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    Vishay Siliconix SIA448DJ-T1-GE3

    MOSFET N-CH 20V 12A PPAK SC70-6
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    SIA448DJ Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIA448DJ-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 12A SC70-6L Original PDF

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    SIA448DJ

    Abstract: SiA448DJ-T1-GE3
    Text: New Product SiA448DJ Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. ID (A) 0.0150 at VGS = 4.5 V 12 0.0166 at VGS = 2.5 V 12 0.0200 at VGS = 1.8 V 12 0.0324 at VGS = 1.5 V 12 a Qg (Typ.) 13 nC PowerPAK SC-70-6L-Single


    Original     		PDF SiA448DJ SC-70 SC-70-6L-Single 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SiA448DJ-T1-GE3

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model SiA448DJ www.vishay.com Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF SiA448DJ 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiA448DJ_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiA448DJ AN609, 7787u 0133m 8577m 8277m 6779m 9104u 9103u 9552m

    Untitled

    Abstract: No abstract text available
    Text: New Product SiA448DJ Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) () Max. ID (A) 0.0150 at VGS = 4.5 V 12 0.0166 at VGS = 2.5 V 12 0.0200 at VGS = 1.8 V 12 0.0324 at VGS = 1.5 V 12 a Qg (Typ.) 13 nC PowerPAK SC-70-6L-Single


    Original     		PDF SiA448DJ SC-70-6L-Single SC-70 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Small 2 mm x 2 mm Size and Low On-resistance PowerPAK SC-70 Half the Size of TSOP-6 Without Compromising On-Resistance KEY BENEFITS • 2 mm x 2 mm footprint area is 50 % of TSOP-6 with comparable on-resistance:


    Original     		PDF SC-70 SiA519EDJ com/mosfets/powerpak-sc-70-package/ VMN-PT0131-1402

    SiA427DJ

    Abstract: SiA450DJ SiA447DJ SiA413DJ SiA413 SiA445EDJ SIA915DJ
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Small 2 mm x 2 mm Size and Low On-resistance AND TEC I INNOVAT O L OGY PowerPAK SC-70 N HN POWER MOSFETs O 19 62-2012 Half the Size of TSOP-6 Without Compromising On-Resistance KEY BENEFITS • 2 mm x 2 mm footprint area is 50 % of TSOP-6 with comparable on-resistance:


    Original     		PDF SC-70 SC-70 com/mosfets/powerpak-sc-70-package/ VMN-PT0131-1209 SiA427DJ SiA450DJ SiA447DJ SiA413DJ SiA413 SiA445EDJ SIA915DJ

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836