Si6434DQ
Abstract: S-49534
Text: Si6434DQ N-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) 30 rDS(on) (W) ID (A) 0.028 @ VGS = 10 V "5.6 0.042 @ VGS = 4.5 V "4.5 D TSSOP-8 D S S G 1 2 D 8 7 Si6434DQ 3 6 4 5 D S S D *Source Pins 2, 3, 6 and 7 must be tied common. G Top View S* N-Channel MOSFET
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Si6434DQ
S-49534--Rev.
06-Oct-97
S-49534
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Si4410DY
Abstract: Si4936DY Si6434DQ Si9410DY
Text: Si9410DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "7.0 0.040 @ VGS = 5 V "6.0 0.050 @ VGS = 4.5 V "5.4 Recommended upgrade: Si4410DY or Si4936DY Lower profile/smaller size—see Si6434DQ D D D D SO-8
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Si9410DY
Si4410DY
Si4936DY
Si6434DQ
S-51309--Rev.
18-Dec-96
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Untitled
Abstract: No abstract text available
Text: Si6434DQ N-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) 30 rDS(on) (W) ID (A) 0.028 @ VGS = 10 V "5.6 0.042 @ VGS = 4.5 V "4.5 D TSSOP-8 D S S G 1 2 D 8 7 Si6434DQ 3 6 4 5 D S S D *Source Pins 2, 3, 6 and 7 must be tied common. G Top View S* N-Channel MOSFET
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Si6434DQ
S-49534--Rev.
06-Oct-97
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Si6434DQ
Abstract: No abstract text available
Text: Si6434DQ Siliconix NĆChannel EnhancementĆMode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.028 @ VGS = 10 V "5.6 0.042 @ VGS = 4.5 V "4.5 D TSSOPĆ8 D S S G 1 2 3 D 8 Si6434DQ 4 7 6 5 D S S D *Source Pins 2, 3, 6 and 7 must be tied common. G Top View
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Si6434DQ
S44169Rev.
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Si6434DQ
Abstract: No abstract text available
Text: Si6434DQ N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.028 @ VGS = 10 V "5.6 0.042 @ VGS = 4.5 V "4.5 D TSSOP-8 D S S G 1 2 D 8 7 Si6434DQ 3 6 4 5 D S S D *Source Pins 2, 3, 6 and 7 must be tied common. G Top View S* N-Channel MOSFET
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Si6434DQ
S-47958--Rev.
15-Apr-96
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Si6434DQ
Abstract: Si6434DQ-T1
Text: Si6434DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.028 @ VGS = 10 V 5.6 0.042 @ VGS = 4.5 V 4.5 D 100% Rg Tested D TSSOP-8 D 1 S 2 S 3 G 4 8 D 7 S D * Source Pins 2, 3, 6 and 7 must be tied common.
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Si6434DQ
Si6434DQ-T1
S-31725--Rev.
18-Aug-03
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Si6434DQ
Abstract: Si6434DQ-T1
Text: Si6434DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.028 @ VGS = 10 V 5.6 0.042 @ VGS = 4.5 V 4.5 D 100% Rg Tested D TSSOP-8 D 1 S 2 S 3 G 4 8 D 7 S D * Source Pins 2, 3, 6 and 7 must be tied common.
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Si6434DQ
Si6434DQ-T1
18-Jul-08
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AN609
Abstract: Si6434DQ
Text: Si6434DQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].
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Si6434DQ
AN609
27-Jun-07
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S-49534
Abstract: Si6434DQ
Text: Si6434DQ Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.028 @ VGS = 10 V "5.6 0.042 @ VGS = 4.5 V "4.5 30 D TSSOP-8 D 1 S 2 S G D 8 D 7 S 3 6 S 4 5 D Si6434DQ * Source Pins 2, 3, 6 and 7 must be tied common. G Top View
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Si6434DQ
S-49534--Rev.
06-Oct-97
S-49534
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a-14-s
Abstract: Si4410DY Si4936DY Si6434DQ Si9410DY
Text: Si9410DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "7.0 0.040 @ VGS = 5 V "6.0 0.050 @ VGS = 4.5 V "5.4 Recommended upgrade: Si4410DY or Si4936DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6434DQ
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Si9410DY
Si4410DY
Si4936DY
Si6434DQ
S-47958--Rev.
15-Apr-96
a-14-s
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Si9410DY
Abstract: Siliconix Si4410DY Si4936DY Si6434DQ
Text: Si9410DY Siliconix N-Channel Enhancement-Mode MOSFET PRODUCT SUMMARY VDS V RDS(ON) (W) ID (A) 0.030 @ VGS = 10 V "7.0 0.040 @ VGS = 5 V "6.0 0.050 @ VGS = 4.5 V "5.4 30 Recommended upgrade: Si4410DY or Si4936DY Lower profile/smaller size—see Si6434DQ D D D D
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Si9410DY
Si4410DY
Si4936DY
Si6434DQ
S-51309--Rev.
18-Dec-96
Siliconix
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Si6434DQ
Abstract: No abstract text available
Text: Si6434DQ N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.028 @ VGS = 10 V "5.6 0.042 @ VGS = 4.5 V "4.5 D TSSOP-8 D S S G 1 2 D 8 7 Si6434DQ 3 6 4 5 D S S D *Source Pins 2, 3, 6 and 7 must be tied common. G Top View S* N-Channel MOSFET
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Original
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Si6434DQ
S-47958--Rev.
15-Apr-96
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Si6434DQ
Abstract: Si6434DQ-T1
Text: Si6434DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.028 @ VGS = 10 V 5.6 0.042 @ VGS = 4.5 V 4.5 D 100% Rg Tested D TSSOP-8 D 1 S 2 S 3 G 4 8 D 7 S D * Source Pins 2, 3, 6 and 7 must be tied common.
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Si6434DQ
Si6434DQ-T1
08-Apr-05
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Si4410DY
Abstract: Si4936DY Si6434DQ Si9410DY
Text: Si9410DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "7.0 0.040 @ VGS = 5 V "6.0 0.050 @ VGS = 4.5 V "5.4 Recommended upgrade: Si4410DY or Si4936DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6434DQ
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Si9410DY
Si4410DY
Si4936DY
Si6434DQ
S-47958--Rev.
15-Apr-96
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mi4410
Abstract: MI4435 S39421 Si4431DY equivalent MI44 IRF7606 VME COnnector IRF7603 IRF7413 MMSF7N03HD
Text: Application Note 9 Using the S39421 as the Primary Control Circuit on a VME Live Insertion Card High availability is a key feature of many types of systems today. Whether the system is a central office switch, a private branch exchange or a server it is important the
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S39421
These30V
MTSF2P03HD
MMSF3P02HD
MTD20P03HDL2
Si6435DQ
Si6415DQ
Si4431DY
Si4435DY
VME64x
mi4410
MI4435
Si4431DY equivalent
MI44
IRF7606
VME COnnector
IRF7603
IRF7413
MMSF7N03HD
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71917
Abstract: level logic mosfet transistor so-8 offline switchmode si9110 siliconix an607 AN607 AN707 SI4406DY PowerPAK SO-8 si2301ds
Text: AN607 Vishay Siliconix DC-to-DC Design Guide Serge Jaunay, Jess Brown INTRODUCTION Manufacturers of electronic systems that require power conversion are faced with the need for higher-density dc-to-dc converters that perform more efficiently, within a smaller
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AN607
Si9137
SSOP-28
Si9910
Si9912
Si9913
10-Oct-02
71917
level logic mosfet transistor so-8
offline switchmode
si9110
siliconix an607
AN607
AN707
SI4406DY
PowerPAK SO-8
si2301ds
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V30114
Abstract: T0445 Si9730
Text: Si9730 Vishay Siliconix Dual-Cell Lithium Ion Battery Control IC FEATURES D D D D D D Over-Charge Protection Over-Discharge Protection Short Circuit Current Limiting Battery Open-Circuit Center Tap Protection Cell Voltage Balancing Undervoltage Lockout D D
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Si9730
Si9730
X1011
P9010
11-Feb-05
V30114
T0445
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Si9730
Abstract: No abstract text available
Text: Si9730 Vishay Siliconix Dual-Cell Lithium Ion Battery Control IC FEATURES D D D D D D Over-Charge Protection Over-Discharge Protection Short Circuit Current Limiting Battery Open-Circuit Center Tap Protection Cell Voltage Balancing Undervoltage Lockout D D
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Si9730
Si9730
08-Apr-05
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mosfet cross reference
Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
Text: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P
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2N7000
IRF7203
FDS9435A
2N7002
OT-23,
IRF7204
NDS8434A
BS170
mosfet cross reference
SMP40N06
SMP75N06-08
SI9952DY
SMP60N03-10L
IRFZ44 TO-263
Si9948DY
irf1010e equivalent
IRLL014N
NDT3055L
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DL20DC
Abstract: DL20C Si9730
Text: Si9730 Vishay Siliconix Dual-Cell Lithium Ion Battery Control IC FEATURES D D D D D D Over-Charge Protection Over-Discharge Protection Short Circuit Current Limiting Battery Open-Circuit Center Tap Protection Cell Voltage Balancing Undervoltage Lockout D D
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Si9730
Si9730
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
DL20DC
DL20C
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VN10KLS
Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Text: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated
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Si4831DY
Si4833DY
Si4852DY
Si4816DY
10Single
VN50300L
VN50300T
OT-23
VN66AFD
VN10KLS
mosfet bs250
Si4730
SUP85N03-04P
VN66AFD
Si4835DY
si5504
SI3459DV
sup65p06
sub75p05
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Si9730
Abstract: overcharge protection circuit diagram 100-W Si9730ABY-T1 Si9730BBY-T1 Si9730CBY-T1 Si9730DBY-T1 Si9936DY overcharge voltage detection
Text: Si9730 Vishay Siliconix Dual-Cell Lithium Ion Battery Control IC FEATURES D D D D D D Over-Charge Protection Over-Discharge Protection Short Circuit Current Limiting Battery Open-Circuit Center Tap Protection Cell Voltage Balancing Undervoltage Lockout D D
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Si9730
Si9730
18-Jul-08
overcharge protection circuit diagram
100-W
Si9730ABY-T1
Si9730BBY-T1
Si9730CBY-T1
Si9730DBY-T1
Si9936DY
overcharge voltage detection
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YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509
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2N7000
2N7002
2SJ377
2SJ378
2SJ380
2SJ401
2SJ402
2SJ407
2SJ412
2SJ419
YTA630
MTW14P20
BSS125
MTAJ30N06HD
2SK2837 equivalent
SMU10P05
SMP60N06 replacement
STE180N10
RFH75N05E
IRFD620
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Untitled
Abstract: No abstract text available
Text: Tem ic Si6434DQ Semiconductors N-Channel 30-V D-S Rated MOSFET Product Summary V DS(V) 30 r DS(on) (£2) I d (A) 0.028 @ VGs = 10 V ±5.6 0.042 @VGs = 4.5 V ±4.5 D O TSSOP-8 D S S D Si6434DQ *Source Pins 2, 3, 6 and 7 must be tied common. Top View 6 s*
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OCR Scan
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Si6434DQ
S-49534â
06-Oct-97
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