SiHFIBF20G
Abstract: IRFIBF20G SiHFIBF20G-E3
Text: IRFIBF20G, SiHFIBF20G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS V 900 RDS(on) (Ω) VGS = 10 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 8.0 Qg (Max.) (nC) 38 • Dynamic dV/dt Rating Qgs (nC) 4.7 • Low Thermal Resistance
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IRFIBF20G,
SiHFIBF20G
O-220
18-Jul-08
IRFIBF20G
SiHFIBF20G-E3
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Untitled
Abstract: No abstract text available
Text: IRFIBF20G_RC, SiHFIBF20G_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter
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IRFIBF20G
SiHFIBF20G
AN609,
31-May-10
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IRFIBF20G
Abstract: No abstract text available
Text: IRFIBF20G, SiHFIBF20G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS V 900 RDS(on) (Ω) VGS = 10 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 8.0 Qg (Max.) (nC) 38 • Dynamic dV/dt Rating Qgs (nC) 4.7 • Low Thermal Resistance
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Original
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IRFIBF20G,
SiHFIBF20G
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRFIBF20G
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IRFIBF20G
Abstract: SiHFIBF20G SiHFIBF20G-E3
Text: IRFIBF20G, SiHFIBF20G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS V 900 RDS(on) (Ω) VGS = 10 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 8.0 Qg (Max.) (nC) 38 • Dynamic dV/dt Rating Qgs (nC) 4.7 • Low Thermal Resistance
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Original
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PDF
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IRFIBF20G,
SiHFIBF20G
O-220
18-Jul-08
IRFIBF20G
SiHFIBF20G-E3
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Untitled
Abstract: No abstract text available
Text: IRFIBF20G, SiHFIBF20G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS V 900 RDS(on) (Ω) VGS = 10 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 8.0 Qg (Max.) (nC) 38 • Dynamic dV/dt Rating Qgs (nC) 4.7 • Low Thermal Resistance
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Original
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PDF
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IRFIBF20G,
SiHFIBF20G
O-220
12-Mar-07
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Untitled
Abstract: No abstract text available
Text: IRFIBF20G, SiHFIBF20G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS V 900 RDS(on) (Ω) VGS = 10 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 8.0 Qg (Max.) (nC) 38 • Dynamic dV/dt Rating Qgs (nC) 4.7 • Low Thermal Resistance
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Original
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PDF
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IRFIBF20G,
SiHFIBF20G
O-220
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: IRFIBF20G, SiHFIBF20G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS V 900 RDS(on) (Ω) VGS = 10 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 8.0 Qg (Max.) (nC) 38 • Dynamic dV/dt Rating Qgs (nC) 4.7 • Low Thermal Resistance
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Original
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PDF
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IRFIBF20G,
SiHFIBF20G
O-220
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: IRFIBF20G, SiHFIBF20G Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Isolated Package VDS V 900 RDS(on) (Ω) VGS = 10 V • High Voltage Isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) 8.0 Qg (Max.) (nC) 38 • Dynamic dV/dt Rating Qgs (nC) 4.7 • Low Thermal Resistance
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Original
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IRFIBF20G,
SiHFIBF20G
O-220
11-Mar-11
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