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    Vishay Siliconix SI7774DP-T1-GE3

    MOSFET N-CH 30V 60A PPAK SO-8
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    DigiKey SI7774DP-T1-GE3 Reel
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    Vishay Intertechnologies SI7774DP-T1-GE3

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    Bristol Electronics SI7774DP-T1-GE3 1,222
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    SI7774DP-T1-GE3 391
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    Quest Components SI7774DP-T1-GE3 977
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    SI7774DP Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI7774DP-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 60A 8-SOIC Original PDF

    SI7774DP Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: New Product Si7774DP Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0038 at VGS = 10 V 60 0.0047 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 21.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si7774DP 2002/95/EC Si7774DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7774DP Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0038 at VGS = 10 V 60 0.0047 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 21.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si7774DP 2002/95/EC Si7774DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si7774DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si7774DP AN609, 1885m 5123m 4249m 2619m 6687m 3501m 9519u

    si7774

    Abstract: No abstract text available
    Text: New Product Si7774DP Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0038 at VGS = 10 V 60 0.0047 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 21.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si7774DP 2002/95/EC Si7774DP-T1-GE3 18-Jul-08 si7774

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7774DP Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0038 at VGS = 10 V 60 0.0047 at VGS = 4.5 V 60 VDS (V) 30 Qg (Typ.) 21.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si7774DP 2002/95/EC Si7774DP-T1-GE3 11-Mar-11

    67120

    Abstract: No abstract text available
    Text: SPICE Device Model Si7774DP Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si7774DP 18-Jul-08 67120

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7774DP Vishay Siliconix N-Channel 30 V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) () 30 0.0038 at VGS = 10 V 60 0.0047 at VGS = 4.5 V 60 Qg (Typ.) 21.5 nC PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si7774DP 2002/95/EC Si7774DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - Save Space, Increase Performance SkyFET Integrated MOSFET and Schottky Diode Solution Key Benefits • • • • Increases efficiency for DC/DC converter applications Reduces space and solution cost by eliminating external Schottky diodes


    Original     		PDF SiS778DN SiS782DN SiS780DN SiZ914DT VMN-PT0104-1302

    si4776

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Save Space, Increase Performance AND TEC I INNOVAT O L OGY SkyFET N HN POWER MOSFETs O 19 62-2012 Integrated MOSFET and Schottky Diode Solution KEY BENEFITS • • • • Increases efficiency for DC/DC converter applications


    Original     		PDF SiR788DP Si7774DP Si7748DP Si7772DP Si4628DY Si4752DY Si4774DY Si4712DY Si4714DY Si4776DY si4776

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836