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Catalog Datasheet	MFG & Type	PDF	Document Tags
SiHFIBF20G Abstract: IRFIBF20G SiHFIBF20G-E3 Text: IRFIBF20G, SiHFIBF20G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS V 900 RDS(on) (Ω) VGS = 10 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 8.0 Qg (Max.) (nC) 38 • Dynamic dV/dt Rating Qgs (nC) 4.7 • Low Thermal Resistance	Original	PDF	IRFIBF20G, SiHFIBF20G O-220 18-Jul-08 IRFIBF20G SiHFIBF20G-E3
Untitled Abstract: No abstract text available Text: IRFIBF20G_RC, SiHFIBF20G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter	Original	PDF	IRFIBF20G SiHFIBF20G AN609, 31-May-10
IRFIBF20G Abstract: No abstract text available Text: IRFIBF20G, SiHFIBF20G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS V 900 RDS(on) (Ω) VGS = 10 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 8.0 Qg (Max.) (nC) 38 • Dynamic dV/dt Rating Qgs (nC) 4.7 • Low Thermal Resistance	Original	PDF	IRFIBF20G, SiHFIBF20G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRFIBF20G
IRFIBF20G Abstract: SiHFIBF20G SiHFIBF20G-E3 Text: IRFIBF20G, SiHFIBF20G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS V 900 RDS(on) (Ω) VGS = 10 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 8.0 Qg (Max.) (nC) 38 • Dynamic dV/dt Rating Qgs (nC) 4.7 • Low Thermal Resistance	Original	PDF	IRFIBF20G, SiHFIBF20G O-220 18-Jul-08 IRFIBF20G SiHFIBF20G-E3
Untitled Abstract: No abstract text available Text: IRFIBF20G, SiHFIBF20G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS V 900 RDS(on) (Ω) VGS = 10 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 8.0 Qg (Max.) (nC) 38 • Dynamic dV/dt Rating Qgs (nC) 4.7 • Low Thermal Resistance	Original	PDF	IRFIBF20G, SiHFIBF20G O-220 12-Mar-07
Untitled Abstract: No abstract text available Text: IRFIBF20G, SiHFIBF20G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS V 900 RDS(on) (Ω) VGS = 10 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 8.0 Qg (Max.) (nC) 38 • Dynamic dV/dt Rating Qgs (nC) 4.7 • Low Thermal Resistance	Original	PDF	IRFIBF20G, SiHFIBF20G O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: IRFIBF20G, SiHFIBF20G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS V 900 RDS(on) (Ω) VGS = 10 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 8.0 Qg (Max.) (nC) 38 • Dynamic dV/dt Rating Qgs (nC) 4.7 • Low Thermal Resistance	Original	PDF	IRFIBF20G, SiHFIBF20G O-220 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12
Untitled Abstract: No abstract text available Text: IRFIBF20G, SiHFIBF20G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS V 900 RDS(on) (Ω) VGS = 10 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 8.0 Qg (Max.) (nC) 38 • Dynamic dV/dt Rating Qgs (nC) 4.7 • Low Thermal Resistance	Original	PDF	IRFIBF20G, SiHFIBF20G O-220 11-Mar-11