Si4927DY
Abstract: No abstract text available
Text: SPICE Device Model Si4927DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
Si4927DY
S-52575Rev.
02-Jan-06
|
PDF
|
Si4927DY
Abstract: No abstract text available
Text: Si4927DY Vishay Siliconix P-Channel 30-V D-S Battery Switch PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.028 @ VGS = –10 V "7.4 0.045 @ VGS = –4.5 V "5.8 S1 S2 SO-8 S1 1 8 D G1 2 7 D S2 3 6 D G2 4 5 D G1 G2 Top View D1 D1 D2 P-Channel MOSFET D2
|
Original
|
Si4927DY
18-Jul-08
|
PDF
|
Si4927DY
Abstract: No abstract text available
Text: SPICE Device Model Si4927DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
Si4927DY
17-Apr-01
|
PDF
|
Si4927DY
Abstract: No abstract text available
Text: SPICE Device Model Si4927DY Dual P-Channel 30-V D-S MOSFET Characteristics • P-channel Vertical DMOS • Macro-Model (Subcircuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse
|
Original
|
Si4927DY
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si4927DY Vishay Siliconix P-Channel 30-V D-S Battery Switch PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.028 @ VGS = –10 V "7.4 0.045 @ VGS = –4.5 V "5.8 S1 S2 SO-8 S1 1 8 D G1 2 7 D S2 3 6 D G2 4 5 D G1 G2 Top View D1 D1 D2 P-Channel MOSFET D2
|
Original
|
Si4927DY
08-Apr-05
|
PDF
|
9327
Abstract: AN609 Si4927DY
Text: Si4927DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
|
Original
|
Si4927DY
AN609
12-Jun-07
9327
|
PDF
|
Si4927DY
Abstract: 70808
Text: Si4927DY Vishay Siliconix P-Channel 30-V D-S Battery Switch PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) ID (A) 0.028 @ VGS = –10 V "7.4 0.045 @ VGS = –4.5 V "5.8 S1 S2 SO-8 S1 1 8 D G1 2 7 D S2 3 6 D G2 4 5 D G1 G2 Top View D1 D1 D2 P-Channel MOSFET D2
|
Original
|
Si4927DY
S-59519--Rev.
04-Sep-98
70808
|
PDF
|
Si4927DY
Abstract: No abstract text available
Text: SPICE Device Model Si4927DY Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
|
Original
|
Si4927DY
18-Jul-08
|
PDF
|
SSP35n03
Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A
|
Original
|
5KE100A
5KE100CA
5KE10A
5KE10CA
5KE110A
5KE110CA
5KE11A
5KE11CA
5KE120A
5KE120CA
SSP35n03
bc417
ksh200 equivalent
2N5457 equivalent
ss8050 equivalent
1N34 equivalent
FQP50N06 equivalent
bd139 equivalent
2N5458 equivalent
2N3563 equivalent
|
PDF
|
VN10KLS
Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated
|
Original
|
Si4831DY
Si4833DY
Si4852DY
Si4816DY
10Single
VN50300L
VN50300T
OT-23
VN66AFD
VN10KLS
mosfet bs250
Si4730
SUP85N03-04P
VN66AFD
Si4835DY
si5504
SI3459DV
sup65p06
sub75p05
|
PDF
|
YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509
|
Original
|
2N7000
2N7002
2SJ377
2SJ378
2SJ380
2SJ401
2SJ402
2SJ407
2SJ412
2SJ419
YTA630
MTW14P20
BSS125
MTAJ30N06HD
2SK2837 equivalent
SMU10P05
SMP60N06 replacement
STE180N10
RFH75N05E
IRFD620
|
PDF
|
Siliconix mosfet guide
Abstract: Si9371 power selector guide Si8901EDB Si6875DQ nimh spice model charge SI8901 vishay resistances guide Si4927DY Si6866BDQ
Text: Power MOSFETs for Battery Pack Applications Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no
|
Original
|
Si9731
TSSOP-16
Si9371
Siliconix mosfet guide
Si9371
power selector guide
Si8901EDB
Si6875DQ
nimh spice model charge
SI8901
vishay resistances guide
Si4927DY
Si6866BDQ
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Si4927DY V1SHAY Siliconix Dual P-Channel 30-V D-S MOSFET New Product PRODUCT SUMMARY VDS (V) r DS(ON) (& ) Id (A) 0.028 @ VGS = —10 V ±7 .4 0.045 @ VGS = —4.5 V ±5 .8 -3 0 1 ° ' Si S2 O Q SO-8 6 6 □i D, P-Channel MOSFET 6 6 D2 D2 P-Channel MOSFET
|
OCR Scan
|
Si4927DY
S2SM735
DD17flflT
|
PDF
|
