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    SI7464DP Price and Stock

    Vishay Siliconix SI7464DP-T1-E3

    MOSFET N-CH 200V 1.8A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI7464DP-T1-E3 Cut Tape 2,940 1
    • 1 $2.15
    • 10 $1.46
    • 100 $2.15
    • 1000 $0.79484
    • 10000 $0.79484
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    SI7464DP-T1-E3 Digi-Reel 2,940 1
    • 1 $2.15
    • 10 $1.46
    • 100 $2.15
    • 1000 $0.79484
    • 10000 $0.79484
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    SI7464DP-T1-E3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.7625
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    RS SI7464DP-T1-E3 Bulk 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.41
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    Quest Components SI7464DP-T1-E3 148
    • 1 $4.5
    • 10 $2.25
    • 100 $1.95
    • 1000 $1.95
    • 10000 $1.95
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    Vishay Siliconix SI7464DP-T1-GE3

    MOSFET N-CH 200V 1.8A PPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI7464DP-T1-GE3 Cut Tape 1,930 1
    • 1 $2.15
    • 10 $1.46
    • 100 $2.15
    • 1000 $0.79484
    • 10000 $0.79484
    		Buy Now
    SI7464DP-T1-GE3 Digi-Reel 1,930 1
    • 1 $2.15
    • 10 $1.46
    • 100 $2.15
    • 1000 $0.79484
    • 10000 $0.79484
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    SI7464DP-T1-GE3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.7625
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    New Advantage Corporation SI7464DP-T1-GE3 3,000 1
    • 1 -
    • 10 -
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    • 1000 -
    • 10000 $1.03
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    Vishay Intertechnologies SI7464DP-T1-GE3

    N-CH 200-V (D-S) FAST SWITCHING MOSFET - Tape and Reel (Alt: SI7464DP-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI7464DP-T1-GE3 Reel 21 Weeks 3,000
    • 1 -
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    • 10000 $0.74878
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    Mouser Electronics SI7464DP-T1-GE3 1,990
    • 1 $2.03
    • 10 $1.46
    • 100 $1.05
    • 1000 $0.795
    • 10000 $0.762
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    Newark SI7464DP-T1-GE3 Reel 3,000
    • 1 -
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    • 1000 -
    • 10000 $0.781
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    TTI SI7464DP-T1-GE3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.76
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    Vishay Intertechnologies SI7464DP-T1-E3

    MOSFETs 200V Vds 20V Vgs PowerPAK SO-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SI7464DP-T1-E3 2,357
    • 1 $1.72
    • 10 $1.28
    • 100 $0.998
    • 1000 $0.795
    • 10000 $0.762
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    Verical SI7464DP-T1-E3 3,000 3,000
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    • 10000 $0.7401
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    SI7464DP-T1-E3 2,100 8
    • 1 -
    • 10 $0.8188
    • 100 $0.8188
    • 1000 $0.8188
    • 10000 $0.8188
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    Arrow Electronics SI7464DP-T1-E3 3,000 21 Weeks 3,000
    • 1 -
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    • 100 -
    • 1000 -
    • 10000 $0.7409
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    SI7464DP-T1-E3 Cut Strips 2,100 21 Weeks 1
    • 1 $1.2447
    • 10 $1.0846
    • 100 $0.9062
    • 1000 $0.8188
    • 10000 $0.8188
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    TTI SI7464DP-T1-E3 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.75
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    EBV Elektronik SI7464DP-T1-E3 22 Weeks 3,000
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    SI7464DP Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI7464DP Vishay Siliconix MOSFETs Original PDF
    SI7464DP Vishay Telefunken N-channel 6-v (d-s) Fast Switching Mosfet Original PDF
    Si7464DP SPICE Device Model Vishay N-Channel 6-V (D-S) Fast Switching MOSFET Original PDF
    SI7464DP-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 1.8A PPAK 8SOIC Original PDF
    SI7464DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 1.8A 8-SOIC Original PDF

    SI7464DP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si7464DP

    Abstract: No abstract text available
    Text: SPICE Device Model Si7464DP Vishay Siliconix N-Channel 6-V D-S Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si7464DP 25-May-04

    Untitled

    Abstract: No abstract text available
    Text: Si7464DP Vishay Siliconix N-Channel 200-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) (Ω) ID (A) 0.24 at VGS = 10 V 2.8 0.26 at VGS = 6 V 2.7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs


    Original     		PDF Si7464DP Si7464DP-T1-E3 Si7464DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si7464DP Vishay Siliconix N-Channel 200-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) (Ω) ID (A) 0.24 at VGS = 10 V 2.8 0.26 at VGS = 6 V 2.7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs


    Original     		PDF Si7464DP Si7464DP-T1-E3 Si7464DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si7464DP www.vishay.com Vishay Siliconix N-Channel 200 V D-S Fast Switching MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si7464DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si7464DP Vishay Siliconix N-Channel 200-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) (Ω) ID (A) 0.24 at VGS = 10 V 2.8 0.26 at VGS = 6 V 2.7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs


    Original     		PDF Si7464DP Si7464DP-T1-E3 Si7464DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Si7464DP

    Abstract: No abstract text available
    Text: SPICE Device Model Si7464DP Vishay Siliconix N-Channel 6-V D-S Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si7464DP 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si7464DP Vishay Siliconix N-Channel 200-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) (Ω) ID (A) 0.24 at VGS = 10 V 2.8 0.26 at VGS = 6 V 2.7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs


    Original     		PDF Si7464DP Si7464DP-T1-E3 Si7464DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Si7464DP

    Abstract: Si7464DP-T1
    Text: Si7464DP Vishay Siliconix New Product N-Channel 200-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (Ω) ID (A) 0.24 at VGS = 10 V 2.8 0.26 at VGS = 6 V 2.7 • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile


    Original     		PDF Si7464DP 07-mm Si7464DP-T1 Si7464DP-T1--E3 08-Apr-05

    Si7464DP

    Abstract: 70326
    Text: SPICE Device Model Si7464DP Vishay Siliconix N-Channel 6-V D-S Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si7464DP S-60245Rev. 20-Feb-06 70326

    Si7464DP

    Abstract: Si7464DP-T1-E3 Si7464DP-T1-GE3
    Text: Si7464DP Vishay Siliconix N-Channel 200-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) (Ω) ID (A) 0.24 at VGS = 10 V 2.8 0.26 at VGS = 6 V 2.7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs


    Original     		PDF Si7464DP Si7464DP-T1-E3 Si7464DP-T1-GE3 18-Jul-08

    Si7464DP

    Abstract: No abstract text available
    Text: Si7464DP New Product Vishay Siliconix N-Channel 200-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (W) ID (A) 0.24 @ VGS = 10 V 2.8 0.26 @ VGS = 6 V 2.7 D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile


    Original     		PDF Si7464DP 07-mm S-22097--Rev. 02-Dec-02

    Untitled

    Abstract: No abstract text available
    Text: Si7464DP Vishay Siliconix New Product N-Channel 200-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 rDS(on) (Ω) ID (A) 0.24 at VGS = 10 V 2.8 0.26 at VGS = 6 V 2.7 • TrenchFET Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile


    Original     		PDF Si7464DP 07-mm Si7464DP-T1 Si7464DP-T1--E3 18-Jul-08

    Si7464DP

    Abstract: No abstract text available
    Text: SPICE Device Model Si7464DP Vishay Siliconix N-Channel 6-V D-S Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si7464DP 0-to-10V 12-Dec-02

    129010

    Abstract: 7106 AN609 Si7464DP
    Text: Si7464DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si7464DP AN609 28-Nov-05 129010 7106

    Untitled

    Abstract: No abstract text available
    Text: Si7464DP Vishay Siliconix N-Channel 200-V D-S Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) 200 RDS(on) (Ω) ID (A) 0.24 at VGS = 10 V 2.8 0.26 at VGS = 6 V 2.7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs


    Original     		PDF Si7464DP Si7464DP-T1-E3 Si7464DP-T1-GE3 11-Mar-11

    application note LM3445

    Abstract: murs120-13-f GRM188R71C474K MOSFET N-CH 200V GRM188R71C474KA GCM1885C LM3445 HI1206T161
    Text: LM3445 Application Note 1978 LM3445 120VAC Small Evaluation Board Literature Number: SNVA401F National Semiconductor Application Note 1978 Matthew Reynolds November 10, 2009 Introduction istics. The above restrictions for the input voltage are valid only for the demonstration board as shipped with the


    Original     		PDF LM3445 LM3445 120VAC SNVA401F 90VAC 135VAC application note LM3445 murs120-13-f GRM188R71C474K MOSFET N-CH 200V GRM188R71C474KA GCM1885C HI1206T161

    Pa3177NL

    Abstract: LT3748 IGBT 48V 200A Si7738 BZT52C5 RC snubber mosfet design 750311591 flyback snubber c3748 B360 diode
    Text: LT3748 100V Isolated Flyback Controller Features n n n n n n n n n n Description 5V to 100V Input Voltage Range 1.9A Average Gate Drive Source and Sink Current Boundary Mode Operation No Transformer Third Winding or Opto-Isolator Required for Regulation Primary-Side Winding Feedback Load Regulation


    Original     		PDF LT3748 0V/100V LT1725 LT1737 3803/LTC3803-3 200kHz/300kHz LTC3803-5 LTC3805/LTC3805-5 3748f Pa3177NL LT3748 IGBT 48V 200A Si7738 BZT52C5 RC snubber mosfet design 750311591 flyback snubber c3748 B360 diode

    BS250KL-TR1-E3

    Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
    Text: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8


    Original     		PDF SI3865BDV-T1-E3CT-ND SI4720CY-T1-E3CT-ND SI6924AEDQ-T1-E3CT-ND SI1040X-T1-E3TR-ND SI1865DL-T1-E3TR-ND SI1869DH-T1-E3TR-ND SI3861BDV-T1-E3TR-ND SI3865BDV-T1-E3TR-ND SI4720CY-T1-E3TR-ND SI6924AEDQ-T1-E3TR-ND BS250KL-TR1-E3 si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3

    lm3445

    Abstract: RF071M2STR MOSFET N-CH 200V br1 BRIDGE application note LM3445 BRIDGE-RECTIFIER 100v 1a dale fuse dale fuse resistor HD04-T AN-1978
    Text: National Semiconductor Application Note 1978 Matthew Reynolds August 19, 2009 Introduction istics. The above restrictions for the input voltage are valid only for the demonstration board as shipped with the schematic below. Please refer to the LM3445 data sheet for


    Original     		PDF LM3445 LM3445 90VAC 135VAC AN-1978 RF071M2STR MOSFET N-CH 200V br1 BRIDGE application note LM3445 BRIDGE-RECTIFIER 100v 1a dale fuse dale fuse resistor HD04-T AN-1978

    si7738

    Abstract: Pa3177NL pa2467
    Text: LT3748 100V Isolated Flyback Controller FEATURES n n n n n n n n n n DESCRIPTION The LT 3748 is a switching regulator controller specifically designed for the isolated flyback topology and capable of high power. It drives a low side external N-channel power


    Original     		PDF LT3748 LT1725 LT1737 3803/LTC3803-3 200kHz/300kHz LTC3803-5 LTC3805/LTC3805-5 3748fa si7738 Pa3177NL pa2467

    Pa3177NL

    Abstract: LT3748 600V 300A igbt dc to dc boost converter IGBT 48V 200A Si7738 LT3748EMS PA2467NL DC1557 PA2367NL SBR8U60P5
    Text: LT3748 100V Isolated Flyback Controller FEATURES DESCRIPTION n The LT 3748 is a switching regulator controller specifically designed for the isolated flyback topology and capable of high power. It drives a low side external N-channel power MOSFET from an internally regulated 7V supply. No third


    Original     		PDF LT3748 LT1725 LT1737 3803/LTC3803-3 200kHz/300kHz LTC3803-5 LTC3805/LTC3805-5 3748fa Pa3177NL LT3748 600V 300A igbt dc to dc boost converter IGBT 48V 200A Si7738 LT3748EMS PA2467NL DC1557 PA2367NL SBR8U60P5

    si7738

    Abstract: flyback secondary RC snubber CMZ5919B
    Text: LT3748 100V Isolated Flyback Controller Features Description 5V to 100V Input Voltage Range nn 1.9A Average Gate Drive Source and Sink Current nn Boundary Mode Operation nn No Transformer Third Winding or Opto-Isolator Required for Regulation nn Primary-Side Winding Feedback Load Regulation


    Original     		PDF LT3748 LT1737 3803/LTC3803-3 LTC3803-5 200kHz/300kHz LTC3805/LTC3805-5 com/LT3748 3748fb si7738 flyback secondary RC snubber CMZ5919B

    q406 transistor

    Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
    Text: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no


    Original     		PDF SiP41109 SiP41110 SiP41111 75/2A q406 transistor SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836