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    SIB912DK Price and Stock

    Vishay Siliconix SIB912DK-T1-GE3

    MOSFET 2N-CH 20V 1.5A PPAK8X8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIB912DK-T1-GE3 Cut Tape 53,107 1
    • 1 $0.76
    • 10 $0.473
    • 100 $0.76
    • 1000 $0.20928
    • 10000 $0.20928
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    SIB912DK-T1-GE3 Digi-Reel 53,107 1
    • 1 $0.76
    • 10 $0.473
    • 100 $0.76
    • 1000 $0.20928
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    SIB912DK-T1-GE3 Reel 51,000 3,000
    • 1 -
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    • 10000 $0.1375
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    Vishay Intertechnologies SIB912DK-T1-GE3

    DUAL N-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SIB912DK-T1-GE3)
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    Avnet Americas SIB912DK-T1-GE3 Reel 348,000 3,000
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    Verical SIB912DK-T1-GE3 6,000 3,000
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    Arrow Electronics SIB912DK-T1-GE3 6,000 13 Weeks 3,000
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    Newark SIB912DK-T1-GE3 Cut Tape 3,000
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    • 100 $0.204
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    SIB912DK-T1-GE3 Reel 3,000
    • 1 $0.194
    • 10 $0.194
    • 100 $0.194
    • 1000 $0.194
    • 10000 $0.175
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    TTI SIB912DK-T1-GE3 Reel 9,000 3,000
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    • 10000 $0.138
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    EBV Elektronik SIB912DK-T1-GE3 14 Weeks 3,000
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    SIB912DK Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIB912DK-T1-GE3 Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 20V 1.5A SC-75-6 Original PDF

    SIB912DK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN609

    Abstract: No abstract text available
    Text: SiB912DK_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		PDF SiB912DK AN609, 22-Aug-08 AN609

    SiB912DK

    Abstract: SC75-6L
    Text: New Product SiB912DK Vishay Siliconix Dual N-Channel 20-V MOSFET FEATURES PRODUCT SUMMARY RDS on (Ω) ID (A)a, g 0.216 at VGS = 4.5 V 1.5 0.268 at VGS = 2.5 V 1.5 0.375 at VGS = 1.8 V 1.0 VDS (V) 20 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF SiB912DK SC-75 SC75-6L-Dual SiB912DK-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SC75-6L

    S-82-552

    Abstract: 8255-2
    Text: SPICE Device Model SiB912DK Vishay Siliconix Dual N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF SiB912DK 18-Jul-08 S-82-552 8255-2

    Untitled

    Abstract: No abstract text available
    Text: New Product SiB912DK Vishay Siliconix Dual N-Channel 20-V MOSFET FEATURES PRODUCT SUMMARY RDS on (Ω) ID (A)a, g 0.216 at VGS = 4.5 V 1.5 0.268 at VGS = 2.5 V 1.5 0.375 at VGS = 1.8 V 1.0 VDS (V) 20 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF SiB912DK SC-75 SC75-6L-Dual 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    SC75-6L

    Abstract: FET MARKING CODE SC-75
    Text: New Product SiB912DK Vishay Siliconix Dual N-Channel 20-V MOSFET FEATURES PRODUCT SUMMARY RDS on (Ω) ID (A)a, g 0.216 at VGS = 4.5 V 1.5 0.268 at VGS = 2.5 V 1.5 0.375 at VGS = 1.8 V 1.0 VDS (V) 20 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF SiB912DK SC-75 SC75-6L-Dual 18-Jul-08 SC75-6L FET MARKING CODE

    "MARKING CODE G2"

    Abstract: No abstract text available
    Text: New Product SiB912DK Vishay Siliconix Dual N-Channel 20-V MOSFET FEATURES PRODUCT SUMMARY RDS on (Ω) ID (A)a, g 0.216 at VGS = 4.5 V 1.5 0.268 at VGS = 2.5 V 1.5 0.375 at VGS = 1.8 V 1.0 VDS (V) 20 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF SiB912DK SC-75 SC75-6L-Dual SiB912DK-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 "MARKING CODE G2"

    Untitled

    Abstract: No abstract text available
    Text: New Product SiB912DK Vishay Siliconix Dual N-Channel 20-V MOSFET FEATURES PRODUCT SUMMARY RDS on (Ω) ID (A)a, g 0.216 at VGS = 4.5 V 1.5 0.268 at VGS = 2.5 V 1.5 0.375 at VGS = 1.8 V 1.0 VDS (V) 20 • Halogen-free • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK®


    Original     		PDF SiB912DK SC-75 SC75-6L-Dual SiB912DK-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - 1.6 mm x 1.6 mm Footprint with Low On-Resistance PowerPAK SC-75 Ultra-Low On-Resistance, and Ultra-Small Size Key features • PowerPAK® SC-75 provides same tiny 1.6 mm x 1.6 mm footprint as standard SC-75, but with


    Original     		PDF SC-75 SC-75 SC-75, appli32 SiB437EDKT SiB441EDK SiB457EDK SiB433EDK SiB914DK SiB912DK

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. Medical Diagnostics and Monitoring One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Medical Diagnostics and Monitoring X-Ray Machines 4 Patient Monitoring 5 Cardiac Pacing 6


    Original     		PDF VMN-MS6761-1212

    VJ5301M

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. Medical Diagnostics and Monitoring One of the World’s Largest Manufacturers of www.vishay.com Discrete Semiconductors and Passive Components Medical 医療機器 X線機器 4 患者監視装置 5 ペースメーカー 6 血糖値測定器 7


    Original     		PDF VMN-MS6792-1304-ME VJ5301M

    SiB914

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 1.6 mm x 1.6 mm Footprint with Low On-Resistance AND TEC I INNOVAT O L OGY PowerPAK SC-75 N HN POWER MOSFETs O 19 62-2012 Ultra-Low On-Resistance, and Ultra-Small Size KEY FEATURES • PowerPAK® SC-75 provides same tiny 1.6 mm x 1.6 mm footprint as standard SC-75, but with


    Original     		PDF SC-75 SC-75 SC-75, space-const19 com/mosfets/powerpak-sc-75-package/ VMN-PT0196-1209 SiB914

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		PDF Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836

    Diode SOT-23 marking 15d

    Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
    Text: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs


    Original     		PDF Diod92 VMN-SG2127-0911 Diode SOT-23 marking 15d SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477