Contextual Info: Tem ic Si6434DQ Semiconductors N-Channel 30-V D-S Rated MOSFET Product Summary V DS(V) 30 r DS(on) (£2) I d (A) 0.028 @ VGs = 10 V ±5.6 0.042 @VGs = 4.5 V ±4.5 D O TSSOP-8 D S S D Si6434DQ *Source Pins 2, 3, 6 and 7 must be tied common. Top View 6 s*

Si6434DQ

Abstract: S-49534
Contextual Info: Si6434DQ N-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) 30 rDS(on) (W) ID (A) 0.028 @ VGS = 10 V "5.6 0.042 @ VGS = 4.5 V "4.5 D TSSOP-8 D S S G 1 2 D 8 7 Si6434DQ 3 6 4 5 D S S D *Source Pins 2, 3, 6 and 7 must be tied common. G Top View S* N-Channel MOSFET

Si4410DY

Abstract: Si4936DY Si6434DQ Si9410DY
Contextual Info: Si9410DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "7.0 0.040 @ VGS = 5 V "6.0 0.050 @ VGS = 4.5 V "5.4 Recommended upgrade: Si4410DY or Si4936DY Lower profile/smaller size—see Si6434DQ D D D D SO-8

Contextual Info: Si6434DQ N-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) 30 rDS(on) (W) ID (A) 0.028 @ VGS = 10 V "5.6 0.042 @ VGS = 4.5 V "4.5 D TSSOP-8 D S S G 1 2 D 8 7 Si6434DQ 3 6 4 5 D S S D *Source Pins 2, 3, 6 and 7 must be tied common. G Top View S* N-Channel MOSFET

Si6434DQ

Contextual Info: Si6434DQ Siliconix NĆChannel EnhancementĆMode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.028 @ VGS = 10 V "5.6 0.042 @ VGS = 4.5 V "4.5 D TSSOPĆ8 D S S G 1 2 3 D 8 Si6434DQ 4 7 6 5 D S S D *Source Pins 2, 3, 6 and 7 must be tied common. G Top View

Si6434DQ

Contextual Info: Si6434DQ N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.028 @ VGS = 10 V "5.6 0.042 @ VGS = 4.5 V "4.5 D TSSOP-8 D S S G 1 2 D 8 7 Si6434DQ 3 6 4 5 D S S D *Source Pins 2, 3, 6 and 7 must be tied common. G Top View S* N-Channel MOSFET

Si6434DQ

Abstract: Si6434DQ-T1
Contextual Info: Si6434DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.028 @ VGS = 10 V 5.6 0.042 @ VGS = 4.5 V 4.5 D 100% Rg Tested D TSSOP-8 D 1 S 2 S 3 G 4 8 D 7 S D * Source Pins 2, 3, 6 and 7 must be tied common.

Si6434DQ

Abstract: Si6434DQ-T1
Contextual Info: Si6434DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.028 @ VGS = 10 V 5.6 0.042 @ VGS = 4.5 V 4.5 D 100% Rg Tested D TSSOP-8 D 1 S 2 S 3 G 4 8 D 7 S D * Source Pins 2, 3, 6 and 7 must be tied common.

AN609

Abstract: Si6434DQ
Contextual Info: Si6434DQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

S-49534

Abstract: Si6434DQ
Contextual Info: Si6434DQ Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.028 @ VGS = 10 V "5.6 0.042 @ VGS = 4.5 V "4.5 30 D TSSOP-8 D 1 S 2 S G D 8 D 7 S 3 6 S 4 5 D Si6434DQ * Source Pins 2, 3, 6 and 7 must be tied common. G Top View

a-14-s

Abstract: Si4410DY Si4936DY Si6434DQ Si9410DY
Contextual Info: Si9410DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "7.0 0.040 @ VGS = 5 V "6.0 0.050 @ VGS = 4.5 V "5.4 Recommended upgrade: Si4410DY or Si4936DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6434DQ

Si9410DY

Abstract: Siliconix Si4410DY Si4936DY Si6434DQ
Contextual Info: Si9410DY Siliconix N-Channel Enhancement-Mode MOSFET PRODUCT SUMMARY VDS V RDS(ON) (W) ID (A) 0.030 @ VGS = 10 V "7.0 0.040 @ VGS = 5 V "6.0 0.050 @ VGS = 4.5 V "5.4 30 Recommended upgrade: Si4410DY or Si4936DY Lower profile/smaller size—see Si6434DQ D D D D

Si6434DQ

Contextual Info: Si6434DQ N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.028 @ VGS = 10 V "5.6 0.042 @ VGS = 4.5 V "4.5 D TSSOP-8 D S S G 1 2 D 8 7 Si6434DQ 3 6 4 5 D S S D *Source Pins 2, 3, 6 and 7 must be tied common. G Top View S* N-Channel MOSFET

Si6434DQ

Abstract: Si6434DQ-T1
Contextual Info: Si6434DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.028 @ VGS = 10 V 5.6 0.042 @ VGS = 4.5 V 4.5 D 100% Rg Tested D TSSOP-8 D 1 S 2 S 3 G 4 8 D 7 S D * Source Pins 2, 3, 6 and 7 must be tied common.

Si9730

Contextual Info: Product is End of Life 12/2014 Si9730 Vishay Siliconix Dual-Cell Lithium Ion Battery Control IC DESCRIPTION FEATURES The Si9730 monitors the charging and discharging of dualcell lithium-ion battery packs carbon or coke chemistry ensuring that battery capacity is fully utilized while ensuring

mi4410

Abstract: MI4435 S39421 Si4431DY equivalent MI44 IRF7606 VME COnnector IRF7603 IRF7413 MMSF7N03HD
Contextual Info: Application Note 9 Using the S39421 as the Primary Control Circuit on a VME Live Insertion Card High availability is a key feature of many types of systems today. Whether the system is a central office switch, a private branch exchange or a server it is important the

71917

Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
Contextual Info: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller

V30114

Abstract: T0445 Si9730
Contextual Info: Si9730 Vishay Siliconix Dual-Cell Lithium Ion Battery Control IC FEATURES D D D D D D Over-Charge Protection Over-Discharge Protection Short Circuit Current Limiting Battery Open-Circuit Center Tap Protection Cell Voltage Balancing Undervoltage Lockout D D

Si9730

Contextual Info: Si9730 Vishay Siliconix Dual-Cell Lithium Ion Battery Control IC FEATURES D D D D D D Over-Charge Protection Over-Discharge Protection Short Circuit Current Limiting Battery Open-Circuit Center Tap Protection Cell Voltage Balancing Undervoltage Lockout D D

mosfet cross reference

Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
Contextual Info: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P

DL20DC

Abstract: DL20C Si9730
Contextual Info: Si9730 Vishay Siliconix Dual-Cell Lithium Ion Battery Control IC FEATURES D D D D D D Over-Charge Protection Over-Discharge Protection Short Circuit Current Limiting Battery Open-Circuit Center Tap Protection Cell Voltage Balancing Undervoltage Lockout D D

VN10KLS

Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated

Si9730

Abstract: overcharge protection circuit diagram 100-W Si9730ABY-T1 Si9730BBY-T1 Si9730CBY-T1 Si9730DBY-T1 Si9936DY overcharge voltage detection
Contextual Info: Si9730 Vishay Siliconix Dual-Cell Lithium Ion Battery Control IC FEATURES D D D D D D Over-Charge Protection Over-Discharge Protection Short Circuit Current Limiting Battery Open-Circuit Center Tap Protection Cell Voltage Balancing Undervoltage Lockout D D

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509