10000 $0.765
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    Bristol Electronics SI4160DY-T1-GE3 3,916
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    SI4160DY-T1-GE3 140
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    Quest Components SI4160DY-T1-GE3 3,132
    • 1 $1.9535
    • 10 $1.9535
    • 100 $1.9535
    • 1000 $1.9535
    • 10000 $0.5861
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    TTI SI4160DY-T1-GE3 Reel 2,500
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    • 10000 $0.488
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    Avnet Asia SI4160DY-T1-GE3 19 Weeks 2,500
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    EBV Elektronik SI4160DY-T1-GE3 17 Weeks 2,500
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    Vishay Intertechnologies SI4160DY-T1-GE3.

    Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:25.4A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1V; Power Dissipation:5.7W; No. Of Pins:8Pins Rohs Compliant: Yes |Vishay SI4160DY-T1-GE3.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark SI4160DY-T1-GE3. Reel 2,500
    • 1 -
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    • 1000 -
    • 10000 $0.519
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    Vishay Huntington SI4160DY-T1-GE3

    MOSFET N-CH 30V 25.4A 8-SOIC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Win Source Electronics SI4160DY-T1-GE3 7,000
    • 1 -
    • 10 -
    • 100 $0.8349
    • 1000 $0.5567
    • 10000 $0.5567
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    SI4160DY Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4160DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 25.4A 8-SOIC Original PDF

    SI4160DY Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    4562 mosfet

    Abstract: M 3211 4562 AN609 13544
    Text: Si4160DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		Si4160DY AN609, 02-Dec-08 4562 mosfet M 3211 4562 AN609 13544 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4160DY www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		Si4160DY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4160DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0049 at VGS = 10 V 25.4 0.0063 at VGS = 4.5 V 22.4 • • • • Qg (Typ.) 16.9 nC Halogen-free According to IEC 61249-2-21 TrenchFET Power MOSFET


    Original     		Si4160DY Si4160DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Si4160DY-T1-GE3

    Abstract: si4160 69069
    Text: New Product Si4160DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0049 at VGS = 10 V 25.4 0.0063 at VGS = 4.5 V 22.4 • • • • Qg (Typ.) 16.9 nC Halogen-free According to IEC 61249-2-21 TrenchFET Power MOSFET


    Original     		Si4160DY Si4160DY-T1-GE3 11-Mar-11 si4160 69069 PDF

    Si4160DY-T1-GE3

    Abstract: RG406
    Text: New Product Si4160DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0049 at VGS = 10 V 25.4 0.0063 at VGS = 4.5 V 22.4 • • • • Qg (Typ.) 16.9 nC Halogen-free According to IEC 61249-2-21 TrenchFET Power MOSFET


    Original     		Si4160DY Si4160DY-T1-GE3 18-Jul-08 RG406 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4160DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0049 at VGS = 10 V 25.4 0.0063 at VGS = 4.5 V 22.4 • • • • Qg (Typ.) 16.9 nC Halogen-free According to IEC 61249-2-21 TrenchFET Power MOSFET


    Original     		Si4160DY Si4160DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4160DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0049 at VGS = 10 V 25.4 0.0063 at VGS = 4.5 V 22.4 • • • • Qg (Typ.) 16.9 nC Halogen-free According to IEC 61249-2-21 TrenchFET Power MOSFET


    Original     		Si4160DY Si4160DY-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si4160DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		Si4160DY 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4160DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0049 at VGS = 10 V 25.4 0.0063 at VGS = 4.5 V 22.4 • • • • Qg (Typ.) 16.9 nC Halogen-free According to IEC 61249-2-21 TrenchFET Power MOSFET


    Original     		Si4160DY Si4160DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    FSQ510 Equivalent

    Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
    Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178


    Original     		GP-20) FSQ510 Equivalent BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF

    Untitled

    Abstract: No abstract text available
    Text: xDSL ModemRouter Table of Contents DC/DC BUCK CONVERTER, DC/DC BUCK CONVERTER, Energy


    Original     		1N4148WS-V 500mA BAT54A-V 200mA; OT-23 BAT54W-V OD123 BAV99-V OD-323 PDF

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 PDF